PD -
97784
IRFR4510PbF
IRFU4510PbF
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
G
S
HEXFET
®
Power MOSFET
V
DSS
100V
11.1m
R
DS(on)
typ.
max.
13.9m
I
D (Silicon Limited)
63A
I
D (Package Limited)
56A
D
D
S
G
G
D
S
DPak
IRFR4510PbF
G
D
IPAK
IRFU4510PbF
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Max.
63
45
56
252
143
0.95
± 20
-55 to + 175
300
Units
A
c
W
W/°C
V
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
c
d
c
127
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
j
Parameter
Typ.
Max.
1.05
50
110
Units
°C/W
i
–––
–––
–––
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
Notes
through
are on page 11
1
05/02/12
IRFR/U4510PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
Typ.
–––
0.10
11.1
3.0
–––
–––
–––
–––
0.61
Max.
–––
–––
13.9
4.0
20
250
100
-100
–––
Units
V
V/°C
m
V
μA
nA
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 38A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
f
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
62
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
54
14
15
39
18
42
42
34
3031
213
104
255
478
Max.
–––
81
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
nC
Conditions
V
DS
= 25V, I
D
= 38A
I
D
= 38A
V
DS
= 50V
V
GS
= 10V
I
D
= 38A, V
DS
=0V, V
GS
= 10V
V
DD
= 65V
I
D
= 38A
R
G
= 7.5
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
f
f
ns
pF
h
g
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Min.
–––
Typ.
–––
Max.
56
Units
Conditions
D
Ã
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
MOSFET symbol
showing the
A
G
integral reverse
–––
–––
252
p-n junction diode.
–––
–––
1.3
V
T
J
= 25°C, I
S
= 38A, V
GS
= 0V
–––
7.0
–––
V/ns T
J
= 175°C, I
S
= 38A, V
DS
= 100V
–––
34
–––
T
J
= 25°C
V
R
= 86V
ns
–––
39
–––
T
J
= 125°C
I
F
= 38A
di/dt = 100A/μs
–––
47
–––
T
J
= 25°C
nC
–––
61
–––
T
J
= 125°C
–––
2.4
–––
A
T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
S
e
f
2
www.irf.com
IRFR/U4510PbF
1000
TOP
VGS
15V
10V
6.0V
5.5V
5.0V
4.75V
4.5V
4.25V
1000
TOP
VGS
15V
10V
6.0V
5.5V
5.0V
4.75V
4.5V
4.25V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
4.25V
1
4.25V
0.1
0.1
1
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 175°C
1
10
100
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
2.2
1.8
1.4
1.0
0.6
0.2
ID = 38A
VGS = 10V
100
T J = 175°C
T J = 25°C
10
VDS = 25V
60μs PULSE WIDTH
1.0
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 38A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS= 80V
VDS= 50V
VDS= 20V
Ciss
1000
Coss
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
70
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFR/U4510PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
100μsec
100
T J = 175°C
10
Limited by
package
10
T J = 25°C
1
10msec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
VGS = 0V
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
0.01
10
100
1000
Fig 7.
Typical Source-Drain Diode
Forward Voltage
70
60
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
VDS, Drain-to-Source Voltage (V)
125
Id = 5mA
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Limited by package
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
1.6
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
600
500
400
300
200
100
0
ID
TOP
4.7A
12A
BOTTOM 38A
1.4
1.2
Energy (μJ)
1.0
0.8
0.6
0.4
0.2
0.0
-20
0
20
40
60
80
100
120
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
4
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IRFR/U4510PbF
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
J
J
1
1
R
1
R
1
2
R
2
R
2
R
3
R
3
3
C
3
2
Ri (°C/W)
i
(sec)
0.3442 0.001031
0.0679 0.000061
0.6371
0.005883
Ci=
iRi
Ci iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
150
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 38A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
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EAR , Avalanche Energy (mJ)
5
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