PD -95597A
IRG4IBC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High switching speed optimized for up to 25kHz
with low V
CE(on)
Short Circuit Rating 10µs @ 125°C, V
GE
= 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220 FULLPAK
Lead-Free
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.21V
@V
GE
= 15V, I
C
= 9.2A
n-channel
Benefits
Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
IGBT's optimized for specific application conditions
HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
Designed to exceed the power handling capability of
equivalent industry-standard IGBT
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
ISOL
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-220 FULLP
AK
Max.
600
17
9.2
34
34
9.2
34
10
2500
± 20
45
18
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
2.0 (0.07)
Max.
2.8
3.7
65
Units
°C/W
g (oz)
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1
06/11/2010
IRG4IBC30KDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown Voltage 600
V
Temperature Coeff. of Breakdown Voltage 0.54 V/°C
Collector-to-Emitter Saturation Voltage
2.21 2.7
2.88
V
2.36
Gate Threshold Voltage
3.0
6.0
Temperature Coeff. of Threshold Voltage
-12
mV/°C
Forward Transconductance
5.4 8.1
S
Zero Gate Voltage Collector Current
250
µA
2500
Diode Forward Voltage Drop
1.4 1.7
V
1.3 1.6
Gate-to-Emitter Leakage Current
±100 nA
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 16A
V
GE
= 15V
See Fig. 2, 5
I
C
= 28A
I
C
= 16A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 100V, I
C
= 16A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 12A
See Fig. 13
I
C
= 12A, T
J
= 150°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
10
Typ. Max. Units
Conditions
67 100
I
C
= 16A
11
16
nC
V
CC
= 400V
See Fig.8
25
37
V
GE
= 15V
60
42
T
J
= 25°C
ns
160 250
I
C
= 16A, V
CC
= 480V
80 120
V
GE
= 15V, R
G
= 23Ω
0.60
Energy losses include "tail"
0.58
mJ and diode reverse recovery
1.18 1.6
See Fig. 9,10,14
µs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 10Ω , V
CPK
< 500V
58
T
J
= 150°C,
See Fig. 10,11,18
42
I
C
= 16A, V
CC
= 480V
ns
210
V
GE
= 15V, R
G
= 23Ω
160
Energy losses include "tail"
1.69
mJ and diode reverse recovery
7.5
nH
Measured 5mm from package
920
V
GE
= 0V
110
pF
V
CC
= 30V
See Fig. 7
27
= 1.0MHz
42
60
ns
T
J
= 25°C See Fig.
80 120
T
J
= 125°C
14
I
F
= 12A
3.5 6.0
A
T
J
= 25°C See Fig.
5.6
10
T
J
= 125°C
15
V
R
= 200V
80 180
nC
T
J
= 25°C
See Fig.
220 600
T
J
= 125°C
16
di/dt = 200Aµs
180
A/µs T
J
= 25°C
See Fig.
160
T
J
= 125°C
17
2
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IRG4IBC30KDPbF
12
For both:
10
LOAD CURRENT (A)
8
Square wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation =
13
W
6
60% of rated
voltage
I
4
2
Ideal diodes
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
o
C
10
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
T
J
= 150
o
C
10
T
J
= 25
o
C
1
1
0.1
V
GE
= 15V
20µs PULSE WIDTH
1
10
0.1
V
CC
= 50V
5µs PULSE WIDTH
5
10
15
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4IBC30KDPbF
20
4.0
Maximum DC Collector Current(A)
15
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 32 A
3.0
10
I
C
= 16 A
2.0
I
C
=
8.0A
8A
5
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
, Junction Temperature ( C)
T
T
J
Junction Temperature ( °C
°
)
J
,
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC30KDPbF
1500
1200
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 16A
16
C, Capacitance (pF)
900
Cies
12
600
8
300
Coes
Cres
4
0
1
10
0
V
CE
, Collector-to-Emitter Voltage (V)
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.50
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
1.40
I
C
= 16A
10
R
G
= Ohm
23
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
32
A
1.30
I
C
=
16
A
1
I
C
=
8.0A
8
A
1.20
1.10
1.00
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R Gate Resistance
Ω )
R
G
G
,
,
Gate Resistance
(
(Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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