PD - 95187
IRG4PH40UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• Optimized for power conversion; SMPS, UPS
and welding
• Industry standard TO-247AC package
• Lead-Free
C
Ultra Fast Speed IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
=
2.43V
@V
GE
= 15V, I
C
= 21A
n-channel
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
1200
41
21
82
82
± 20
270
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
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1
04/26/04
IRG4PH40UPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
1200 —
—
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
T
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage — 0.43 —
V/°C V
GE
= 0V, I
C
= 1.0mA
— 2.43 3.1
I
C
= 21A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
— 2.97 —
I
C
= 41A
See Fig.2, 5
V
— 2.47 —
I
C
= 21A , T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance
U
16
24
—
S
V
CE
=
100V, I
C
= 21A
—
—
250
V
GE
= 0V, V
CE
= 1200V
Zero Gate Voltage Collector Current
—
—
2.0
µA
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
—
— 5000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
86
13
29
24
24
220
180
1.04
3.40
4.44
24
25
310
380
7.39
13
1800
120
18
Max. Units
Conditions
130
I
C
= 21A
20
nC
V
CC
= 400V
See Fig. 8
44
V
GE
= 15V
—
—
T
J
= 25°C
ns
330
I
C
= 21A, V
CC
= 960V
270
V
GE
= 15V, R
G
= 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 14
5.2
—
T
J
= 150°C,
—
I
C
= 21A, V
CC
= 960V
ns
—
V
GE
= 15V, R
G
= 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 11, 14
—
nH
Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 10Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
S
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4PH40UPbF
50
F o r b o th :
T ria n g u la r w a ve :
I
40
D uty c yc le: 50%
T J = 125°C
T s ink = 90°C
G ate driv e as spec ified
Load Current ( A )
P o w e r D is s ip a tio n = 3 5 W
C la m p vo l ta g e :
8 0 % o f ra te d
30
S q u a re wave :
6 0 % o f ra te d
vo l ta g e
20
I
10
Id e a l d io de s
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
o
C
10
10
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 25
o
C
V
= 15V
20µs PULSE WIDTH
GE
1
10
1
1
V
= 50V
5µs PULSE WIDTH
CC
5
6
7
8
9
10
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PH40UPbF
50
4.0
40
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
I
C
= 42 A
Maximum DC Collector Current(A)
3.0
30
I
C
= 21 A
I
C
=10.5 A
2.0
20
10
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
T
J
Junction Temperature ( °C
°
)
C)
J
,
, Junction Temperature (
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.001
0.01
P
DM
t
1
t
2
1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH40UPbF
4000
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
3000
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 21A
16
Cies
2000
12
8
1000
C
oes
C
res
4
0
1
10
100
0
V
CE
, Collector-to-Emitter Voltage (V)
0
20
40
60
80
100
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 960V
V
GE
= 15V
T
J
= 25
°
C
4.8
I
C
= 21A
100
R
G
=
10
Ω
Ohm
V
GE
= 15V
V
CC
= 960V
I
C
=
42
A
I
C
=
21
A
I
C
=
10.5
A
10
4.6
4.4
1
4.2
4.0
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
R
G
Gate Resistance (Ohm)
,
, Gate Resistance (
Ω )
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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5
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