StrongIRFET™
IRFB7540PbF
IRFS7540PbF
IRFSL7540PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
60V
4.2m
5.1m
110A
G
S
max
I
D
D
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
S
D
G
TO-220AB
IRFB7540PbF
S
G
D2Pak
IRFS7540PbF
G
S
D
TO-262
IRFSL7540PbF
G
Gate
D
Drain
S
Source
Base part number
IRFB7540PbF
IRFSL7540PbF
IRFS7540PbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7540PbF
IRFSL7540PbF
IRFS7540PbF
IRFS7540TRLPbF
RDS(on), Drain-to -Source On Resistance (m
)
14
ID = 65A
12
ID, Drain Current (A)
120
100
80
60
40
20
10
8
6
4
T J = 25°C
2
4
6
8
10
12
14
16
18
20
T J = 125°C
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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© 2014 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
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November 6, 2014
Absolute Maximum Rating
IRFB/S/SL7540PbF
Units
A
W
W/°C
V
°C
Parameter
Max.
Continuous Drain Current, V
GS
@ 10V
110
Continuous Drain Current, V
GS
@ 10V
80
Pulsed Drain Current
430
Maximum Power Dissipation
160
Linear Derating Factor
1.1
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
180
E
AS (Thermally limited)
Single Pulse Avalanche Energy
313
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
0.95
Case-to-Sink, Flat Greased Surface (TO-220)
R
CS
0.50
–––
Junction-to-Ambient (TO-220)
R
JA
–––
62
2
Junction-to-Ambient (PCB Mount) (D Pak)
R
JA
–––
40
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
mJ
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
48
––– mV/°C Reference to 25°C, I
D
= 1mA
4.2
5.1
m V
GS
= 10V, I
D
= 65A
5.4
–––
V
GS
= 6.0V, I
D
= 33A
–––
3.7
V V
DS
= V
GS
, I
D
= 100µA
–––
1.0
V
DS
= 60V, V
GS
= 0V
µA
––– 150
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.2
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 86µH, R
G
= 50, I
AS
= 65A, V
GS
=10V.
65A, di/dt
1130A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
I
SD
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 25A, V
GS
=10V.
2
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© 2014 International Rectifier
Submit Datasheet Feedback
November 6, 2014
IRFB/S/SL7540PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
88
22
28
60
12
76
58
56
4555
415
270
430
550
Typ.
–––
–––
–––
11
33
37
36
47
1.9
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 65A
130
I
D
= 65A
–––
V
DS
= 30V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 30V
–––
I
D
= 65A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
110
A
430
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 65A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 65A,V
DS
= 60V
T
J
= 25°C
V
DD
= 51V
ns
T
J
= 125°C
I
F
= 65A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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© 2014 International Rectifier
Submit Datasheet Feedback
November 6, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFB/S/SL7540PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
10
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.4
ID = 65A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
60µs PULSE WIDTH
2.0
1.6
1.2
0.8
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V GS, Gate-to-Source Voltage (V)
0.4
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID = 65A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 48V
V DS= 30V
V DS= 12V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
November 6, 2014
1000
IRFB/S/SL7540PbF
1msec
100µsec
100
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
TJ = 25°C
OPERATION
IN THIS
AREA
LIMITED BY
R DS(on)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10msec
DC
V GS = 0V
1.0
0.2
0.6
1.0
1.4
1.8
V SD, Source-to-Drain Voltage (V)
10
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.8
78
Id = 1.0mA
76
74
Energy (µJ)
0.7
0.6
0.5
0.4
0.3
0.2
72
70
68
66
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.1
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
14
12
10
8
6
4
2
0
40
80
120
160
200
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2014 International Rectifier
Submit Datasheet Feedback
November 6, 2014
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