PD - 94911A
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRG4PC40FDPbF
Fast CoPack IGBT
C
Benefits
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standard TO-247AC package
Lead-Free
Generation -4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.50V
@V
GE
= 15V, I
C
= 27A
n-channel
TO-247AC
Absolute Maximum Ratings
Max.
600
49
27
196
196
15
200
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.77
1.7
------
40
------
Units
°C/W
g (oz)
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1
06/17/2010
IRG4PC40FDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown Voltage 600
V
(BR)CES
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ----
V
CE(on)
Collector-to-Emitter Saturation Voltage
----
----
----
Gate Threshold Voltage
3.0
V
GE(th)
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
9.2
Zero Gate Voltage Collector Current
----
I
CES
----
V
FM
Diode Forward Voltage Drop
----
----
I
GES
Gate-to-Emitter Leakage Current
----
Typ. Max. Units
----
----
V
0.70 ---- V/°C
1.50 1.7
1.85 ----
V
1.56 ----
---- 6.0
-12 ---- mV/°C
12
----
S
---- 250
µA
---- 3500
1.3 1.7
V
1.2 1.6
---- ±100 n A
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 27A
V
GE
= 15V
I
C
= 49A
See Fig. 2, 5
I
C
= 27A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 100V, I
C
= 27A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 15A
See Fig. 13
I
C
= 15A, T
J
= 150°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ.
100
15
35
63
32
230
170
0.95
2.01
2.96
63
33
350
310
4.7
13
2200
140
29
42
74
4.0
6.5
80
220
188
160
Max. Units
Conditions
150
I
C
= 27A
23
nC
V
CC
= 400V
See Fig. 8
53
V
GE
= 15V
----
T
J
= 25°C
----
ns
I
C
= 27A, V
CC
= 480V
350
V
GE
= 15V, R
G
= 10Ω
250
Energy losses include "tail" and
----
diode reverse recovery.
----
mJ
See Fig. 9, 10, 11, 18
4.0
----
T
J
= 150°C, See Fig. 9, 10, 11, 18
----
ns
I
C
= 27A, V
CC
= 480V
----
V
GE
= 15V, R
G
= 10Ω
----
Energy losses include "tail" and
----
mJ
diode reverse recovery.
----
nH
Measured 5mm from package
----
V
GE
= 0V
----
pF
V
CC
= 30V
See Fig. 7
----
= 1.0MHz
60
ns
T
J
= 25°C See Fig.
120
T
J
= 125°C
14
I
F
= 15A
6.0
A
T
J
= 25°C See Fig.
10
T
J
= 125°C
15
V
R
= 200V
180
nC
T
J
= 25°C See Fig.
600
T
J
= 125°C
16
di/dt 200A/µs
---- A/µs T
J
= 25°C See Fig.
----
T
J
= 125°C
17
2
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IRG4PC40FDPbF
40
30
Load Current (A)
Duty cycle: 50%
T
J
= 125°C
T
sink
= 90°C
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 35W
60% of rated
voltage
20
10
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
(A)
I
C
, Collector-to-Emitter Current
100
T
J
= 25°C
T
J
= 150°C
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150°C
10
10
T
J
= 25°C
1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
1
5
6
7
8
V
CC
= 50V
5µs PULSE WIDTH
A
9
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC40FDPbF
50
V
GE
= 15V
2.5
V
CE
, Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
V
GE
= 15V
80µs PULSE WIDTH
40
I
C
= 54A
2.0
30
20
I
C
= 27A
1.5
10
I
C
= 14A
1.0
-60
-40
-20
0
20
40
60
80
0
25
50
75
100
125
150
A
100 120 140 160
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t2
Notes:
1. Duty factor D = t / t
1 2
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC40FDPbF
4000
V
GE
= 0V
f = 1 MHz
SHORTED
20
Coes = Cce + Cgc
3000
V
GE
, Gate-to-Emitter Voltage (V)
Cies = Cge + Cgc + Cce
Cres = Cce
V
CE
= 400V
I
C
= 27A
C , Capacitance ( pF)
16
C
ies
2000
12
8
1000
C
oes
C
res
4
0
1
10
A
100
0
0
20
40
60
80
100
A
120
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.3
Total Switchig Losses (mJ)
Total Switchig Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25°C
= 27A
100
R
G
= 10
Ω
V
GE
= 15V
V
CC
= 480V
3.2
10
I
C
= 54A
I
C
= 27A
I
C
= 14A
3.1
1
3.0
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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