PD - 97519B
IRLML9303TRPbF
V
DS
V
GS Max
R
DS(on) max
(@V
GS
= -10V)
-30
± 20
165
270
V
V
m
m
6
*
HEXFET
®
Power MOSFET
'
R
DS(on) max
(@V
GS
= -4.5V)
Micro3
TM
(SOT-23)
IRLML9303TRPbF
Application(s)
System/Load
Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-2.3
-1.8
-12
1.25
0.80
0.01
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
JA
R
JA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
Notes
through
are on page 10
1
03/09/12
IRLML9303TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
2.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-3.7
135
220
–––
–––
–––
–––
–––
21
–––
2.0
0.57
1.2
7.5
14
9.0
8.6
160
39
25
–––
–––
165
270
-2.4
1.0
150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
Conditions
V
GS
= 0V, I
D
= -250μA
V
GS
= -10V, I
D
= -2.3A
V
GS
= -4.5V, I
D
V
DS
= V
GS
, I
D
= -10μA
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
V
DS
= -10V, I
D
=-2.3A
I
D
= -2.3A
V
DS
=-15V
V
DD
V
GS
= -4.5V
I
D
= -1.0A
R
G
= 6.8
V
GS
= -4.5V
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0KHz
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mV/°C Reference to 25°C, I
D
= -1mA
m
V
μA
nA
S
d
= -1.8A
d
d
=-15V
d
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
12
5.3
-1.3
A
-12
-1.2
18
8.0
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
T
J
= 25°C, V
R
= -24V, I
F
=-1.3A
di/dt = 100A/μs
d
d
2
www.irf.com
IRLML9303TRPbF
100
100
60μs PULSE WIDTH
Tj = 25°C
-ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
-ID, Drain-to-Source Current (A)
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
60μs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
1
1
0.1
-2.5V
0.01
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
0.1
-2.5V
0.01
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1.4
ID = -2.3A
VGS = -10V
10
1.2
1
T J = 150°C
T J = 25°C
VDS = -15V
60μs
PULSE WIDTH
1.0
0.8
0.1
1
2
3
4
5
6
7
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
www.irf.com
3
IRLML9303TRPbF
1000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= -2.3A
-V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= -24V
VDS= -15V
C, Capacitance (pF)
Ciss
100
Coss
Crss
VDS= -6.0V
10
1
10
-VDS, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100μsec
1msec
10msec
DC
0.1
T A = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10
100
10
T J = 150°C
T J = 25°C
-I D, Drain-to-Source Current (A)
1.3
-I SD, Reverse Drain Current (A)
1
1
VGS = 0V
0.1
0.3
0.5
0.7
0.9
1.1
-VSD, Source-to-Drain Voltage (V)
0.01
-VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRLML9303TRPbF
2.5
V
DS
V
GS
R
D
2.0
-I D, Drain Current (A)
D.U.T.
1.5
-V
GS
Pulse Width
µs
Duty Factor
1.0
0.5
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
0.0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
V
GS
10%
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
0.01
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
+
-
R
G
V
DD
5
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
