PD - 97617
IRL6342PbF
V
DS
V
GS
R
DS(on) max
(@V
GS
= 4.5V)
30
±12
14.6
11
9.9
V
V
mΩ
nC
A
6
6
6
*
HEXFET
®
Power MOSFET
'
'
'
'
Q
g (typical)
I
D
(@T
A
= 25°C)
SO-8
Applications
•
Battery operated DC motor inverter MOSFET
•
System/Load Switch
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
⇒
Orderable part number
IRL6342PBF
IRL6342TRPBF
Package Type
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
4000
Tape and Reel
Note
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Power Dissipation
Pulsed Drain Current
Max.
30
±12
9.9
7.9
79
2.5
1.6
0.02
-55 to + 150
Units
V
e
Power Dissipation
e
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes
through
are on page 2
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1
01/03/11
IRL6342PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
0.5
–––
–––
–––
–––
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
22
12.0
15.0
–––
-4.2
–––
–––
–––
–––
–––
11
0.01
0.60
4.6
5.79
5.2
2.0
6.0
12
33
14
1025
97
70
Max.
–––
–––
14.6
19.0
1.1
–––
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
GS
= 0V, I
D
= 250µA
V
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 9.9A
mΩ
V
GS
= 2.5V, I
D
= 7.9A
d
d
V
mV/°C
µA
nA
S
V
DS
= V
GS
, I
D
= 10µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
= 7.9A
V
GS
= 4.5V
V
DS
= 15V
I
D
= 7.9A
nC
Ω
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 7.9A
R
G
= 6.8Ω
See Figs. 18
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
eÃ
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
13
5.2
Max.
2.5
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
S
D
Ã
79
1.2
20
7.8
Typ.
–––
–––
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
J
= 25°C, I
S
= 9.9A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.9A, V
DD
= 24V
di/dt = 100/µs
d
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
d
e
f
Max.
20
50
Units
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 ich square copper board.
R
θ
is measured at
T
J
of approximately 90°C.
2
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IRL6342PbF
100
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
100
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
≤
60µs PULSE WIDTH
0.1
1.3V
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Tj = 25°C
1
1.3V
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 9.9A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 4.5V
10
T J = 150°C
1
T J = 25°C
0.1
1.0
1.5
VDS = 10V
≤60µs
PULSE WIDTH
2.0
2.5
3.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 7.9A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss
VDS= 6.0V
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRL6342PbF
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
TJ = 150°C
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
10
DC
1
T A = 25°C
0.1
Tj = 150°C
Single Pulse
0.1
1.0
10
100
10msec
10
VGS = 0V
1.0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
10
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
1.4
1.2
1.0
0.8
0.6
0.4
0.2
ID = 10µA
ID = 250µA
ID = 1.0mA
8
ID, Drain Current (A)
6
4
2
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
100
Thermal Response ( Z thJA ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRL6342PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
ID = 9.9A
35
30
25
20
15
10
5
1
2
3
4
5
6
7
8
9
10 11 12
T J = 125°C
RDS(on), Drain-to -Source On Resistance ( mΩ)
40
40
35
30
Vgs = 2.5V
25
20
15
10
0
10
20
30
40
50
60
70
80
ID, Drain Current (A)
Vgs = 4.5V
T J = 25°C
Fig 12.
On-Resistance vs. Gate Voltage
250
EAS , Single Pulse Avalanche Energy (mJ)
VGS, Gate -to -Source Voltage (V)
Fig 13.
Typical On-Resistance vs. Drain Current
30000
200
ID
TOP
1.3A
1.9A
BOTTOM 7.9A
25000
20000
Power (W)
150
15000
10000
100
50
5000
0
1E-8
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
1E-7
1E-6
1E-5
1E-4
1E-3
Time (sec)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
Fig 15.
Typical Power vs. Time
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W.
Period
V
GS
=10V
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
-
-
+
R
G
•
dv/dt controlled by R
G
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor "D"
•
D.U.T. - Device Under Test
V
DD
V
DD
+
-
Re-Applied
Voltage
Inductor Curent
Body Diode
Forward Drop
Ripple
≤
5%
I
SD
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
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5
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