PD - 95745
DIGITAL AUDIO MOSFET
IRLIB9343PbF
Features
Advanced Process Technology
l
Key Parameters Optimized for Class-D Audio
Amplifier Applications
l
Low R
DSON
for Improved Efficiency
l
Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
l
Low Q
rr
for Better THD and Lower EMI
l
175°C Operating Junction Temperature for
Ruggedness
l
Repetitive Avalanche Capability for Robustness and
Reliability
l
Lead-Free
l
Key Parameters
V
DS
R
DS(ON)
typ. @ V
GS
= -10V
R
DS(ON)
typ. @ V
GS
= -4.5V
Q
g
typ.
T
J
max
D
-55
93
150
31
175
V
m
:
m
:
nC
°C
G
S
TO-220 Full-Pak
Description
This Digital Audio HEXFET
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Max.
-55
±20
-14
-10
-60
33
20
0.26
-40 to + 175
10 (1.1)
Units
V
A
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
W
W/°C
°C
lbf in (N m)
y
y
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
f
Parameter
Typ.
–––
–––
Max.
3.84
65
Units
°C/W
Junction-to-Ambient
f
Notes
through
are on page 7
www.irf.com
1
8/23/04
IRLIB9343PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gs
Q
gd
Q
godr
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
L
D
L
S
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Min.
-55
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
5.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
-52
93
150
–––
-3.7
–––
–––
–––
–––
–––
31
7.1
8.5
15
9.5
24
21
9.5
660
160
72
280
4.5
7.5
–––
–––
105
170
–––
–––
-2.0
-25
-100
100
–––
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
ns
V
Conditions
V
GS
= 0V, I
D
= -250µA
mV/°C Reference to 25°C, I
D
= -1mA
mΩ V
GS
= -10V, I
D
= -3.4A
V
V
GS
= -4.5V, I
D
V
DS
= V
GS
, I
D
= -250µA
e
= -2.7A
e
mV/°C
µA V
DS
= -55V, V
GS
= 0V
nA
S
V
DS
= -55V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
V
DS
= -25V, I
D
= -14A
V
DS
= -44V
V
GS
= -10V
I
D
= -14A
See Fig. 6 and 19
V
DD
= -28V, V
GS
= -10V
I
D
= -14A
R
G
= 2.5Ω
V
GS
= 0V
V
DS
= -50V
ƒ = 1.0MHz,
See Fig.5
V
GS
= 0V, V
DS
= 0V to -44V
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ãe
pF
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Ãg
d
Typ.
Max.
Units
mJ
A
mJ
Repetitive Avalanche Energy
g
Min.
–––
–––
–––
–––
–––
–––
–––
–––
57
120
–––
190
See Fig. 14, 15, 17a, 17b
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ. Max. Units
-14
A
-60
-1.2
86
180
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= -14A, V
GS
= 0V
T
J
= 25°C, I
F
= -14A
di/dt = 100A/µs
e
e
2
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IRLIB9343PbF
100
TOP
VGS
-15V
-12V
-10V
-8.0V
-5.5V
-4.5V
-3.0V
-2.5V
100
TOP
VGS
-15V
-12V
-10V
-8.0V
-5.5V
-4.5V
-3.0V
-2.5V
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
1
1
-2.5V
≤
60µs PULSE WIDTH
Tj = 175°C
-2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
0.1
0.1
1
0.1
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100.0
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current
(Α)
T J = 25°C
TJ = 175°C
10.0
ID = -14A
VGS = -10V
1.5
1.0
1.0
VDS = -25V
≤
60µs PULSE WIDTH
0.1
0.0
5.0
10.0
15.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
-V GS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
20
10000
-V GS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
ID= -14A
16
C, Capacitance (pF)
VDS= -44V
VDS= -28V
VDS= -11V
1000
Ciss
Coss
100
12
8
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 19
10
1
10
100
0
0
10
20
30
40
50
QG Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLIB9343PbF
100.0
1000
-I SD, Reverse Drain Current (A)
T J = 175°C
10.0
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1.0
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
10
1msec
10msec
100
1000
-VSD, Source-to-Drain Voltage (V)
-VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
16
2.5
Fig 8.
Maximum Safe Operating Area
-I D , Drain Current (A)
12
-VGS(th) Gate threshold Voltage (V)
2.0
8
ID = -250µA
1.5
4
0
25
50
75
100
125
150
175
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
0.1
0.02
0.01
Ri (°C/W)
τi
(sec)
τ
C
0.8737 0.000799
τ
0.877
2.089
0.068578
2.593
τ
1
τ
2
τ
3
0.01
Ci=
τi/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRLIB9343PbF
RDS(on), Drain-to -Source On Resistance ( mΩ)
EAS, Single Pulse Avalanche Energy (mJ)
600
1000
ID = -14A
500
ID
800
-5.0A
-5.6A
BOTTOM
-10A
TOP
400
600
300
400
200
T J = 125°C
100
200
0
4.0
6.0
T J = 25°C
8.0
10.0
0
25
50
75
100
125
150
175
-VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
1000
Fig 13.
Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
∆
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
Duty Cycle = Single Pulse
-Avalanche Current (A)
100
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
200
EAR , Avalanche Energy (mJ)
160
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = -10A
120
80
40
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
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