PD - 94923
IRG4PC30UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.95V
@V
GE
= 15V, I
C
= 12A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
0.24
6 (0.21)
Max.
1.2
40
Units
°C/W
g (oz)
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1
12/30/03
IRG4PC30UPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
18
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
0.63
1.95
Collector-to-Emitter Saturation Voltage
2.52
V
CE(ON)
2.09
V
GE(th)
Gate Threshold Voltage
3.0
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
-13
g
fe
Forward Transconductance
3.1
8.6
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Max. Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V
V
GE
= 0V, I
C
= 1.0A
V/°C V
GE
= 0V, I
C
= 1.0mA
2.1
I
C
= 12A
V
GE
= 15V
I
C
= 23A
See Fig.2, 5
V
I
C
= 12A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 250µA
S
V
CE
=
100 V, I
C
= 12A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 n A V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
50
8.1
18
17
9.6
78
97
0.16
0.20
0.36
20
13
180
140
0.73
13
1100
73
14
Max. Units
Conditions
75
I
C
= 12A
12
nC
V
CC
= 400V
See Fig.8
27
V
GE
= 15V
T
J
= 25°C
ns
120
I
C
= 12A, V
CC
= 480V
150
V
GE
= 15V, R
G
= 23Ω
Energy losses include "tail"
mJ
See Fig. 10, 11, 13, 14
0.50
T
J
= 150°C,
I
C
= 12A, V
CC
= 480V
ns
V
GE
= 15V, R
G
= 23Ω
Energy losses include "tail"
mJ See Fig. 13, 14
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V
See Fig. 7
= 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 23Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC30UPbF
40
For both:
Triangular wave:
Load Current (A)
30
Duty cycle: 50%
T
J
= 125°C
T
sink
= 90°C
Gate drive as specified
Power Dissipation = 24W
Clamp voltage:
80% of rated
Square wave:
20
60% of rated
voltage
10
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 1
- Typical Load Current vs. Frequency
100
100
T
J
= 25°C
T
J
= 150°C
10
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
1
0.1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
0.1
5
6
7
8
V
CC
= 10V
5µs PULSE WIDTH
A
9
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC30UPbF
Maximum DC Collector Current (A
V
CE
, Collector-to-Emitter Voltage (V)
25
V
GE
= 15V
3.0
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 24A
20
2.5
15
I
C
= 12A
2.0
10
5
I
C
= 6.0A
A
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
25
50
75
100
125
A
150
1.5
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t2
Notes:
1. Duty factor D = t
1
/t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC30UPbF
2000
C, Capacitance (pF)
1600
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CE
= 400V
I
C
= 12A
16
C
ies
1200
12
800
C
oes
C
res
8
400
4
0
1
10
A
100
0
0
10
20
30
40
A
50
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5
Total Switching Losses (mJ)
0.4
Total Switching Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25°C
= 12A
10
R
G
= 23
Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 24A
1
I
C
= 12A
I
C
= 6.0A
0.3
0.2
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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