a
FEATURES
High Speed
140 MHz Bandwidth (3 dB, G = +1)
120 MHz Bandwidth (3 dB, G = +2)
35 MHz Bandwidth (0.1 dB, G = +2)
2500 V/ s Slew Rate
25 ns Settling Time to 0.1% (For a 2 V Step)
65 ns Settling Time to 0.01% (For a 10 V Step)
Excellent Video Performance (R
L
=150 )
0.01% Differential Gain, 0.01 Differential Phase
Voltage Noise of 1.9 nV√Hz
Low Distortion: THD = –74 dB @ 10 MHz
Excellent DC Precision
3 mV max Input Offset Voltage
Flexible Operation
Specified for 5 V and 15 V Operation
2.3 V Output Swing into a 75 Load (V
S
= 5 V)
APPLICATIONS
Video Crosspoint Switchers, Multimedia Broadcast
Systems
HDTV Compatible Systems
Video Line Drivers, Distribution Amplifiers
ADC/DAC Buffers
DC Restoration Circuits
Medical—Ultrasound, PET, Gamma & Counter
Applications
PRODUCT DESCRIPTION
NC 1
–IN 2
+IN 3
–V
S
4
8 NC
7 +V
S
6 OUTPUT
High Performance
Video Op Amp
AD811
NC
NC
NC
NC
NC
CONNECTION DIAGRAMS
20-Pin LCC (E-20A) Package
8-Pin Plastic (N-8)
Cerdip (Q-8)
SOIC (SO-8) Packages
3 2 1 20 19
NC 4
NC 5
–IN 6
NC 7
+IN 8
9 10 11 12 13
–V
S
NC = NO CONNECT
NC
NC
NC
NC
18 NC
AD811
17 NC
16 +V
S
15 NC
14 OUTPUT
AD811
5 NC
NC = NO CONNECT
16-Pin SOIC (R-16) Package 20-Pin SOIC (R-20) Package
NC 1
NC 2
–IN
3
16 NC
15 NC
14 +V
S
13 NC
12 OUTPUT
11 NC
NC
1
20 NC
19 NC
18 NC
17 +V
S
16 NC
15 OUTPUT
14 NC
13 NC
NC 2
NC 3
–IN 4
NC
5
NC 4
+IN
NC
5
6
+IN 6
NC 7
–V
S
8
NC 9
NC 10
–V
S
7
NC 8
AD811
10 NC
9 NC
NC = NO CONNECT
AD811
12 NC
11 NC
NC = NO CONNECT
The AD811 is a wideband current-feedback operational ampli-
fier, optimized for broadcast quality video systems. The –3 dB
bandwidth of 120 MHz at a gain of +2 and differential gain and
phase of 0.01% and 0.01° (R
L
= 150
Ω)
make the AD811 an
excellent choice for all video systems. The AD811 is designed to
meet a stringent 0.1 dB gain flatness specification to a band-
width of 35 MHz (G = +2) in addition to the low differential
gain and phase errors. This performance is achieved whether
driving one or two back terminated 75
Ω
cables, with a low
power supply current of 16.5 mA. Furthermore, the AD811 is
specified over a power supply range of
±
4.5 V to
±
18 V.
0.10
0.09
0.20
The AD811 is also excellent for pulsed applications where tran-
sient response is critical. It can achieve a maximum slew rate of
greater than 2500 V/µs with a settling time of less than 25 ns to
0.1% on a 2 volt step and 65 ns to 0.01% on a 10 volt step.
The AD811 is ideal as an ADC or DAC buffer in data acquisi-
tion systems due to its low distortion up to 10 MHz and its
wide unity gain bandwidth. Because the AD811 is a current
feedback amplifier, this bandwidth can be maintained over a
wide range of gains. The AD811 also offers low voltage and
current noise of 1.9 nV/√Hz and 20 pA/√Hz, respectively, and
excellent dc accuracy for wide dynamic range applications.
12
G = +2
R
L
= 150Ω
R
G
= R
FB
V
S
=
±15V
DIFFERENTIAL GAIN – %
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
5
6
7
8
GAIN
PHASE
R
F
= 649Ω
F
C
= 3.58MHz
100 IRE
MODULATED RAMP
R
L
= 150Ω
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
DIFFERENTIAL PHASE – Degrees
9
6
GAIN – dB
3
V
S
=
±5V
0
–3
9 10
11
12
13
14
15
–6
1M
10M
FREQUENCY – Hz
100M
SUPPLY VOLTAGE –
±Volts
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
AD811–SPECIFICATIONS
(@ T = +25 C and V =
A
S
15 V dc, R
LOAD
= 150
Ω
unless otherwise noted)
AD811J/A
1
Min
Typ
Max
AD811S
2
Min
Typ
Max
Units
Model
DYNAMIC PERFORMANCE
Small Signal Bandwidth (No Peaking)
–3 dB
G = +1
G = +2
G = +2
G = +10
0.1 dB Flat
G = +2
Full Power Bandwidth
3
Slew Rate
Settling Time to 0.1%
Settling Time to 0.01%
Settling Time to 0.1%
Rise Time, Fall Time
Differential Gain
Differential Phase
THD @ f
C
= 10 MHz
Third Order Intercept
4
INPUT OFFSET VOLTAGE
Conditions
V
S
R
FB
= 562
Ω
R
FB
= 649
Ω
R
FB
= 562
Ω
R
FB
= 511
Ω
R
FB
= 562
Ω
R
FB
= 649
Ω
V
OUT
= 20 V p-p
V
OUT
= 4 V p-p
V
OUT
= 20 V p-p
10 V Step, A
V
= –1
2 V Step, A
V
= –1
R
FB
= 649, A
V
= +2
f = 3.58 MHz
f = 3.58 MHz
V
OUT
= 2 V p-p, A
V
= +2
@ f
C
= 10 MHz
±
15 V
±
15 V
±
5 V
±
15 V
±
5 V
±
15 V
±
15 V
±
5 V
±
15 V
±
15 V
±
5 V
±
15 V
±
15 V
±
15 V
±
15 V
±
5 V
±
15 V
±
5 V,
±
15 V
140
120
80
100
25
35
40
400
2500
50
65
25
3.5
0.01
0.01
–74
36
43
0.5
5
3
5
140
120
80
100
25
35
40
400
2500
50
65
25
3.5
0.01
0.01
–74
36
43
0.5
5
5
15
10
20
2
2
5
30
10
25
3
5
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/µs
V/µs
ns
ns
ns
ns
%
Degree
dBc
dBm
dBm
mV
mV
µV/°C
µA
µA
µA
µA
T
MIN
to T
MAX
Offset Voltage Drift
INPUT BIAS CURRENT
–Input
T
MIN
to T
MAX
+Input
T
MIN
to T
MAX
TRANSRESISTANCE
T
MIN
to T
MAX
V
OUT
=
±
10 V
R
L
=
∞
R
L
= 200
Ω
V
OUT
=
±
2.5 V
R
L
= 150
Ω
V
CM
=
±
2.5
V
CM
=
±
10 V
T
MIN
to T
MAX
V
S
=
±
4.5 V to
±
18 V
T
MIN
to T
MAX
T
MIN
to T
MAX
T
MIN
to T
MAX
f = 1 kHz
f = 1 kHz
±
5 V
±
15 V
T
J
= +25°C
(Open Loop @ 5 MHz)
±
15 V
±
15 V
±
5 V
±
5 V
±
15 V
±
5 V,
±
15 V
±
5 V,
±
15 V
2
2
0.75
0.5
0.25
1.5
0.75
0.4
0.75
0.5
1.5
0.75
MΩ
MΩ
MΩ
0.125 0.4
COMMON-MODE REJECTION
V
OS
(vs. Common Mode)
T
MIN
to T
MAX
T
MIN
to T
MAX
Input Current (vs. Common Mode)
POWER SUPPLY REJECTION
V
OS
+Input Current
–Input Current
INPUT VOLTAGE NOISE
INPUT CURRENT NOISE
OUTPUT CHARACTERISTICS
Voltage Swing, Useful Operating Range
5
Output Current
Short-Circuit Current
Output Resistance
INPUT CHARACTERISTICS
+Input Resistance
–Input Resistance
Input Capacitance
Common-Mode Voltage Range
POWER SUPPLY
Operating Range
Quiescent Current
TRANSISTOR COUNT
56
60
60
66
1
70
0.3
0.4
1.9
20
±
2.9
±
12
100
150
9
1.5
14
7.5
±
3
±
13
50
56
3
60
2
2
60
66
1
70
0.3
0.4
1.9
20
±
2.9
±
12
100
150
9
1.5
14
7.5
±
3
±
13
3
dB
dB
µA/V
dB
µA/V
µA/V
nV/√Hz
pA/√Hz
V
V
mA
mA
Ω
MΩ
Ω
pF
V
V
60
2
2
+Input
±
5 V
±
15 V
±
5 V
±
15 V
±
4.5
14.5
16.5
40
±
18
16.0
18.0
±
4.5
14.5
16.5
40
±
18
16.0
18.0
V
mA
mA
# of Transistors
NOTES
1
The AD811JR is specified with
±
5 V power supplies only, with operation up to
±
12 volts.
2
See Analog Devices’ military data sheet for 883B tested specifications.
3
FPBW = slew rate/(2
π
V
PEAK
).
4
Output power level, tested at a closed loop gain of two.
5
Useful operating range is defined as the output voltage at which linearity begins to degrade.
Specifications subject to change without notice.
–2–
REV. C
AD811
ABSOLUTE MAXIMUM RATINGS
1
MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .± 18 V
AD811JR Grade Only . . . . . . . . . . . . . . . . . . . . . . . .
±
12 V
Internal Power Dissipation
2
. . . . . . . . Observe Derating Curves
Output Short Circuit Duration . . . . . Observe Derating Curves
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .
±
6 V
Storage Temperature Range (Q, E) . . . . . . . . –65°C to +150°C
Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C
Operating Temperature Range
AD811J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0°C to +70°C
AD811A . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
AD811S . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
8-Pin Plastic Package:
θ
JA
= 90°C/Watt
8-Pin Cerdip Package:
θ
JA
= 110°C/Watt
8-Pin SOIC Package:
θ
JA
= 155°C/Watt
16-Pin SOIC Package:
θ
JA
= 85°C/Watt
20-Pin SOIC Package:
θ
JA
= 80°C/Watt
20-Pin LCC Package:
θ
JA
= 70°C/Watt
The maximum power that can be safely dissipated by the
AD811 is limited by the associated rise in junction temperature.
For the plastic packages, the maximum safe junction tempera-
ture is 145°C. For the cerdip and LCC packages, the maximum
junction temperature is 175°C. If these maximums are exceeded
momentarily, proper circuit operation will be restored as soon as
the die temperature is reduced. Leaving the device in the “over-
heated” condition for an extended period can result in device
burnout. To ensure proper operation, it is important to observe
the derating curves in Figures 17 and 18.
While the AD811 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature is not exceeded under all conditions. One important
example is when the amplifier is driving a reverse terminated
75
Ω
cable and the cable’s far end is shorted to a power supply.
With power supplies of
±
12 volts (or less) at an ambient tem-
perature of +25°C or less, if the cable is shorted to a supply rail,
then the amplifier will not be destroyed, even if this condition
persists for an extended period.
ESD SUSCEPTIBILITY
ORDERING GUIDE
Model
Temperature
Range
Package
Option*
AD811AN
AD811AR-16
AD811AR-20
AD811JR
AD811SQ/883B
5962-9313001MPA
AD811SE/883B
5962-9313001M2A
AD811JR-REEL
AD811JR-REEL7
AD811AR-16-REEL
AD811AR-16-REEL7
AD811AR-20-REEL
AD811ACHIPS
AD811SCHIPS
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
–55°C to +125°C
–55°C to +125°C
–55°C to +125°C
–55°C to +125°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
–40°C to +85°C
–55°C to +125°C
N-8
R-16
R-20
SO-8
Q-8
Q-8
E-20A
E-20A
SO-8
SO-8
SO-8
SO-8
SO-8
Die
Die
ESD (electrostatic discharge) sensitive device. Electrostatic
charges as high as 4000 volts, which readily accumulate on the
human body and on test equipment, can discharge without de-
tection. Although the AD811 features proprietary ESD protec-
tion circuitry, permanent damage may still occur on these
devices if they are subjected to high energy electrostatic dis-
charges. Therefore, proper ESD precautions are recommended
to avoid any performance degradation or loss of functionality.
METALIZATION PHOTOGRAPH
Contact Factory for Latest Dimensions.
Dimensions Shown in Inches and (mm).
*E = Ceramic Leadless Chip Carrier; N = Plastic DIP; Q = Cerdip;
SO (R) = Small Outline IC (SOIC).
REV. C
–3–
AD811–Typical Characteristics
T
A
= +25°C
15
MAGNITUDE OF THE OUTPUT VOLTAGE –
±
Volts
20
20
T
A
= +25°C
15
COMMON-MODE VOLTAGE RANGE –
±
Volts
NO LOAD
10
10
R
L
= 150Ω
5
5
0
0
5
10
SUPPLY VOLTAGE –
±
Volts
15
20
0
0
5
10
SUPPLY VOLTAGE –
±
Volts
15
20
Figure 1. Input Common-Mode Voltage Range vs. Supply
Figure 2. Output Voltage Swing vs. Supply
35
21
30
QUIESCENT SUPPLY CURRENT – mA
18
OUTPUT VOLTAGE – Volts p–p
V
S
=
±15V
25
20
15
V
S
=
±5V
15
V
S
=
±15V
12
V
S
=
±5V
9
10
5
0
10
6
1k
100
LOAD RESISTANCE –
Ω
10k
3
–60
–40
–20
0
20
60
40
80
100
JUNCTION TEMPERATURE –
°C
120
140
Figure 3. Output Voltage Swing vs. Resistive Load
Figure 4. Quiescent Supply Current vs. Junction
Temperature
10
NONINVERTING INPUT
±5
TO
±15V
10
8
INPUT OFFSET VOLTAGE – mV
6
4
2
0
–2
–4
–6
–8
INPUT BIAS CURRENT – µA
0
V
S
=
±5V
INVERTING
INPUT
–10
V
S
=
±5V
–20
V
S
=
±15V
V
S
=
±15V
–30
–60
–40
–20
0
20
40
60
80
100
JUNCTION TEMPERATURE –
°C
120
140
–10
–60
–40
–20
0
20
40
60
80
100
120
140
JUNCTION TEMPERATURE –
°C
Figure 5. Input Bias Current vs. Junction Temperature
Figure 6. Input Offset Voltage vs. Junction Temperature
–4–
REV. C
AD811
250
2.0
V
S
=
±15V
R
L
= 200Ω
V
OUT
=
±10V
TRANSRESISTANCE – MΩ
SHORT CIRCUIT CURRENT – mA
200
V
S
=
±15V
150
1.5
1.0
100
V
S
=
±5V
0.5
V
S
=
±5V
R
L
= 150Ω
V
OUT
=
±2.5V
50
–60
–40
–20
0
20
40
60
80
100
JUNCTION TEMPERATURE –
°C
120
140
0
–60
–40
–20
0
20
40
60
80
100
JUNCTION TEMPERATURE –
°C
120
140
Figure 7. Short Circuit Current vs. Junction Temperature
Figure 8. Transresistance vs. Junction Temperature
10
100
100
CLOSED-LOOP OUTPUT RESISTANCE –
Ω
1
NOISE VOLTAGE – nV/ Hz
INVERTING CURRENT V
S
=
±5
TO 15V
10
10
0.1
V
S
=
±15V
GAIN = +2
R
FB
= 649Ω
0.01
10k
VOLTAGE NOISE V
S
=
±15V
VOLTAGE NOISE V
S
=
±5V
1
100k
1M
FREQUENCY – Hz
10M
100M
10
100
1k
FREQUENCY – Hz
10k
1
100k
Figure 9. Closed-Loop Output Resistance vs. Frequency
Figure 10. Input Noise vs. Frequency
10
RISE TIME
8
60
–3dB BANDWIDTH – MHz
OVERSHOOT – %
200
10
160
V
O
= 1V p–p
V
S
=
±15V
R
L
= 150Ω
GAIN = +2
8
RISETIME – ns
6
OVERSHOOT
4
V
S
=
±15V
V
O
= 1V p–p
R
L
= 150Ω
GAIN = +2
40
120
BANDWIDTH
80
6
20
4
2
0
40
PEAKING
2
0
400Ω
600Ω
1.0kΩ
1.2kΩ
1.4kΩ
800Ω
VALUE OF FEEDBACK RESISTOR (R
FB
)
1.6kΩ
0
400Ω
600Ω
1.0kΩ
1.2kΩ
1.4kΩ
800Ω
VALUE OF FEEDBACK RESISTOR – R
FB
0
1.6kΩ
Figure 11. Rise Time & Overshoot vs. Value of
Feedback Resistor, R
FB
Figure 12. 3 dB Bandwidth & Peaking vs. Value of R
FB
REV. C
–5–
PEAKING – dB
NOISE CURRENT – pA/ Hz
V
S
=
±5V
NONINVERTING CURRENT V
S
=
±5
TO 15V
NXP MCU
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