NSS35200MR6T1G
35 V, 5 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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35 VOLTS
5.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
100 mW
6
5
4
3
1
2
TSOP−6
CASE 318G
STYLE 6
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−35
−55
−5.0
−2.0
−5.0
Unit
Vdc
Vdc
Vdc
Adc
A
MARKING DIAGRAM
VS8 M
G
G
HBM Class 3
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
VS8 = Device Code
M = Date Code*
G
= Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NSS35200MR6T1G
SNSS35200MR6T1G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TSOP−6
(Pb−Free)
TSOP−6
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 5
1
Publication Order Number:
NSS35200MR6/D
NSS35200MR6T1G
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 100
0.25
I
C
/I
B
= 50
0.20
100°C
0.15
25°C
0.10
0.05
0
−55°C
0.1
T
A
=
−55°C
T
A
= 150°C
T
A
= 25°C
0.01
0.1
1
0.01
0.001
10
0.001
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
1000
T
A
= 150°C
h
FE
, DC CURRENT GAIN
T
A
= 25°C
V
CE
= 1.5 V
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
I
C
/I
B
= 100
0.01
0.1
1
10
T
A
= 150°C
T
A
= 25°C
T
A
=
−55°C
100
T
A
=
−55°C
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
V
BE(ON)
, BASE−EMITTER ON VOLTAGE (V)
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
V
CE
= 3 V
C, CAPACITANCE (pF)
1000
C
ibo
T
A
=
−55°C
C
obo
100
T
A
= 25°C
T
A
= 150°C
0.01
0.1
1
10
10
0.1
1
10
0.2
0.001
I
C
, COLLECTOR CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 5. Base Emitter Turn−On Voltage
versus Collector Current
Figure 6. Capacitance
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