PD - 95603B
IRG4IBC10UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
l
UltraFast Co-Pack IGBT
C
l
l
l
l
UltraFast: Optimized for high operating up to
80 kHz in hard switching, >200 kHz in
resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFRED
®
ultrafast, ultra-
soft recovery anti-parallel diodes for use in bridge
configurations
Industry standard TO-220 Full-Pak
Lead-Free
V
CES
= 600V
V
CE(on) typ.
=
2.15V
G
E
@V
GE
=15V, I
C
=5.0A
n-channel
t
f (typ.)
= 140ns
Benefits
l
l
l
Generation 4 IGBTs offer highest efficiencies available
IGBTs optimized for specifica application conditions
HEXFRED
®
diodes optimized for performace with IGBTs
Minimized recovery characteristics require less/no
snubbing
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@Tc = 100°C
I
FM
V
ISOL
V
GE
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Pulsed Collector Current
Clamped Inductive Load Current
Max.
600
6.8
3.9
27
27
3.9
27
2500
±20
25
10
-55 to + 150
Units
V
A
c
Diode Continuous Forward Current
Diode Maximum Forward Current
rms Isolated Voltage, Terminal to case, t=1min
Gate-to-Emitter Voltage
Power Dissipation
Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
d
d
V
W
°C
300 (0.063 in.) (1.6mm from case)
10lb in (1.1N m)
x
x
N
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.1 (0.075)
Max.
5.0
9.0
65
–––
Units
°C/W
g (oz)
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01/28/2011
1
IRG4IB10UDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
∆V
(BR)CES
/∆T
J
Breakdown Voltage Temp. Coefficient
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
V
(BR)CES
e
Min.
600
–––
–––
–––
–––
3.0
Typ. Max. Units
–––
0.54
2.15
2.61
2.30
–––
-8.7
4.2
–––
–––
1.5
1.4
–––
–––
15
2.6
5.8
40
16
87
140
0.14
0.12
0.26
38
18
95
250
0.45
7.5
270
21
3.5
28
38
2.9
3.7
40
70
280
235
–––
–––
2.6
–––
–––
6.0
–––
–––
250
1000
1.8
1.7
100
-100
22
4.0
8.7
–––
–––
130
210
–––
–––
0.33
–––
–––
–––
–––
–––
–––
–––
–––
–––
42
57
5.2
6.7
60
105
–––
–––
mJ
nH
pF
ns
A
mJ
ns
nC
Conditions
V V
GE
= 0V, I
CE
= 250µA
V/°C V
GE
= 0V, I
CE
= 1.0mA
V
GE
= 15V, I
CE
= 5.0A
V
V
V
GE
= 15V, I
CE
= 8.5A
V
GE
= 15V, I
CE
= 5.0A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 250µA
g
–––
2.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
mV/°C
S V
CE
= 100V, I
CE
= 5.0A
µA V
CE
= 600V, V
GE
= 0V
V
nA
V
CE
= 600V, V
GE
= 0V, T
J
= 150°C
I
C
= 4.0A
I
C
= 4.0A, T
J
= 125°C
V
GE
= 20V
V
GE
= -20V
V
CE
= 400V
I
C
= 5.0A
V
GE
= 15V, See Fig. 8
I
C
= 5.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100Ω
T
J
= 25°C
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
I
C
= 5.0A, V
CC
= 480V See Fig. 11, 18
V
GE
= 15V, R
G
= 100Ω
T
J
= 150°C
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CE
= 30V
ƒ = 1.0MHz, See Fig. 7
T
J
=25°C, See Fig. I
F
=4.0A, V
R
=200V
T
J
=125°C
14
di/dt=200A/µs
I
F
=4.0A, V
R
=200V
di/dt=200A/µs
I
F
=4.0A, V
R
=200V
di/dt=200A/µs
I
F
=4.0A, V
R
=200V
di/dt=200A/µs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
(on)
E
(off)
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
ns
T
J
=25°C, See Fig.
T
J
=125°C
15
nC T
J
=25°C, See Fig.
T
J
=125°C
16
A/µs T
J
=25°C, See Fig.
T
J
=125°C
17
Details of note
through
are on the last page
2
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IRG4IBC10UDPbF
7
6
LOAD CURRENT (A)
5
4
3
2
1
0
0.1
1
10
100
f, Frequency (KHz)
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 1
- Typical Load Current vs. Frequency
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
10
T
J
= 150
o
C
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150
o
C
1
T
J
= 25
o
C
V
CC
= 50V
5µs PULSE WIDTH
5
6
7
8
9
10
11
12
13
14
0.1
V
GE
= 15V
20µs PULSE WIDTH
1
10
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4IB10UDPbF
10
5.0
8
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 10 A
Maximum DC Collector Current(A)
4.0
6
3.0
4
I
C
=
5A
2
2.0
I
C
= 2.5 A
0
25
50
75
100
125
150
T
C
, Case Temperature (
°
C)
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC10UDPbF
500
V
GE
, Gate-to-Emitter Voltage (V)
400
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 5.0A
16
C, Capacitance (pF)
300
Cies
12
200
8
100
Coes
Cres
4
0
0
1
10
100
0
4
8
12
16
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.30
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 5.0A
10
R
G
= Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
10
A
I
C
=
5
A
1
0.25
I
C
=
2.5
A
0.1
0.20
50
60
70
80
90
100
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance (Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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