StrongIRFET™
IRL60B216
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
I
D (Package Limited)
G
S
60V
1.5m
1.9m
305A
195A
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
S
D
G
TO-220AB
IRL60B216
G
Gate
D
Drain
S
Source
Base part number
IRL60B216
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRL60B216
)
RDS(on), Drain-to -Source On Resistance (m
6
ID = 100A
5
4
3
2
1
0
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
TJ = 125°C
ID, Drain Current (A)
315
Limited By Package
270
225
180
135
90
45
0
25
50
75
100
125
150
175
VGS, Gate -to -Source Voltage (V)
TC , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Max.
305
215
195
780
375
2.5
± 20
IRL60B216
Units
A
W
W/°C
V
°C
-55 to + 175
Storage Temperature Range
T
STG
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
530
E
AS (Thermally limited)
Single Pulse Avalanche Energy
1045
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
0.4
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient
R
JA
–––
62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
mJ
A
mJ
Units
°C/W
Min. Typ. Max.
60
––– –––
––– 0.041 –––
–––
1.5
1.9
–––
1.7
2.2
1.0 –––
2.4
––– –––
1.0
––– ––– 150
––– ––– 100
––– ––– -100
–––
2.0
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 2mA
V
GS
= 10V, I
D
= 100A
m
V
GS
= 4.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 60 V, V
GS
= 0V
µA
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
Current
imitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer
to AN-1140)
Repetitive
rating; pulse width limited by max. junction temperature.
Limited
by T
Jmax
, starting T
J
= 25°C, L = 0.107mH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1420A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while VDS is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 46A, V
GS
=10V.
Pulse drain current is limited to 780A by source bonding technology.
2
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IRL60B216
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
264
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
172
53
80
92
70
185
190
120
15570
1260
880
1260
1645
Typ.
–––
–––
–––
11
52
57
91
116
3.0
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 100A
258
I
D
= 100A
V
DS
= 30V
–––
nC
V
GS
= 4.5V
–––
–––
–––
V
DD
= 30V
–––
I
D
= 30A
ns
–––
R
G
= 2.7
V
GS
= 4.5V
–––
–––
–––
–––
–––
–––
Max. Units
305
A
780
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
C
oss eff.(ER)
Effective Output Capacitance (Energy Related)
C
oss eff.(TR)
Output Capacitance (Time Related)
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
D
S
T
J
= 25°C,I
S
=100A,V
GS
= 0V
T
J
= 25°C
V
DD
= 51V
V/ns T
J
= 175°C,I
S
= 100A,V
DS
= 60V
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
ns
3
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April 29, 2015
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
IRL60B216
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
3.5V
BOTTOM
3.5V
100
BOTTOM
100
60µs
PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
60µs
PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.2
ID = 100A
1.8
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 175°C
10
TJ = 25°C
1.4
1
VDS = 10V
0.1
0
2
4
6
1.0
60µs
PULSE WIDTH
0.6
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 100A
VDS = 48V
VDS = 30V
VDS= 12V
100000
C, Capacitance (pF)
Ciss
10000
Coss
Crss
1000
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
50 100 150 200 250 300 350 400 450
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
April 29, 2015
1000
ID, Drain-to-Source Current (A)
IRL60B216
1000
100
Limited by Package
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
ISD, Reverse Drain Current (A)
100
TJ = 175°C
10
TJ = 25°C
10
1
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1msec
10msec
DC
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
10
VDS , Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
2.0
74
Id = 2.0mA
72
70
68
66
64
62
60
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
Energy (µJ)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-10
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
Fig 12.
Typical C
oss
Stored Energy
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
50
100
150
200
ID, Drain Current (A)
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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April 29, 2015
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