PD - 95428A
IRG4BC40UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating
frequencies 8-40 KHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
Lead-Free
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.72V
@V
GE
= 15V, I
C
= 20A
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
40
20
160
160
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
------
Typ.
------
0.50
------
2 (0.07)
Max.
0.77
------
80
------
Units
°C/W
g (oz)
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1
02/18/10
IRG4BC40UPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Min.
600
18
----
----
----
----
V
GE(th)
Gate Threshold Voltage
3.0
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
11
----
I
CES
Zero Gate Voltage Collector Current
----
----
I
GES
Gate-to-Emitter Leakage Current
----
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)ECS
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Typ.
----
----
0.63
1.72
2.15
1.7
----
-13
18
----
----
----
----
Max. Units
Conditions
----
V
V
GE
= 0V, I
C
= 250µA
----
V
V
GE
= 0V, I
C
= 1.0A
See Fig. 2, 5
---- V/°C V
GE
= 0V, I
C
= 1.0mA
2.1
I
C
= 20A
V
GE
= 15V
----
V
I
C
= 40A
----
I
C
= 20A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
---- mV/°C V
CE
= V
GE
, I
C
= 250µA
----
S
V
CE
= 100V, I
C
= 20A
250
V
GE
= 0V, V
CE
= 600V
2.0
µA
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 n A
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ.
100
16
40
34
19
110
120
0.32
0.35
0.67
30
19
220
160
1.4
7.5
2100
140
34
Max. Units
Conditions
150
I
C
= 20A
25
nC V
CC
= 400V
See Fig. 8
60
V
GE
= 15V
----
T
J
= 25°C
----
ns
I
C
= 20A, V
CC
= 480V
175
V
GE
= 15V, R
G
= 10Ω
180
Energy losses include "tail"
----
----
mJ
See Fig. 10, 11, 13, 14
1.0
----
T
J
= 150°C,
----
ns
I
C
= 20A, V
CC
= 480V
----
V
GE
= 15V, R
G
= 10Ω
----
Energy losses include "tail"
----
mJ
See Fig. 13, 14
----
nH Measured 5mm from package
----
V
GE
= 0V
----
pF
V
CC
= 30V
See Fig. 7
----
= 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
(see fig. 13a)
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 10Ω,
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40UPbF
60
For both:
50
Triangular wave:
I
Duty cycle: 50%
T J = 125°C
T sink = 90°C
Gate drive as specified
Power Dissipation = 28W
Load Current ( A )
40
Square wave:
30
60% of rated
voltage
I
Clamp voltage:
80% of rated
20
10
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 1
- Typical Load Current vs. Frequency
1000
1000
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 25°C
T
J
= 150°C
100
T
J
= 150°C
10
10
T
J
= 25°C
1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
1
4
6
8
V
CC
= 10V
5µs PULSE WIDTH
A
10
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
T
C
= 25°C
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Fig. 3
- Typical Transfer Characteristics
3
IRG4BC40UPbF
40
V
GE
= 15V
2.5
V
CE
, Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 40A
30
2.0
20
I
C
= 20A
1.5
10
I
C
= 10A
0
25
50
75
100
125
A
150
1.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t2
Notes:
1. Duty factor D = t / t
1 2
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40UPbF
4000
20
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
3000
C
ies
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
V
CE
= 400V
I
C
= 20A
16
12
2000
C
oes
C
res
8
1000
4
0
1
10
A
100
0
0
20
40
60
80
100
A
120
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.1
Total Switching Losses (mJ)
1.0
Total Switching Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25°C
= 20A
10
R
G
= 10
Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 40A
0.9
I
C
= 20A
1
0.8
I
C
= 10A
0.7
0.6
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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