StrongIRFET™
IRFR7746PbF
IRFU7746PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
G
S
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
I
D (Package Limited)
75V
9.5m
11.2m
59A
56A
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
S
G
D-Pak
IRFR7746PbF
S
D
G
I-Pak
IRFU7746PbF
D
Drain
S
Source
Base part number
IRFR7746PbF
IRFU7746PbF
Package Type
D-Pak
I-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tube
75
Orderable Part Number
IRFR7746PbF
IRFR7746TRPbF
IRFU7746PbF
)
RDS(on), Drain-to -Source On Resistance (m
30
ID = 35A
25
60
Limited by package
50
ID, Drain Current (A)
20
40
30
20
10
TJ = 125°C
15
TJ = 25°C
10
5
2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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Fig 2.
Maximum Drain Current vs. Case Temperature
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November 7, 2014
Absolute Maximum Rating
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient (PCB Mount)
R
JA
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Notes:
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
IRFR/U7746PbF
Max.
59
42
56
230*
99
0.66
± 20
-55 to + 175
300
116
160
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
–––
Max.
1.52
50
110
mJ
A
mJ
Units
°C/W
Units
A
W
W/°C
V
°C
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
53
––– mV/°C Reference to 25°C, I
D
= 1mA
9.5 11.2
V
GS
= 10V, I
D
= 35A
m
11.2 –––
V
GS
= 6.0V, I
D
= 18A
–––
3.7
V
V
DS
= V
GS
, I
D
= 100µA
–––
1.0
V
DS
=75 V, V
GS
= 0V
µA
––– 150
V
DS
=75V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
1.6
–––
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 190
µ
H, R
G
= 50, I
AS
= 35A, V
GS
=10V.
I
SD
35A, di/dt
570A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When
mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 18A, V
GS
=10V
*
Pulse drain current is limited at 224A by source bonding technology.
2
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November 7, 2014
IRFR/U7746PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
112
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
59
14
18
41
7.9
30
34
21
3107
257
159
234
299
Typ.
–––
–––
–––
8.1
27
32
26
36
1.7
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=35A
89
I
D
= 35A
–––
V
DS
= 38V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 38V
–––
I
D
= 35A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
59
A
230*
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 60V
V
GS
= 0V, VDS = 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 35A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 35A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 35A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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November 7, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFR/U7746PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
100
BOTTOM
4.5V
10
10
4.5V
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
60µs
PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.5
ID = 35A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
10
TJ = 175°C
TJ = 25°C
1.5
1
VDS = 25V
0.1
2
3
4
5
6
7
60µs
PULSE WIDTH
1.0
0.5
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
ID = 35A
VDS = 60V
VDS = 38V
VDS= 15V
10000
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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November 7, 2014
1000
100
IRFR/U7746PbF
100µsec
ISD, Reverse Drain Current (A)
100
TJ = 175°C
10
ID, Drain-to-Source Current (A)
10
Limited by Package
1msec
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
TJ = 25°C
1
10msec
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.01
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
94
92
90
Id = 1.0mA
Fig 10.
Maximum Safe Operating Area
0.6
0.5
0.4
86
84
82
80
78
76
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
Energy (µJ)
88
0.3
0.2
0.1
0.0
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0
50
100
150
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
Fig 12.
Typical C
oss
Stored Energy
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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November 7, 2014
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