StrongIRFET™
IRL7486MTRPbF
Application
Brushed
Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Optimized
for Logic Level Drive
Improved
Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free,
RoHS Compliant
DirectFET
®
N-Channel Power MOSFET
V
DSS
R
DS(on)
typ.
max
@
V
GS
= 10V
R
DS(on)
typ.
max
@ V
GS
= 4.5V
I
D (Silicon Limited)
S
D
G
S
S
S
D
S
S
40V
1.0m
1.25m
1.5m
2.0m
209A
DirectFET
®
ISOMETRIC
ME
Base part number
IRL7486MPbF
Package Type
DirectFET
®
ME
Standard Pack
Form
Tape and Reel
Quantity
4800
Orderable Part Number
IRL7486MTRPbF
RDS(on), Drain-to -Source On Resistance (m
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2
4
6
8
10
12
14
16
18
20
T J = 125°C
T J = 25°C
ID = 123A
ID, Drain Current (A)
220
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Ratings
Symbol
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
I
DM
P
D
@T
C
= 25°C Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
Operating Junction and
T
J
Storage Temperature Range
T
STG
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS (tested)
Avalanche Current
I
AR
E
AR
Repetitive Aval`anche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Case
R
JC
Junction-to-PCB Mounted
R
J-PCB
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
IRL7486MTRPbF
Max.
209
132
836
104
0.83
± 20
-55 to + 150
80
190
111
See Fig.15,16, 23a, 23b
Typ.
–––
12.5
20
–––
0.75
Max.
60
–––
–––
1.2
–––
Units
mJ
A
mJ
Units
A
W
W/°C
V
°C
°C/W
Min. Typ. Max.
40
––– –––
–––
35
–––
––– 1.0 1.25
––– 1.5
2.0
1.0
1.8 2.5
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 0.97 –––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 123A
m
V
GS
= 4.5V, I
D
= 62A
V
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 40V, V
GS
= 0V
µA
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
2
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May 14, 2015
IRL7486MTRPbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
427 ––– –––
S V
DS
= 10V, I
D
= 123A
Q
g
Total Gate Charge
–––
76
111
I
D
= 123A
Q
gs
Gate-to-Source Charge
–––
27
–––
V
DS
= 20V
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
33
–––
V
GS
= 4.5V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
41
–––
I
D
= 123A, V
DS
=0V, V
GS
= 10V
t
d(on)
Turn-On Delay Time
–––
35
–––
V
DD
= 20V
t
r
Rise Time
––– 110 –––
I = 30A
ns
D
t
d(off)
Turn-Off Delay Time
–––
54
–––
R
G
= 2.7
t
f
Fall Time
–––
47
–––
V
GS
= 4.5V
C
iss
Input Capacitance
––– 6904 –––
V
GS
= 0V
C
oss
Output Capacitance
––– 939 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
––– 607 –––
pF ƒ = 1.0MHz
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 1150 –––
V
GS
= 0V, V
DS
= 0V to 32V
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
––– 1376 –––
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.6
43
44
55
56
2.1
104
836
1.2
–––
–––
–––
–––
–––
–––
Min. Typ. Max.
Units
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
=123A, V
GS
= 0V
D
G
S
V/ns
T
J
=150°C,I
S
=123A,
V
DS
= 40V
T
J
= 25° C V
R
= 34V,
ns
T
J
= 125°C I
F
= 123A
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Notes:
Repetitive
rating; pulse width limited by max. junction
temperature.
Limited by T
J
max, starting T
J
= 25°C, L = 0.011mH
R
G
= 50, I
AS
= 123A, V
GS
=10V.
I
SD
≤
123A, di/dt
≤
1056A/µs, V
DD
≤
V(
BR)DSS
, T
J
≤
150°C.
Pulse
width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
oss
eff. (ER) is a fixed capacitance that gives the
C
same energy as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
is measured at T
J
approximately 90°C.
R
This value determined from sample failure population,
starting T
J
= 25°C, L= 0.011mH, R
G
= 50, I
AS
= 123A,
V
GS
=10V.
Limited by T
J
max, starting T
J
= 25°C, L = 1.0mH
R
G
= 50, I
AS
= 20A, V
GS
=10V.
3
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May 14, 2015
1000
TOP
VGS
15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
IRL7486MTRPbF
1000
TOP
VGS
15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
3.0V
3.0V
10
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
ID = 123A
VGS = 10V
ID, Drain-to-Source Current (A)
T J = 150°C
100
T J = 25°C
10
VDS = 10V
60µs PULSE WIDTH
1.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
12
10
8
6
4
2
0
ID= 123A
VDS= 32V
VDS= 20V
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
0
20 40 60 80 100 120 140 160 180 200
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
May 14, 2015
1000
1000
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
IRL7486MTRPbF
100
T J = 150°C
100µsec
100
OPERATION
IN THIS AREA
LIMITED BY R (on)
DS
1msec
10
T J = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
DC
0.1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.9
50
Id = 1.0mA
49
48
Energy (µJ)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
0
5
10
15
20
25
30
35
40
T J , Temperature ( °C )
47
46
45
44
43
42
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.5V
Vgs = 6.0V
Vgs = 8.0V
Vgs = 10V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20 40 60 80 100 120 140 160 180 200
ID , Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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May 14, 2015
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