StrongIRFET™
IRL7472L1TRPbF
Application
Brushed
Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Optimized
for Logic Level Drive
Improved
Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free,
RoHS Compliant
S
S
D
G
S
S
S
S
S
S
D
DirectFET
®
N-Channel Power MOSFET
V
DSS
R
DS(on)
typ.
max
@
V
GS
= 10V
R
DS(on)
typ.
max
@ V
GS
= 4.5V
I
D (Silicon Limited)
40V
0.34m
0.59m
0.52m
0.97m
564A
L8
DirectFET™ ISOMETRIC
Base part number
IRL7472L1PbF
Package Type
Direct FET Large Can (L8)
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRL7472L1TRPbF
)
RDS(on), Drain-to -Source On Resistance (m
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
TJ = 125°C
ID = 195A
600
500
ID, Drain Current (A)
Limited by package
400
300
200
100
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Ratings
Symbol
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
V
GS
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
IRL7472L1TRPbF
Max.
564
399
59
375
1500
341
3.8
0.025
± 20
-55 to + 175
308
765
See Fig.15,16, 23a, 23b
Typ.
–––
12.5
20
–––
1.0
Min. Typ. Max.
40
––– –––
–––
30
–––
––– 0.34 0.59
––– 0.52 0.97
1.0
1.7 2.5
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 1.0 –––
Max.
40
–––
–––
0.44
–––
Units
mJ
A
mJ
A
W
W/°C
V
°C
Units
A
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Case
R
JC
Junction-to-PCB Mounted
R
JA-PCB
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
°C/W
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 5.0mA
V
GS
= 10V, I
D
= 195A
m
V
GS
= 4.5V, I
D
= 98A
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
µA
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
2
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February 25, 2015
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
eff. (ER) Effective Output Capacitance (Energy Related)
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
Min.
232
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
220
95
87
133
68
176
174
137
20082
2436
1594
2855
3544
Max.
–––
330
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IRL7472L1TRPbF
Units
Conditions
S V
DS
= 10V, I
D
= 195A
I
D
= 195A
V
DS
= 20V
nC
V
GS
= 4.5V
I
D
= 195A, V
DS
=0V, V
GS
= 4.5V
V
DD
= 20V
I = 30A
ns
D
R
G
= 2.7
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
pF ƒ = 10kHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
dv/dt
t
rr
Q
rr
I
RRM
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min. Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
57
58
103
114
3.1
Max. Units
Conditions
MOSFET symbol
341
showing the
A
integral reverse
1500
p-n junction diode.
1.2
V T
J
= 25°C, I
S
=195A, V
GS
= 0V
D
G
S
–––
–––
–––
–––
–––
–––
V/ns
T
J
=175°C, I
S
=195A,
V
DS
= 40V
T
J
= 25° C V
R
= 34V,
ns
T
J
= 125°C I
F
= 195A
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Notes:
Package
limit current based on source connection technology
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
J
max, starting T
J
= 25°C, L = 0.016mH, R
G
= 50, I
AS
= 195A, V
GS
=10V.
I
SD
≤
195A, di/dt
≤
984A/µs, V
DD
≤
V(
BR)DSS
, T
J
≤
175°C.
Pulse
width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the
same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
J
max, starting T
J
= 25°C, L = 1.0mH, R
G
= 50, I
AS
= 39A, V
GS
=10V.
Silicon limit current based on maximum allowable junction temperature T
Jmax.
3
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February 25, 2015
10000
TOP
VGS
15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
IRL7472L1TRPbF
10000
TOP
VGS
15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
BOTTOM
1000
BOTTOM
3.0V
100
3.0V
100
10
10
60µs PULSE WIDTH
Tj = 25°C
1
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.01
0.1
60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
10000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
ID = 195A
1.7
VGS = 10V
ID, Drain-to-Source Current(A)
1000
TJ = 175°C
100
TJ = 25°C
1.4
1.1
10
VDS = 10V
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.8
60µs PULSE WIDTH
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 10 KHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
ID= 195A
VDS = 32V
VDS = 20V
12
10
8
6
4
2
0
0
C, Capacitance (pF)
Ciss
10000
Coss
Crss
1000
1
10
VDS , Drain-to-Source Voltage (V)
100
60 120 180 240 300 360 420 480 540 600
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
February 25, 2015
10000
IRL7472L1TRPbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
1000
1000
100µsec
100
TJ = 175°C
TJ = 25°C
100
Limited by Package
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
10
1.0
0.2
0.4
0.6
0.8
1.0
VGS = 0V
0.1
1.2
1.4
1.6
10
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
2.0
50
49
48
47
46
45
44
43
42
41
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
Energy (µJ)
Id = 5.0mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
R DS (on), Drain-to -Source On Resistance (m
)
Fig 12.
Typical C
oss
Stored Energy
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.5V
Vgs = 6.0V
Vgs = 8.0V
Vgs = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2015 International Rectifier
Submit Datasheet Feedback
February 25, 2015
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