IRL6297SDPbF
DirectFET
®
Dual N-Channel Power MOSFET
Applications
l
l
Typical values (unless otherwise specified)
Charge and Discharge Switch for Battery Application
Isolation Switch for Input Power or Battery Application
V
DSS
Q
g tot
27nC
V
GS
Q
gd
9.5nC
R
DS(on)
Q
gs2
1.4nC
R
DS(on)
5.4mΩ@2.5V
20V max ±12V max 3.8mΩ@4.5V
Features and Benefits
l
l
l
Q
rr
21nC
Q
oss
15nC
V
gs(th)
0.80V
Environmentaly Friendly Product
RoHs Compliant, Halogen Free
Dual Common-Drain N-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
D
G
G
D
S
S
SA
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET
®
ISOMETRIC
SQ
SX
ST
SA
MQ
MX
MT
MP
MC
Description
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The
DirectFET
®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET
®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base Part Number
IRL6297SDPbF
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable part number
IRL6297SDTRPbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
20
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
g
e
e
f
VGS, Gate-to-Source Voltage (V)
20
±12
15
12
58
140
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60
ID= 12A
VDS= 16V
VDS= 10V
A
ID = 15A
15
10
5
T J = 25°C
0
0
1
2
3
4
5
6
7
8
9
10 11 12
T J = 125°C
VDS= 4.0V
70
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1
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© 2013 International Rectifier
September 5, 2013
IRL6297SDPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre- Vth Gate-to-Source Charge
Post -Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.50
–––
–––
–––
–––
–––
60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.1
3.8
5.4
0.80
-4.1
–––
–––
–––
–––
–––
54
27
2.2
1.4
9.5
13.9
10.9
15
1.8
8.8
29
41
41
2245
610
395
Max. Units
–––
–––
4.9
6.9
1.10
–––
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nC
Ω
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1.0mA
mΩ
V
mV/°C
µA
nA
S
V
GS
= 4.5V, I
D
= 15A
V
GS
= 2.5V, I
D
h
= 12A
h
V
DS
= V
GS
, I
D
= 35µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 150°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
=12A
V
DS
= 10V, V
GS
= 10V, I
D
= 12A
V
DS
= 10V
nC
V
GS
= 4.5V
I
D
= 12A
See Fig.15
V
DS
= 16 V, V
GS
= 0V
V
DD
= 10V, V
GS
= 4.5V
Ãh
ns
I
D
= 12A
R
G
= 2.0
Ω
See Fig.17
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Diode Characteristics
I
S
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
28
21
Max. Units
25
A
140
1.2
42
32
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
g
h
T
J
= 25°C, I
F
= 12A, V
DD
= 10V
di/dt = 100 A/µs
h
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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© 2013 International Rectifier
September 5, 2013
IRL6297SDPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
1.7
1.1
25
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case ,
Junction-to-PCB Mounted
Linear Derating Factor
e
i
j
fk
Parameter
Typ.
–––
12.5
20
–––
1.0
0.014
Max.
72
–––
–––
5.1
–––
Units
°C/W
e
W/°C
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
10
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
3
Mounted to a PCB
with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
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© 2013 International Rectifier
September 5, 2013
IRL6297SDPbF
1000
TOP
VGS
10V
4.5V
3.5V
3.0V
2.6V
2.4V
2.2V
2.0V
1000
TOP
VGS
10V
4.5V
3.5V
3.0V
2.6V
2.4V
2.2V
2.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
2.0V
2.0V
10
10
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 10V
≤60µs
PULSE WIDTH
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
1.6
ID = -8.5A
1.4
V GS = -10V
V GS = -4.5V
ID, Drain-to-Source Current (A)
1.2
10
1.0
1
0.8
0.1
0
1
1
2
2
3
3
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
9.0
8.0
Vgs = 2.5V
Vgs = 3.5V
Vgs = 4.5V
Vgs = 6.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
T J = 25°C
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
7.0
6.0
5.0
4.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
3.0
0
20
40
60
80
100
120
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
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© 2013 International Rectifier
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
September 5, 2013
ID, Drain Current (A)
IRL6297SDPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
10
T J = 25°C
T J = -40°C
100
100µsec
10
10msec
1
1msec
1
VGS = 0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
DC
0.01
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
60
50
ID, Drain Current (A)
Fig 11.
Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
ID = 35µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig 12.
Maximum Drain Current vs. Case Temperature
300
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
2.1A
3.0A
BOTTOM 12A
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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© 2013 International Rectifier
September 5, 2013
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