PD - 97439A
IRLML0060TRPbF
HEXFET
®
Power MOSFET
V
DS
V
GS Max
R
DS(on) max
(@V
GS
= 10V)
60
± 16
92
116
V
V
m
m
6
*
'
Micro3
TM
(SOT-23)
IRLML0060TRPbF
R
DS(on) max
(@V
GS
= 4.5V)
Application(s)
Load/
System Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
Benefits
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
60
2.7
2.1
11
1.25
0.80
0.01
± 16
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
JA
R
JA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
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1
03/09/12
IRLML0060TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
60
–––
–––
–––
1.0
–––
–––
–––
–––
–––
7.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.06
98
78
–––
–––
–––
–––
–––
1.6
–––
2.5
0.7
1.3
5.4
6.3
6.8
4.2
290
37
21
–––
–––
116
92
2.5
20
250
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 4.5V, I
D
= 2.2A
V
GS
= 10V, I
D
V
DS
= V
GS
, I
D
= 25μA
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 2.7A
I
D
= 2.7A
V
DS
=30V
V
DD
V
GS
= 4.5V
I
D
= 1.0A
R
G
= 6.8
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V/°C Reference to 25°C, I
D
= 1mA
m
V
μA
nA
S
d
= 2.7A
d
d
= 30V
d
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
14
13
1.6
A
11
1.3
21
20
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.7A, V
GS
= 0V
T
J
= 25°C, V
R
= 30V, I
F
=1.6A
di/dt = 100A/μs
Ã
d
d
2
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IRLML0060TRPbF
100
100
60μs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
6.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
TOP
10
BOTTOM
VGS
10V
6.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
60μs PULSE WIDTH
Tj = 150°C
1
1
2.8V
0.1
0.1
2.8V
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 2.7A
VGS = 10V
ID, Drain-to-Source Current (A)
10
1.5
1
TJ = 150°C
T J = 25°C
1.0
VDS = 25V
60μs
PULSE WIDTH
0.1
2
3
4
5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRLML0060TRPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 2.7A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 48V
VDS= 30V
VDS= 12V
1000
Ciss
Coss
100
Crss
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
7
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100μsec
1msec
1
10msec
10
T J = 150°C
1
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
0.1
T A = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.01
0
Tj = 150°C
Single Pulse
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLML0060TRPbF
3.0
V
DS
2.5
ID, Drain Current (A)
R
D
V
GS
R
G
D.U.T.
+
2.0
1.5
1.0
0.5
V
DS
-
V
DD
V
GS
Pulse Width
µs
Duty Factor
Fig 10a.
Switching Time Test Circuit
0.0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
90%
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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