PD - 95908
IRG4PSH71UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
• Lead-Free
C
UltraFast Copack IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
= 2.52V
@V
GE
= 15V, I
C
= 50A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
• HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI
SUPER - 247
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
I
F
@ Tc = 100°C
I
FM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Gate-to-Emitter Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Max.
1200
99
50
200
200
±20
70
200
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
Ã
d
V
W
°C
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
–––
–––
–––
–––
20 (2.0)
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.36
0.36
–––
38
–––
Units
°C/W
N (kgf)
g (oz.)
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1
09/20/04
IRG4PSH71UDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
gfe
I
CES
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
eÃ
1200
19
—
—
—
—
3.0
—
48
—
—
—
—
—
—
Min. Typ. Max. Units
Conditions
f
V
FM
I
GES
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
—
—
V V
GE
= 0V, I
C
= 250µA
—
—
V V
GE
= 0V, I
C
= 1.0A
0.78 — V/°C V
GE
= 0V, I
C
= 1mA
I
C
= 70A
V
GE
= 15V
2.52 2.70
V
I
C
= 140A
See Fig.2, 5
3.17 —
I
C
= 70A, T
J
= 150°C
2.68 —
V
CE
= V
GE
, I
C
= 250µA
—
6.0
-9.2
— mV/°C V
CE
= V
GE
, I
C
= 1.0mA
72
—
S V
CE
= 100V, I
C
= 70A
—
500 µA V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 10V
—
2.0
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
— 5000
2.92 3.9
V I
F
= 70A See Fig.13
I
F
= 70A, T
J
= 150°C
2.88 3.7
— ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
TS
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
380
61
130
46
77
250
220
8.8
9.4
18.2
43
78
330
480
26
13
6640
420
60
110
180
6.0
8.9
350
570
24
200
—
—
350
330
—
—
19.7
—
—
—
—
—
—
—
—
—
170
270
9.0
13
530
Conditions
I
C
= 70A
See Fig.8
nC V
CC
= 400V
V
GE
= 15V
I
C
= 70A, V
CC
= 960V
ns V
GE
= 15V, R
G
= 5.0Ω
Energy losses include "tail"
See Fig. 9, 10, 11, 14
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 14
I
C
= 70A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0Ω
Energy losses include "tail"
ns
mJ
nH Measured 5mm from package
V
GE
= 0V
See Fig.7
pF V
CC
= 30V,
f = 1.0MHz
T
J
=25°C
See Fig
ns
T
J
=125°C
14
See Fig
15
See Fig
16
See Fig
17
di/dt = 200A/µs
V
R
= 200V
I
F
= 70A
A
T
J
=25°C
T
J
=125°C
nC
T
J
=25°C
T
J
=125°C
870 1300
150 230 A/µs
T
J
=25°C
T
J
=125°C
130 200
2
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IRG4PSH71UDPbF
40
30
Load Current ( A )
20
Square wave:
60% of rated
voltage
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include
effects of
reverse recovery
Power Dissipation = 58W
10
Ideal diodes
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
1000
1000.0
IC , Collector-to Emitter Current (A)
IC, Collector-to-Emitter Current (A)
100
100.0
TJ = 150°C
10
T J = 150°C
10.0
T J = 25°C
1
T J = 25°C
1.0
VGE= 15V
< 60µs PULSE WIDTH
0.1
0
1
2
3
4
5
VCC = 50V
< 60µs PULSE WIDTH
0.1
4
6
8
10
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PSH71UDPbF
100
4.0
VCE , Collector-to Emitter Voltage (V)
V GE = 15V
VGE = 15V
380µs PULSE WIDTH
Maximum DC Collector Current (A)
IC = 140A
80
3.5
60
3.0
IC = 70A
2.5
40
IC = 35A
2.0
20
0
25
50
75
100
125
150
1.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
2
τ
0.01
0.001
Ri (°C/W)
τi
(sec)
0.253
0.009159
0.1057
0.038041
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci= i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1E-005
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PSH71UDPbF
14000
12000
10000
VGE = 0V,
f = 1 MHZ
C ies = C ge + C gc, C ce
C res = C gc
C oes = C ce + Cgc
SHORTED
20
VGE, Gate-to-Emitter Voltage (V)
16
VCC = 400V
IC = 70A
C, Capacitance (pF)
Cies
8000
6000
12
Coes
4000
8
Cres
2000
0
1
10
100
1000
4
0
0
100
200
300
400
VCE, Collector-to-Emitter Voltage (V)
QG, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
22
VCC = 960V
VGE = 15V
1000
R G = 5.0
Ω
VGE = 15V
VCC = 960V
100
I C = 140A
Switching Losses (mJ)
T J = 25°C
I C = 70A
20
Total Switching Losses (mJ)
I C = 70A
10
I C = 35A
18
16
0
10
20
30
40
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
RG, Gate Resistance (Ω)
T J, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs.
Gate Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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