PD - 95513D
Features
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IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Multiple Package Options
Lead-Free
V
DSS
= 100V
R
DS(on)
= 18mΩ
G
S
Description
I
D
= 42A
This HEXFET
®
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
D-Pak
I-Pak
IRFR3710ZPbF IRFU3710ZPbF
I-Pak Leadform 701
IRFU3710Z-701PbF
Refer to page 11 for package outline
Max.
56
39
42
220
140
0.95
± 20
150
200
See Fig.12a, 12b, 15, 16
-55 to + 175
°C
300 (1.6mm from case )
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
A
d
Ã
h
W
W/°C
V
mJ
A
mJ
g
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
Max.
1.05
50
110
Units
°C/W
i
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
09/27/10
IRFR/U3710ZPbF & IRFU3710Z-701PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
100
–––
–––
2.0
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.088
15
–––
–––
–––
–––
–––
–––
69
15
25
14
43
53
42
4.5
7.5
2930
290
180
1200
180
430
–––
–––
18
4.0
–––
20
250
200
-200
100
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 33A
V
S
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 33A
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 33A
V
DS
= 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 33A
R
G
= 6.8
Ω
V
GS
= 10V
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
35
41
56
A
220
1.3
53
62
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 33A, V
GS
= 0V
T
J
= 25°C, I
F
= 33A, V
DD
= 50V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3710ZPbF & IRFU3710Z-701PbF
1000
TOP
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
1000
TOP
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.0V
10
10
4.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
1
60µs PULSE WIDTH
Tj = 175°C
0.1
1
10
100
1
0.1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
100
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
T J = 175°C
100
80
T J = 25°C
60
T J = 175°C
40
10
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate-to-Source Voltage (V)
20
V DS = 10V
0
0
10
20
30
40
50
60
70
80
ID,Drain-to-Source Current (A)
1.0
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRFR/U3710ZPbF & IRFU3710Z-701PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
ID= 33A
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 80V
VDS= 50V
VDS= 20V
10000
C, Capacitance(pF)
Ciss
1000
Coss
Crss
100
10
1
10
100
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10.00
10
100µsec
1.00
T J = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
0.10
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
1.8
100
1000
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U3710ZPbF & IRFU3710Z-701PbF
60
50
ID, Drain Current (A)
3.0
Limited By Package
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 56A
VGS = 10V
2.5
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
2.0
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.01
τ
1
τ
2
Ri (°C/W)
τi
(sec)
0.576
0.000540
0.249
0.001424
0.224
0.007998
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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