FHX35X/002
FHX35LG/002
Low Noise HEMT
DESCRIPTION
The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT
(High Electron Mobility Transistor) ones suitable for use as the front end
of an optical receiver in high speed lightwave communication systems.
This HEMT combines high transconductance, low gate capacitance and
low leakage current; all important factors in achieving low noise
preamplification. Fujitsu’s stringent Quality Assurance criteria and
detailed Test Procedures assure Highest Reliabiltity Performance.
FEATURES
•
•
•
•
•
High Transconductance
Low Leakage Current
Low Gate Capacitance
Gold Bonding System
Proven Reliability
LG PACKAGE
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Thermal Resistance
Symbol
VDS
VGS
PT
Tstg
Tch
Rth
Channel to Case
Conditions
Ratings
6
-5
290
-65 to 175
+175
150
Unit
V
V
mW
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Leakage Current
Gate-Source Capacitance
Gate-Drain Capacitance
Symbol
IDSS
gm
Vp
IGSO
CGS
CGD
Conditions
VDS=2V, VGS=0V
VDS=2V, IDS=10mA
VDS=2V, IDS=1mA
VGS=-2V
VDS=3V
IDS=10mA
FHX35X/002
FHX35LG/002
Min.
15
45
-0.2
-
-
-
-
Limits
Min.
40
60
-1.0
10
0.27
0.47
0.035
Max.
85
-
-2.0
20
-
-
-
pF
Unit
mA
mS
V
nA
pF
VDS=3V, IDS=10mA
Edition 1.1
May 1998
1
FHX35X/002
FHX35LG/002
Low Noise HEMT
Fig. 1 Drain Current vs. Drain-Source Voltage
Fig. 2 Gate-Source Capacitance
vs. Drain-Source Current
VDS=3V
40
Drain Current (mA)
Gate-Source Capacitance (pF)
VGS=0V
-0.2V
0.5
FHX35LG/002
0.4
30
-0.4V
20
-0.6V
10
-0.8V
0
-1.0V
1
2
3
0.3
FHX35X/002
0.2
10
20
30
Drain-source Voltage (V)
Drain-Source Current (mA)
Fig. 3 Transconductance vs.
Gate-Source Voltage
Gate-Source Leakage Current (mA)
Fig. 4 Gate-Source Leakage Current
vs. Gate-Source Voltage
VDS=2V
Transconductance (mS)
80
50
60
20
10
5
40
20
0
-0.2
-0.4
-0.6
-0.8
0
-1.0
-2.0
-3.0
Gate-Source Voltage (V)
Gate-Source Voltage (V)
2
FHX35X/002
FHX35LG/002
Low Noise HEMT
BONDING PROCEDURE FOR FET CHIPs
Caution must be excercised to prevent static build up by proper grounding of all equipment and per-
sonnel. All operations must be performed in a clean, dust-free and dry environment.
1. Storage Condition: Store in a clean, dry nitrogen environment.
2. Die-Attach
2.1 The die-attach station must have an accurate temperature control, and an inert
forming gas should be used.
2.2 Chips should be kept at room temperature, except during die-attach.
2.3 Place package or carrier on the heated stage.
2.4 Place the solder at the position where the chip will be bonded.
2.5 Lightly grasp the chip edges using tweezers and scrub the die onto the Au-Sn
solder preform. The die attach conditions are: 300 to 310° for 30 to 60 seconds. The Au-Sn
(80-20) solder preform volume should be about 3.2x10-3 mm3 for FHX35X/002.
3. Wire Bonding
3.1 Bonding Condition
The bonder must be properly grounded. Wire bonding should be performed with a
thermal compression bonder using 0.7 to 1.0 mil diameter, half hard, 3-8%
elongation gold wire.
3.2 Wire Layout
The wire bonding should be performed as shown in the following example.
Wire Layout
FHX35X/002
3
FHX35X/002
FHX35LG/002
Low Noise HEMT
Case Style "LG"
Metal-Ceramic Package
2 MIN.
(0.079)
2 MIN.
(0.079)
1.78±0.15
(0.07)
1.0
(0.039)
3
0.5
(0.02)
1.78±0.15
(0.07)
1.3 Max
(0.051)
Gold Plated Leads
1: Gate
2: Source
3: Drain
4: Source
Unit: mm (Inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
0.1
(0.004)
2 MIN.
(0.079)
4
2
2 MIN.
(0.079)
1
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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