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NSS20300MR6T1G_09

产品描述20 V, 5 A, Low VCE(sat) PNP Transistor
文件大小121KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS20300MR6T1G_09概述

20 V, 5 A, Low VCE(sat) PNP Transistor

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NSS20300MR6T1G
20 V, 5 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−20
−30
−6.0
−3.0
−5.0
Unit
Vdc
Vdc
Vdc
Adc
A
1
TSOP−6
CASE 318G
STYLE 6
http://onsemi.com
20 VOLTS
5.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
78 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
Max
545
4.3
230
1.06
8.5
R
qJA
(Note 2)
R
qJL
(Note 1)
R
qJL
(Note 2)
P
Dsingle
(Note 2)
T
J
, T
stg
118
48
40
1.75
−55
to
+150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
°C/W
W
°C
DEVICE MARKING
VS1 MG
G
VS1 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 2 oz copper traces.
2. FR−4 @ 500 mm
2
, 2 oz copper traces.
NSS20300MR6T1G TSOP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
April, 2009
Rev. 2
1
Publication Order Number:
NSS20300MR6/D
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