MMBTA43
NPN High Voltage Amplifier
1. BASE
2. EMITTER
3. COLLECTOR
A
SOT-23
Dim
Min
2.70
1.10
Max
3.10
1.50
E
FEATURES
Epitaxial planar die construction.
Ideal for medium power amplification
and switching.
K
B
A
B
C
D
E
G
H
J
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
D
G
H
J
0.1 Typical
APPLICATIONS
As a video output to driver color CRT and other high
Voltage application.
C
K
All Dimensions in mm
ORDERING INFORMATION
Type No.
MMBTA43
Marking
ABX
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
,T
stg
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
Value
200
200
6
0.2
0.35
-55 to +150
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
f
T
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
Collector output capacitance
transition frequency
Test
conditions
MIN.
200
200
6
-
-
25
40
50
-
-
MAX.
-
-
-
0.1
0.1
-
-
200
0.4
0.9
4.0
50
-
V
V
pF
MHz
UNIT
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=1.0mA,I
B
=0
I
E
=100μA,I
C
=0
I
E
= 0; V
CB
= 160V
I
C
= 0; V
EB
= 4V
V
CE
=10V; I
C
=1mA
V
CE
=10V;I
C
=10mA
V
CE
=10V;I
C
=30mA
I
C
=20mA; I
B
=2mA
I
C
=20mA; I
B
=2mA
V
CB
=20V,I
E
=0;f=1.0MHz
I
C
=10mA; V
CE
=20V
f=100MHz
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
MMBTA43
NPN High Voltage Amplifier
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Device
MMBTA43
Package
SOT-23
Shipping
3000/Tape&Reel
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
