PD -95430
IRG4PC40FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.50V
@V
GE
= 15V, I
C
= 27A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
49
27
200
200
± 20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
0.24
6 (0.21)
Max.
0.77
40
Units
°C/W
g (oz)
www.irf.com
1
06/17/04
IRG4PC40FPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
Emitter-to-Collector Breakdown Voltage
18
V
(BR)ECS
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
0.70
1.50
V
CE(ON)
Collector-to-Emitter Saturation Voltage
1.85
1.56
V
GE(th)
Gate Threshold Voltage
3.0
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
-12
g
fe
Forward Transconductance
9.2
12
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Max. Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V
V
GE
= 0V, I
C
= 1.0A
V/°C V
GE
= 0V, I
C
= 1.0mA
V
GE
= 15V
1.7
I
C
= 27A
I
C
= 49A
See Fig.2, 5
V
I
C
= 27A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 250µA
S
V
CE
=
100V, I
C
= 27A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 n A V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
100
15
35
26
18
240
170
0.37
1.81
2.18
25
21
380
310
3.9
13
2200
140
29
Max. Units
Conditions
150
I
C
= 27A
23
nC
V
CC
= 400V
See Fig. 8
53
V
GE
= 15V
T
J
= 25°C
ns
360
I
C
= 27A, V
CC
= 480V
250
V
GE
= 15V, R
G
= 10Ω
Energy losses include "tail"
mJ
See Fig. 10, 11, 13, 14
2.8
T
J
= 150°C,
I
C
= 27A, V
CC
= 480V
ns
V
GE
= 15V, R
G
= 10Ω
Energy losses include "tail"
mJ
See Fig. 13, 14
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V
See Fig. 7
= 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 10Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4PC40FPbF
80
For both:
Triangular wave:
60
Duty cycle: 50%
T
J
= 125°C
T
sink
= 90°C
Gate drive as specified
Power Dissipation = 35W
Load Current (A)
Clamp voltage:
80% of rated
Square wave:
40
60% of rated
voltage
20
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 1
- Typical Load Current vs. Frequency
1000
1000
(A)
I
C
, Collector-to-Emitter Current
T
J
= 25°C
100
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150°C
T
J
= 150°C
10
10
T
J
= 25°C
1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
1
5
6
7
8
V
CC
= 50V
5µs PULSE WIDTH
A
9
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
www.irf.com
Fig. 3
- Typical Transfer Characteristics
3
IRG4PC40FPbF
50
V
GE
= 15V
2.5
V
CE
, Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 54A
40
2.0
30
20
I
C
= 27A
1.5
10
I
C
= 14A
1.0
0
25
50
75
100
125
150
A
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1 2
2. Peak T
J
= P
DM
x Z
thJC
+ T C
P
DM
t
0.02
0.01
1
t2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PC40FPbF
4000
V
GE
= 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
3000
20
SHORTED
V
CE
= 400V
I
C
= 27A
V
GE
, Gate-to-Emitter Voltage (V)
C , Capacitance ( pF)
16
C
ies
2000
12
8
1000
C
oes
C
res
4
0
1
10
A
100
0
0
20
40
60
80
100
A
120
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.60
Total Switchig Losses (mJ)
Total Switching Losses (mJ)
2.50
V
CC
= 480V
V
GE
= 15V
T
J
= 25°C
I
C
= 27A
10
I
C
= 54A
I
C
= 27A
2.40
1
I
C
= 14A
2.30
2.20
2.10
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
R
G
= 10
Ω
V
GE
= 15V
V
CC
= 480V
A
100 120 140 160
R
G
, Gate Resistance
(Ω)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
