NSS30201MR6T1G,
SNSS30201MR6T1G
30 V, 3 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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30 VOLTS
3.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
100 mW
TSOP−6
CASE 318G
STYLE 6
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are Pb−Free Devices*
DEVICE MARKING
VS7 M
G
G
VS7 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSS30201MR6T1G
SNSS30201MR6T1G
Package
TSOP−6
(Pb−Free)
TSOP−6
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 1
1
Publication Order Number:
NSS30201MR6/D
NSS30201MR6T1G, SNSS30201MR6T1G
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
30
50
5.0
2.0
3.0
Unit
V
V
V
A
A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 s)
Junction and Storage Temperature Range
Symbol
P
D
(Note 1)
Max
535
4.3
234
1.180
9.4
106
110
50
1.75
−55
to +150
Unit
mW
mW/C
C/W
R
qJA
(Note 1)
P
D
(Note 2)
W
mW/C
C/W
C/W
C/W
W
C
R
qJA
(Note 2)
R
qJL
(Note 1)
R
qJL
(Note 2)
P
Dsingle
(Notes 2 and 3)
T
J
, T
stg
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. FR−4 with 1 oz and 3.9 mm
2
of copper area.
2. FR−4 with 1 oz and 645 mm
2
of copper area.
3. Refer to Figure 8.
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2
NSS30201MR6T1G, SNSS30201MR6T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mA, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 0.1 mA, I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 0.1 mA, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CES
= 30 V)
Emitter Cutoff Current
(V
EB
= 4.0 V)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 1.0 mA, V
CE
= 5.0 V)
(I
C
= 0.5 A, V
CE
= 5.0 V)
(I
C
= 1.0 A, V
CE
= 5.0 V)
Collector
−Emitter
Saturation Voltage (Note 4)
(I
C
= 1.0 A, I
B
= 100 mA)
(I
C
= 0.5 A, I
B
= 50 mA)
(I
C
= 0.1 A, I
B
= 1.0 mA)
Base
−Emitter
Saturation Voltage (Note 4)
(I
C
= 1.0 A, I
B
= 0.1 A)
Base
−Emitter
Turn−on Voltage (Note 4)
(I
C
= 1.0 A, V
CE
= 2.0 V)
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz
Output Capacitance (f = 1.0 MHz)
4. Pulsed Condition: Pulse Width
300
msec,
Duty Cycle
2%.
h
FE
300
300
200
−
−
−
−
−
200
−
−
500
−
0.10
0.06
0.05
−
−
300
−
−
900
−
0.200
0.125
0.075
1.1
1.1
−
15
V
MHz
pF
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
30
50
5.0
−
−
−
−
−
−
−
−
−
−
−
0.1
0.1
0.1
V
V
V
mA
mA
mA
Symbol
Min
Typ
Max
Unit
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
V
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3
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