IRLML2246PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= -4.5V)
-20
135
2.9
-2.6
V
mΩ
nC
A
S
2
G 1
3 D
Q
g (typical)
I
D
(@T
A
= 25°C)
Micro3
TM
(SOT-23)
IRLML2246TRPbF-1
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLML2246TRPbF-1
Package Type
Micro3
™
(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML2246TRPbF-1
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-2.6
-2.1
-11
1.3
0.80
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
1
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
IRLML2246PbF-1
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-20
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
3.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.5
90
157
–––
–––
–––
–––
–––
16
–––
2.9
0.52
1.2
5.3
7.7
26
16
220
70
48
–––
–––
135
236
-1.1
-1.0
-150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
Conditions
V
GS
= 0V, I
D
= -250μA
V
GS
= -4.5V, I
D
= -2.6A
V
GS
= -2.5V, I
D
V
DS
= V
GS
, I
D
= -10μA
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= -10V, I
D
= -2.6A
I
D
= -2.6A
V
DS
=-10V
V
DD
V
GS
= -4.5V
I
D
= -1.0A
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mV/°C Reference to 25°C, I
D
= -1mA
mΩ
V
μA
nA
Ω
S
d
= -2.1A
d
d
=-10V
d
R
G
= 6.8Ω
V
GS
= -4.5V
V
GS
= 0V
V
DS
= -16V
ƒ = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
17
6.2
-1.3
A
-11
-1.2
26
9.3
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= -2.6A, V
GS
= 0V
T
J
= 25°C, V
R
= -15V, I
F
=-2.6A
di/dt = 100A/μs
d
d
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board.
Refer to
application note #AN-994.
2
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
IRLML2246PbF-1
100
TOP
VGS
-10V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
100
TOP
VGS
-10V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
1
-1.5V
1
-1.5V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
≤
60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.6
ID = -2.6A
1.4
VGS = -4.5V
-I D, Drain-to-Source Current (A)
10
1.2
1
T J = 150°C
1.0
T J = 25°C
VDS = -15V
≤
60μs PULSE WIDTH
0.8
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-V GS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
3
www.irf.com
©
2014 International Rectifier
Fig 4.
Normalized On-Resistance
vs. Temperature
Submit Datasheet Feedback
October 28, 2014
IRLML2246PbF-1
10000
-V GS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= -2.6A
VDS= -16V
VDS= -10V
C, Capacitance (pF)
1000
Ciss
100
Coss
Crss
VDS= -4.0V
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
10
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1msec
100μsec
10msec
1
T A = 25°C
T J = 150°C
1
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, Source-to-Drain Voltage (V)
Tj = 150°C
Single Pulse
0.1
0.10
1.0
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
©
2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
Submit Datasheet Feedback
October 28, 2014
IRLML2246PbF-1
R
D
V
DS
3.0
2.5
-I D, Drain Current (A)
R
G
V
GS
D.U.T.
2.0
-V
GS
1.5
1.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
0.5
t
d(on)
t
r
t
d(off)
t
f
V
GS
0.0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( Z thJA ) °C/W
100
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
+
-
V
DD
LED专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
