PD -95183
IRG4PC40WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and constructionoffers
tighter parameters distribution, exceptional reliability
• Lead-Free
C
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.05V
@V
GE
= 15V, I
C
= 20A
n-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
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1
04/23/04
IRG4PC40WPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
—
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
0.44
— 2.05
Collector-to-Emitter Saturation Voltage
— 2.36
V
CE(ON)
— 1.90
V
GE(th)
Gate Threshold Voltage
3.0
—
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
—
13
g
fe
Forward Transconductance
U
18
28
—
—
I
CES
Zero Gate Voltage Collector Current
—
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 1.0mA
2.5
I
C
= 20A
V
GE
= 15V
—
I
C
= 40A
See Fig.2, 5
V
—
I
C
= 20A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
=
100 V, I
C
=20A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
98
12
36
27
22
100
74
0.11
0.23
0.34
25
23
170
124
0.85
13
1900
140
35
Max. Units
Conditions
147
I
C
= 20A
18
nC
V
CC
= 400V
See Fig.8
54
V
GE
= 15V
—
—
T
J
= 25°C
ns
150
I
C
= 20A, V
CC
= 480V
110
V
GE
= 15V, R
G
= 10Ω
—
Energy losses include "tail"
—
mJ
See Fig. 9,10, 14
0.45
—
T
J
= 150°C,
—
I
C
= 20A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 10Ω
—
Energy losses include "tail"
—
mJ
See Fig.10,11, 14
—
nH
Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 10Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
S
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC40WPbF
50
F o r b o th :
Tria n g u la r w a ve :
40
Load Current ( A )
D u ty c y c le : 5 0 %
TJ = 12 5° C
T s in k = 9 0 °C
G at e d riv e as sp ec ifie d
P o w e r D is s ip a tio n = 2 8 W
C la m p vo l ta g e :
8 0 % o f ra te d
30
S q u a re w ave :
6 0 % o f ra t e d
v o lta g e
20
10
Id e al d io d e s
0
0.1
1
10
100
A
1000
f, Frequency (kH z)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
T
J
= 25
°
C
T
J
= 150
°
C
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150
°
C
10
10
T
J
= 25
°
C
1
1.0
V
= 15V
80µs PULSE WIDTH
GE
2.0
3.0
4.0
5.0
1
V
= 50V
5µs PULSE WIDTH
CC
5
7
9
11
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PC40WPbF
50
3.0
V
CE
, Collector-to-Emitter Voltage(V)
V
=
15V WIDTH
80 us PULSE
GE
Maximum DC Collector Current(A)
40
I
C
= 40 A
2.5
30
2.0
I
C
= 20 A
I
C
= 10 A
20
10
1.5
0
25
50
75
100
125
150
T
C
, Case Temperature (
°
C)
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC40WPbF
4000
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
3000
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 20A
16
C
ies
2000
12
C
oes
1000
8
C
res
4
0
1
10
100
0
V
CE
, Collector-to-Emitter Voltage (V)
0
20
40
60
80
100
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.0
Total Switching Losses (mJ)
0.8
0.7
0.6
0.5
0.4
0.3
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
0.9
T
J
= 25
°
C
I
C
= 20A
10
R
G
= 10Ohm
10
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
40
A
1
I
C
=
20
A
I
C
=
10
A
10
(Ω)
R
G
, Gate Resistance (Ohm)
20
30
40
50
60
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
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Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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