PD - 95403
IRL1004PbF
Logic-Level Gate Drive
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Advanced Process Technology
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Ultra Low On-Resistance
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Lead-Free
Description
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HEXFET
®
Power MOSFET
D
V
DSS
= 40V
R
DS(on)
= 0.0065Ω
G
S
I
D
= 130A
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
130
92
520
200
1.3
± 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
qJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
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1
6/17/04
IRL1004PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.0065
V
GS
= 10V, I
D
= 78A
Ω
0.009
V
GS
= 4.5V, I
D
= 65A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 78A
25
V
DS
= 40V, V
GS
= 0V
µA
250
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
100
I
D
= 78A
32
nC V
DS
= 32V
43
V
GS
= 4.5V, See Fig. 6 and 13
–––
V
DD
= 20V
–––
I
D
= 78A
ns
–––
R
G
= 2.5Ω, V
GS
= 4.5V
–––
R
D
= 0.18Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
G
from package
––– 7.5 –––
and center of die contact
––– 5330 –––
V
GS
= 0V
––– 1480 –––
pF V
DS
= 25V
––– 320 –––
ƒ = 1.0MHz, See Fig. 5
Min.
40
–––
–––
–––
1.0
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.04
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
210
25
14
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 130
showing the
A
G
integral reverse
––– ––– 520
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 78A, V
GS
= 0V
––– 78 120
ns
T
J
= 25°C, I
F
= 78A
––– 180 270
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L =0.23mH
R
G
= 25Ω, I
AS
= 78A. (See Figure 12)
I
SD
≤78A,
di/dt
≤
370A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
Pulse width
≤
300µs; duty cycle
≤
2%
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip #93-4
2
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IRL1004PbF
10000
I
D
, Drain-to-Source Current (A)
1000
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
1000
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
100
10
10
2.7V
1
2.7V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 130A
2.0
T
J
= 175
°
C
1.5
10
1.0
1
0.5
0.1
2.0
V DS =
25
50V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL1004PbF
10000
V
GS
, Gate-to-Source Voltage (V)
8000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
12
I
D
= 78 A
V
DS
= 32V
V
DS
= 20V
10
C, Capacitance (pF)
6000
Ciss
8
4000
Coss
6
4
2000
Crss
0
1
10
100
2
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
30
60
90
120
150
180
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
T
J
= 175
°
C
1000
10us
100us
1ms
10
10ms
10
100
T
J
= 25
°
C
1
0.1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
1
T
C
= 25 °C
T
J
= 175 ° C
Single Pulse
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRL1004PbF
140
LIMITED BY PACKAGE
120
V
DS
V
GS
R
G
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
I
D
, Drain Current (A)
100
80
60
40
20
0
-
V
DD
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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