IRLML6401PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= -4.5V)
-12
0.05
10
-4.3
V
Ω
nC
A
S
2
G 1
3 D
Q
g (typical)
I
D
(@T
A
= 25°C)
Micro3™
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Base Part Number
IRLML6401TRPbF-1
Package Type
Micro3
™
(SOT-23)
Form
Tape and Reel
Quantity
3000
Orderable Part Number
IRLML6402TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
°C/W
1
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2014 International Rectifier
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October 28, 2014
IRLML6401PbF-1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-12 ––– –––
V
V
GS
= 0V, I
D
= -250μA
––– -0.007 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.050
V
GS
= -4.5V, I
D
= -4.3A
Ω
––– 0.085
V
GS
= -2.5V, I
D
= -2.5A
––– 0.125
V
GS
= -1.8V, I
D
= -2.0A
-0.40 -0.55 -0.95
V
V
DS
= V
GS
, I
D
= -250μA
8.6 ––– –––
S
V
DS
= -10V, I
D
= -4.3A
––– ––– -1.0
V
DS
= -12V, V
GS
= 0V
μA
––– ––– -25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 55°C
––– ––– -100
V
GS
= -8.0V
nA
––– ––– 100
V
GS
= 8.0V
––– 10
15
I
D
= -4.3A
––– 1.4 2.1
nC V
DS
= -10V
––– 2.6 3.9
V
GS
= -5.0V
––– 11 –––
V
DD
= -6.0V
ns
––– 32 –––
I
D
= -1.0A
––– 250 –––
R
D
= 6.0Ω
––– 210 –––
R
G
= 89Ω
––– 830 –––
V
GS
= 0V
––– 180 –––
pF V
DS
= -10V
––– 125 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
22
8.0
-1.3
A
-34
-1.2
33
12
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.3A
di/dt = -100A/μs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Pulse width
≤
300μs; duty cycle
≤
2%.
Starting T
J
= 25°C, L = 3.5mH
R
G
= 25Ω, I
AS
= -4.3A.
2
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2014 International Rectifier
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October 28, 2014
IRLML6401PbF-1
100
VGS
TOP
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
100
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
TOP
-I D, Drain-to-Source Current (A)
10
-I D, Drain-to-Source Current (A)
10
1
1
-1.0V
-1.0V
0.1
0.1
20μs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
20μs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.0
2.0
-I D , Drain-to-Source Current
(Α
)
T J = 25°C
10.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -4.3A
T J = 150°C
1.5
1.0
1.0
0.5
VDS = -12V
0.1
1.0
1.5
2.0
20μs PULSE WIDTH
2.5
3.0
3.5
4.0
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V GS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
3
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©
2014 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
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October 28, 2014
IRLML6401PbF-1
1200
1000
-V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
10
I
D
=
-4.3A
V
DS
=-10V
C, Capacitance(pF)
800
Ciss
Coss = C + Cgd
ds
8
6
600
4
400
200
Coss
Crss
2
0
1
10
100
0
0
4
8
12
16
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
100
10us
10
100us
1ms
1
10ms
T
J
= 150
°
C
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
-V
SD
,Source-to-Drain Voltage (V)
0.1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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©
2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
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October 28, 2014
IRLML6401PbF-1
5.0
E
AS
, Single Pulse Avalanche Energy (mJ)
80
4.0
-I
D
, Drain Current (A)
60
ID
-1.9A
-3.4A
BOTTOM -4.3A
TOP
3.0
40
2.0
20
1.0
0.0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
0
25
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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©
2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
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