PMBD7000
Double high-speed switching diode
Rev. 4 — 16 September 2010
Product data sheet
1. Product profile
1.1 General description
The PMBD7000 consists of two high-speed switching diodes connected in series,
fabricated in planar technology, and encapsulated in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High switching speed: t
rr
≤
4 ns
Repetitive peak forward current:
I
FRM
≤
450 mA
Small SMD plastic package
Reverse voltage: V
R
≤
100 V
Repetitive peak reverse voltage:
V
RRM
≤
100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 1.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 100 V
Min
-
-
-
Typ
-
-
-
Max
0.5
100
4
Unit
μA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
PMBD7000
Double high-speed switching diode
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
3
3
Simplified outline
Graphic symbol
1
2
1
2
006aaa763
3. Ordering information
Table 3.
Ordering information
Package
Name
PMBD7000
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
PMBD7000
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*5C
Type number
PMBD7000
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 16 September 2010
2 of 12
NXP Semiconductors
PMBD7000
Double high-speed switching diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
square wave
t
p
= 1
μs
t
p
= 1 ms
t
p
= 1 s
P
tot
Per device
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[3]
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
Max
100
100
215
125
450
Unit
V
V
mA
mA
mA
-
-
-
[1][4]
4
1
0.5
250
150
+150
+150
A
A
A
mW
°C
°C
°C
total power dissipation
junction temperature
ambient temperature
storage temperature
Single diode loaded.
Double diode loaded.
T
j
= 25
°C
prior to surge.
T
amb
≤
25
°C
-
-
−55
−65
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-t)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
[1][2]
Min
-
-
Typ
-
-
Max
500
360
Unit
K/W
K/W
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMBD7000
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 16 September 2010
3 of 12
NXP Semiconductors
PMBD7000
Double high-speed switching diode
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 50 V
V
R
= 100 V
V
R
= 50 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
-
[1]
[2]
Typ
550
670
-
0.75
-
-
-
-
-
-
-
Max
700
820
1
1.1
1.25
300
500
100
1.5
4
1.75
Unit
mV
mV
V
V
V
nA
nA
μA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
300
I
F
(mA)
200
mbd033
300
I
F
(mA)
(1)
(2)
(3)
mbg382
single diode loaded
200
double diode loaded
100
100
0
0
100
T
amb
(°C)
200
0
0
1
V
F
(V)
2
FR4 PCB, standard footprint
(1) T
j
= 150
°C;
typical values
(2) T
j
= 25
°C;
typical values
(3) T
j
= 25
°C;
maximum values
Fig 1.
Forward current as a function of ambient
temperature; derating curve
Fig 2.
Forward current as a function of forward
voltage
PMBD7000
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 16 September 2010
4 of 12
NXP Semiconductors
PMBD7000
Double high-speed switching diode
10
2
I
FSM
(A)
10
mbg704
10
5
I
R
(nA)
10
4
mbg378
10
3
(1)
(2)
(3)
1
10
2
10
−1
1
10
10
2
10
3
t
p
(μs)
10
4
10
0
100
T
j
(°C)
200
Based on square wave currents.
T
j
= 25
°C;
prior to surge
(1) V
R
= 50 V; maximum values
(2) V
R
= 30 V; typical values
(3) V
R
= 50 V; typical values
Fig 3.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
Fig 4.
Reverse current as a function of junction
temperature
mbg446
0.8
C
d
(pF)
0.6
0.4
0.2
0
0
4
8
12
V
R
(V)
16
f = 1 MHz; T
amb
= 25
°C
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
PMBD7000
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 16 September 2010
5 of 12
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