IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
Applications
l
High Efficiency Synchronous Rectification
in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
l
RoHS Compliant, Halogen-Free
HEXFET
®
Power MOSFET
D
G
S
D
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
D
60V
2.4m
:
3.0m
:
210A
120A
c
G
D
S
G
D
S
G
D
S
TO-220AB
IRFB3206PbF
G
D
2
Pak
IRFS3206PbF
D
TO-262
IRFSL3206PbF
S
Gate
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
50
800
800
Drain
Source
Base Part Number
IRFB3206PbF
IRFSL3206PbF
IRFS3206PbF
Package Type
TO-220
TO-262
D2Pak
Orderable Part Number
IRFB3206PbF
IRFSL3206PbF
IRFS3206PbF
IRFS3206TRLPbF
IRFS3206TRRPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Max.
210
150
d
120
840
300
2.0
Units
A
W
W/°C
V
V/ns
f
± 20
5.0
-55 to + 175
300
10lb in (1.1N m)
170
See Fig. 14, 15, 22a, 22b,
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
°C
x
x
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ãd
e
mJ
A
mJ
g
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
R
θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
2
Pak
k
Typ.
–––
Max.
0.50
–––
62
40
Units
°C/W
k
0.50
–––
–––
jk
1
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
60
–––
–––
2.0
–––
–––
–––
–––
–––
–––
0.07
2.4
–––
–––
–––
–––
–––
0.7
–––
–––
3.0
4.0
20
250
100
-100
–––
Ω
nA
V
Conditions
V
GS
= 0V, I
D
= 250μA
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 75A
V
μA
V
DS
=60V, V
GS
= 0V
V
DS
= V
GS
, I
D
= 150μA
g
d
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
210
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
29
35
85
19
82
55
83
6540
720
360
1040
1230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
–––
170
–––
S
nC
I
D
= 75A
V
DS
=30V
V
GS
= 10V
V
DD
= 30V
I
D
= 75A
R
G
=2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A, V
DS
=0V, V
GS
= 10V
g
g
i
, See Fig.11
= 0V to 48V
hÃ
Conditions
D
ƒ = 1.0MHz, See Fig.5
V
GS
= 0V, V
DS
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) –––
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
–––
h
V
GS
= 0V, V
DS
= 0V to 48V
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
––– 210
–––
–––
33
37
41
53
2.1
A
A
V
ns
nC
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 51V,
G
Ãd
840
1.3
50
56
62
80
–––
S
g
g
I
F
= 75A
di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.023mH
R
G
= 25Ω, I
AS
= 120A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
75A, di/dt
≤
360A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
2
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
100
4.5V
4.5V
10
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
10
10
100
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 75A
VGS = 10V
2.0
TJ = 175°C
10
1.5
TJ = 25°C
1
1.0
VDS = 25V
≤
60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
VDS = 48V
VDS= 30V
VDS= 12V
10000
16
C, Capacitance (pF)
Ciss
12
6000
8
4000
4
2000
Coss
Crss
0
1
10
100
0
0
40
80
120
160
200
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
www.irf.com
©
2014 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
TJ = 175°C
1000
1msec
100μsec
100
10
TJ = 25°C
10
10msec
1
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
0.1
100
VDS, Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
240
200
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
80
Limited By Package
ID = 5mA
75
160
120
80
40
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
70
65
60
55
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.0
Fig 10.
Drain-to-Source Breakdown Voltage
800
EAS, Single Pulse Avalanche Energy (mJ)
1.5
600
I D
TOP
21A
33A
BOTTOM
120A
Energy (μJ)
1.0
400
0.5
200
0.0
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
www.irf.com
©
2014 International Rectifier
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
Submit Datasheet Feedback
April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
1
τ
2
τ
3
τ
3
τ
0.01
Ri (°C/W)
τ
J
τι
(sec)
Ci=
τi/Ri
Ci=
τi/Ri
0.106416 0.0001
0.201878 0.001262
0.190923 0.011922
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
0.05
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 150°C and
Tstart =25°C (Single Pulse)
10
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current vs.Pulsewidth
200
EAR , Avalanche Energy (mJ)
160
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 120A
120
80
40
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
ΔT
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
175
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
April 24, 2014
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
