IRL8114PbF
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Low RDS(on) at 4.5V V
GS
Low Gate Charge
Fully Characterized Capacitance and Avalanche SOA
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
30V
3.5m
4.5m
120A
90A
G
S
I
D (Package Limited)
S
D
G
TO-220AB
IRL8114PbF
G
Gate
Standard Pack
Form
Quantity
Tube
50
D
Drain
S
Source
Base part number
IRL8114PbF
Package Type
TO-220
Orderable Part Number
IRL8114PbF
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Max.
120
85
90
440
115
58
0.77
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
Typ.
–––
0.50
–––
Max.
1.3
–––
62
Units
°C/W
Units
A
W
W/°C
V
°C
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Case-to-Sink, Flat Greased Surface
R
CS
Junction-to-Ambient
R
JA
Notes
through
are
on page 7
1
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March 11, 2015
IRL8114PbF
Min. Typ. Max. Units
Conditions
30
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.017 ––– mV/°C Reference to 25°C, I
D
= 1mA
–––
3.5
4.5
V
GS
= 10V, I
D
= 40A
m
–––
4.6
5.8
V
GS
= 4.5V, I
D
= 32A
1.35 ––– 2.25
V V
DS
= V
GS
, I
D
= 250µA
––– -6.7 –––
––– –––
1.0
V
DS
= 24V, V
GS
= 0V
µA
––– ––– 150
V
DS
= 24V,V
GS
= 0V,T
J
=125°C
––– ––– 100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
173 ––– –––
S V
DS
= 15V, I
D
= 32A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
19
5.0
3.0
6.7
4.3
9.7
15
27
103
29
45
2660
600
300
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
nC
V
DS
= 16V,V
GS
= 0V
V
DD
= 15V
I
D
= 32A
R
G
= 10
V
GS
= 4.5V
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
200
32
mJ
A
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 32A
See Fig. 16
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
22
13
Max. Units
120
A
440
1.0
33
20
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
T
J
= 25°C,I
S
= 32A,V
GS
= 0V
ns T
J
= 25°C, I
F
= 32A , V
DD
= 15V
nC di/dt = 100A/µs
2
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March 11, 2015
1000
TOP
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
IRL8114PbF
1000
TOP
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100
100
3.0V
3.0V
60µs
PULSE WIDTH
10
0.1
Tj = 25°C
1
V DS, Drain-to-Source Voltage (V)
10
60µs
PULSE WIDTH
10
0.1
Tj = 175°C
1
V DS, Drain-to-Source Voltage (V)
10
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 40A
VGS = 10V
1.5
ID, Drain-to-Source Current (A)
100
T J = 175°C
T J = 25°C
10
1.0
VDS = 10V
60µs
PULSE WIDTH
1
1
2
3
4
5
6
7
8
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
12
ID = 32A
VGS, Gate-to-Source Voltage (V)
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage
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1000
IRL8114PbF
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
T J = 175°C
100µsec
100
1msec
LIMITED BY PACKAGE
T J = 25°C
10
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
0.1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
600
EAS , Single Pulse Avalanche Energy (mJ)
2.5
2.0
Id = 250µA
1.5
ID
TOP
9.4A
14A
BOTTOM 32A
400
200
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 9. Threshold Voltage vs. Temperature
RDS(on), Drain-to -Source On Resistance (m
)
Fig 10. Maximum Avalanche Energy Charge vs. Drain Current
140
Limited by package
120
ID, Drain Current (A)
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
ID = 40A
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 11.
Typical On-Resistance vs. Gate Voltage
4
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Fig 12. Maximum Drain Current vs. Case Temperature
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March 11, 2015
10
Thermal Response ( Z thJC ) °C/W
IRL8114PbF
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
0.01
I
AS
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
Fig 15a.
Switching Time Test Circuit
Vds
Fig 15b.
Switching Time Waveforms
Id
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16a.
Gate Charge Test Circuit
5
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Fig 16b.
Gate Charge Waveform
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March 11, 2015
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