IRLHS2242PbF
HEXFET
®
Power MOSFET
V
DS
V
GS max
R
DS(on) max
(@V
GS
= 4.5V)
-20
±12
31
53
9.6
-8.5
V
V
mΩ
mΩ
nC
A
D 1
T OP VIEW
6 D
D
D
D
R
DS(on) max
(@V
GS
= 2.5V)
G
D 2
S
D
5 D
Q
g typ
I
D
(@T
c(Bottom)
= 25°C)
D
G 3
4 S
D
S
S
i
2mm x 2mm PQFN
Applications
l
l
Charge and Discharge Switch for Battery Application
System/load switch
Features and Benefits
Features
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
results in
⇒
Orderable part number
IRLHS2242TRPbF
IRLHS2242TR2PbF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V (Wirebond Limited)
Pulsed Drain Current
Max.
-20
±12
-7.2
-5.8
-15
Units
V
g
Power Dissipation
g
Power Dissipation
c
hi
-9.8
hi
-8.5
i
-34
2.1
9.6
0.02
-55 to + 150
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 9
1
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2013 International Rectifier
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December 16, 2013
IRLHS2242PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
-20
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.01
25
43
-0.8
-3.8
–––
–––
–––
–––
–––
12
9.6
1.6
3.7
4.3
4.8
6.8
17
7.9
54
54
66
877
273
182
–––
–––
31
53
Conditions
V V
GS
= 0V, I
D
= -250μA
V/°C Reference to 25°C, I
D
= -1mA
mΩ
V
GS
= -4.5V, I
D
= -8.5A
V
GS
= -2.5V, I
D
= -6.8A
e
e
-1.1
V
V
DS
= V
GS
, I
D
= -10μA
––– mV/°C
-1.0
V
DS
= -16V, V
GS
= 0V
μA
-150
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
–––
S V
DS
= -10V, I
D
= -8.5A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nC
Ω
ns
V
DD
= -10V, V
GS
= -4.5V
ID = -8.5A
R
G
= 2.0Ω
V
GS
= 0V
V
DS
= -10V
ƒ = 1.0KHz
Max.
18
-8.5
Units
mJ
A
nC
nC
V
GS
=-10V, V
DS
= -10V, I
D
= -8.5A
V
DS
= -10V
V
GS
= -4.5V
I
D
= -8.5A
V
DS
= 16V, V
GS
= 0V
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
27
20
-8.5
Conditions
MOSFET symbol
D
h
A
V
ns
nC
Ã
-34
-1.2
41
30
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= -8.5A, V
GS
= 0V
e
T
J
= 25°C, I
F
= -8.5A, V
DD
= -10V
di/dt = 200A/μs
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
g
g
Parameter
f
f
Typ.
–––
–––
–––
–––
Max.
13
90
60
42
Units
°C/W
2
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December 16, 2013
IRLHS2242PbF
100
TOP
VGS
-10V
-7.0V
-4.5V
-3.5V
-2.5V
-2.0V
-1.8V
-1.5V
100
TOP
VGS
-10V
-7.0V
-4.5V
-3.5V
-2.5V
-2.0V
-1.8V
-1.5V
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
1
-1.5V
1
-1.5V
≤
60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
≤
60μs
PULSE WIDTH
0.1
0.1
1
Tj = 150°C
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.4
ID = -8.5A
VGS = -4.5V
1.2
-I D, Drain-to-Source Current (A)
10
T J = 150°C
TJ = 25°C
VDS = -10V
≤60μs
PULSE WIDTH
0.1
0
1
2
3
4
5
1.0
1
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14
-V GS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= -8.5A
VDS= -16V
VDS= -10V
VDS= -4V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
1
10
-VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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IRLHS2242PbF
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
100μsec
10
T J = 150°C
10
1msec
10msec
1
TJ = 25°C
1
Limited by
Wirebond
DC
0.1
VGS = 0V
0.1
0.2
0.6
1.0
-VSD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0.10
1
10
100
0.01
-VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
16
Limited By Wirebond
-V GS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
1.5
14
-I D, Drain Current (A)
12
10
8
6
4
2
0
25
50
75
100
125
150
T C , Case Temperature (°C)
1.2
0.9
0.6
ID = -10uA
0.3
ID = -250uA
ID = -1.0mA
ID = -10mA
0.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
100
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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December 16, 2013
IRLHS2242PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
70
80
EAS, Single Pulse Avalanche Energy (mJ)
60
50
40
30
20
10
0
2
4
6
8
ID = -8.5A
70
60
50
40
30
20
10
0
-2.2A
-4.3A
BOTTOM
-8.5A
TOP
ID
T J = 125°C
T J = 25°C
10
12
25
50
75
100
125
150
-VGS, Gate -to -Source Voltage (V)
Starting T J, Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
VDS
L
Fig 13.
Maximum Avalanche Energy vs. Drain Current
I
AS
R
G
-V
GS
-20V
D.U.T
IAS
DRIVER
0.01
Ω
VDD
A
tp
tp
V
(BR)DSS
15V
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
R
D
t
d(on)
t
r
t
d(off)
t
f
D.U.T.
V
GS
10%
+
-V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 15a.
Switching Time Test Circuit
5
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2013 International Rectifier
-
V
DD
90%
V
DS
Fig 15b.
Switching Time Waveforms
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December 16, 2013
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