PD - 95955
IRL3803VPbF
HEXFET
®
Power MOSFET
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Lead-Free
Description
D
V
DSS
= 30V
R
DS(on)
= 5.5mΩ
G
S
I
D
= 140A
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
140
110
470
200
1.4
± 16
71
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.74
–––
62
Units
°C/W
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1
12/21/04
IRL3803VPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Min.
30
–––
–––
–––
1.0
82
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
5.5
V
GS
= 10V, I
D
= 71A
mΩ
7.5
V
GS
= 4.5V, I
D
= 59A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 71A
25
V
DS
= 30V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
76
I
D
= 71A
19
nC
V
DS
= 24V
35
V
GS
= 4.5V, See Fig. 6 and 13
–––
V
DD
= 15V
–––
I
D
= 71A
–––
R
G
= 1.3Ω
–––
V
GS
= 4.5V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3720 –––
V
GS
= 0V
1480 –––
V
DS
= 25V
270 –––
pF
ƒ = 1.0MHz, See Fig. 5
1560
400 mJ I
AS
= 71A, L = 0.16mH
Typ.
–––
0.028
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
180
29
37
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 140
showing the
A
G
integral reverse
––– ––– 470
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 71A, V
GS
= 0V
––– 52
78
ns
T
J
= 25°C, I
F
= 71A
––– 91 140
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 160µH
T
J
≤
175°C
max. junction temperature. (See fig. 11)
R
G
= 25Ω, I
AS
= 71A, V
GS
=10V (See Figure 12)
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
I
SD
≤
71A, di/dt
≤
110A/µs, V
DD
≤
V
(BR)DSS
,
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2
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IRL3803VPbF
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
100
2.7V
2.7V
10
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
T
J
= 25
°
C
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 120A
I
D
, Drain-to-Source Current (A)
2.0
1.5
100
1.0
0.5
10
2.5
V DS = 15V
20µs PULSE WIDTH
3.5
4.5
5.5
6.5
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL3803VPbF
6000
5000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 71A
V
DS
= 24V
V
DS
= 15V
12
C, Capacitance (pF)
4000
Ciss
9
3000
2000
Coss
6
1000
3
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
T
J
= 175
°
C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
10
100
100µsec
1msec
T
J
= 25
°
C
1
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10msec
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
1
V
SD
,Source-to-Drain Voltage (V)
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRL3803VPbF
160
LIMITED BY PACKAGE
V
DS
V
GS
R
D
I
D
, Drain Current (A)
120
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
80
40
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
175
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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