PD - 94858
IRG4PC50WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction
offers tighter parameters distribution, exceptional
reliability
Lead-Free
C
V
CES
= 600V
G
E
V
CE(on) max.
=
2.30V
@V
GE
= 15V, I
C
= 27A
n-channel
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Absolute Maximum Ratings
TO-247AC
Max.
600
55
27
220
220
± 20
170
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
0.24
6 (0.21)
Max.
0.64
40
Units
°C/W
g (oz)
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1
11/26/03
IRG4PC50WPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
18
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage 0.41
V/°C V
GE
= 0V, I
C
= 5.0mA
1.93 2.3
I
C
= 27A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
2.25
I
C
= 55A
See Fig.2, 5
V
1.71
I
C
= 27A , T
J
= 150°C
Gate Threshold Voltage
3.0
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
-11
mV/°C V
CE
= V
GE
, I
C
= 1.0mA
Forward Transconductance
27
41
S
V
CE
=
100 V, I
C
= 27A
250
V
GE
= 0V, V
CE
= 600V
Zero Gate Voltage Collector Current
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
±100
nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max. Units
Conditions
180 270
I
C
= 27A
24
36
nC
V
CC
= 400V
See Fig.8
63
95
V
GE
= 15V
46
33
T
J
= 25°C
ns
120 180
I
C
= 27A, V
CC
= 480V
57
86
V
GE
= 15V, R
G
= 5.0Ω
0.08
Energy losses include "tail"
0.32
mJ See Fig. 9, 10, 14
0.40 0.5
31
T
J
= 150°C,
43
I
C
= 27A, V
CC
= 480V
ns
210
V
GE
= 15V, R
G
= 5.0Ω
62
Energy losses include "tail"
1.14
mJ See Fig. 10,11, 14
13
nH
Measured 5mm from package
3700
V
GE
= 0V
260
pF
V
CC
= 30V
See Fig. 7
68
= 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC50WPbF
100
For both:
Triangular wave:
80
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Load Current ( A )
Power Dissipation = 40W
Clamp voltage:
80% of rated
60
Square wave:
60% of rated
voltage
40
20
Ideal diodes
0
0.1
1
10
100
A
1000
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
100
100
T
J
= 150
°
C
T
J
= 150
°
C
T
J
= 25
°
C
T
J
= 25
°
C
10
10
1
V
GE
= 15V
20µs PULSE WIDTH
1
10
1
V
CC
= 50V
5µs PULSE WIDTH
5
6
7
8
9
10
11
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PC50WPbF
60
3.0
50
40
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
Maximum DC Collector Current(A)
I
C
= 54 A
2.0
30
I
C
= 27 A
I
C
=13.5 A
20
10
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50WPbF
8000
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 27A
C, Capacitance (pF)
6000
16
Cies
4000
12
8
2000
Coes
Cres
4
0
1
10
0
V
CE
, Collector-to-Emitter Voltage (V)
0
40
80
120
160
200
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 27A
10
R
G
= Ohm
5.0
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
54
A
2.0
1
I
C
=
27
A
I
C
=
13.5
A
1.0
0.0
0
R
, Gate
Resistance
Ω )
R
G
G
, Gate
Resistance
(
(Ohm)
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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