IRGB4715DPbF
IRGS4715DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 650V
I
C
= 15A, T
C
=100°C
t
SC
5.5µs,
T
J(max)
= 175°C
V
CE(ON)
typ. = 1.7V
@ I
C
= 8A
G
E
C
C
E
G
C
E
C
G
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
n-channel
G
Gate
IRGS4715DPbF
D
2
‐Pak
C
Collector
IRGB4715DPbF
TO‐220AB
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Coefficient
Lead-Free, RoHs compliant
Base part number
IRGB4715DPbF
IRGS4715DPbF
Package Type
TO-220
D
2
-Pak
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Tape and Reel Right
800
Orderable Part Number
IRGB4715DPbF
IRGS4715DPbF
IRGS4715DTRLPbF
IRGS4715DTRRPbF
Max.
650
21
15
24
32
21
13
32
±30
100
50
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
Max.
1.5
3.6
–––
62
40
Units
V
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
W
C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
R
JA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (TO-220)
Thermal Resistance, Junction-to-Ambient (D
2
-Pak)
Units
°C/W
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November 12, 2014
IRGB4715DPBF/IRGS4715DPBF
Min.
650
—
Typ.
—
0.8
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
1.7
—
2.1
Gate Threshold Voltage
5.5
—
V
GE(th)
—
-19
V
GE(th)
/T
J
Threshold Voltage Temperature Coeff.
gfe
Forward Transconductance
—
5.7
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
1.0
Gate-to-Emitter Leakage Current
—
—
I
GES
—
1.8
Diode Forward Voltage Drop
V
F
—
1.3
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
.
2.0
V
I
C
= 8A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 8A, V
GE
= 15V, T
J
= 175°C
7.4
V
V
CE
= V
GE
, I
C
= 250µA
—
mV/°C V
CE
= V
GE
, I
C
= 250µA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 8A, PW = 20µs
25
µA V
GE
= 0V, V
CE
= 650V
mA V
GE
= 0V, V
CE
= 650V, T
J
= 175°C
—
±100
nA V
GE
= ±30V
2.8
V
I
F
= 8A
—
I
F
= 8A, T
J
= 175°C
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max Units
Conditions
20
30
I
C
= 8A
6
9
nC V
GE
= 15V
V
CC
= 400V
8
12
200
310
90
180
µJ
I
C
= 8A, V
CC
= 400V, V
GE
=15V
290
490
R
G
= 50, T
J
= 25°C
30
50
Energy losses include tail & diode
20
30
ns reverse recovery
100
120
20
30
340
—
170
510
30
20
120
70
540
50
15
—
—
—
—
—
—
—
—
—
µJ
I
C
= 8A, V
CC
= 400V, V
GE
=15V
R
G
= 50, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
ns
FULL SQUARE
5.5
—
—
—
—
130
86
8
—
—
—
—
V
GE
= 0V
pF V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 32A
V
CC
= 520V, Vp
≤
650V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 400V, Vp
≤
650V
µs
V = +15V to 0V
GE
µJ
ns
A
T
J
= 175°C
V
CC
= 400V, I
F
= 8A
V
GE
= 15V, Rg = 50
2
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November 12, 2014
30
25
Load Current ( A )
IRGB4715DPBF/IRGS4715DPBF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 50W
20
15
Square Wave:
10
5
V
CC
I
Diode as specified
0
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
25
120
20
90
Ptot (W)
25
50
75
100
TC (°C)
125
150
175
15
IC (A)
60
10
5
30
0
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
100
100
Fig. 3
- Power Dissipation vs.
Case Temperature
10µsec
10
IC (A)
IC (A)
100µsec
1msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
10
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
3
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Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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IRGB4715DPBF/IRGS4715DPBF
32
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
32
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
24
24
ICE (A)
16
16
8
8
0
0
2
4
6
V CE (V)
8
10
0
0
2
4
6
V CE (V)
8
10
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
32
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
32
24
24
ICE (A)
16
16
-40°C
25°C
175°C
8
8
0
0
2
4
6
V CE (V)
8
10
0
0.0
0.5
1.0
1.5
V F (V)
2.0
2.5
3.0
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
8
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
8
6
ICE = 4A
ICE = 8A
VCE (V)
6
ICE = 4A
ICE = 8A
ICE = 16A
VCE (V)
ICE = 16A
4
4
2
2
0
5
10
V GE (V)
15
20
0
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
Submit Datasheet Feedback
November 12, 2014
8
IRGB4715DPBF/IRGS4715DPBF
32
TJ = 25°C
TJ = 175°C
6
ICE = 4A
ICE = 8A
ICE = 16A
ICE (A)
24
VCE (V)
4
16
2
8
0
5
10
V GE (V)
15
20
0
6
7
8
9
10 11 12 13 14 15 16
V GE (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
1000
1000
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
800
Swiching Time (ns)
100
tdON
10
tR
tdOFF
tF
Energy (
J)
600
EON
400
EOFF
200
0
0
2
4
6
8
IC (A)
10
12
14
16
1
0
2
4
6
8
IC (A)
10
12
14
16
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; V
CE
= 400V, R
G
= 50; V
GE
= 15V
600
500
Swiching Time (ns)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; V
CE
= 400V, R
G
= 50; V
GE
= 15V
1000
tdOFF
100
tF
tdON
tR
400
Energy (J)
EON
300
200
100
0
0
20
40
60
80
100
Rg (
)
EOFF
10
1
0
20
40
60
80
100
RG (
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; V
CE
= 400V, I
CE
= 8A; V
GE
= 15V
5
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Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; V
CE
= 400V, I
CE
= 8A; V
GE
= 15V
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November 12, 2014
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