TO
-22
0A
B
BYT28 series
Dual rectifier diodes ultrafast
Rev. 5 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
Dual, common cathode, ultrafast, epitaxial rectifier diodes in the SOT78 (TO-220AB)
leaded package.
1.2 Features and benefits
Low forward voltage drop
Soft recovery characteristics
Low thermal resistance.
Fast switching
High thermal cycling performance
1.3 Applications
Output rectifiers in high frequency switched-mode power supplies.
1.4 Quick reference data
V
R
300 V (BYT28-300)
V
R
500 V (BYT28-500)
V
F
1.05 V.
I
O(AV)
10 A
t
rr
60 ns
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
anode 1
cathode
anode 2
mounting base; connected to cathode
2
sym084
Simplified outline
mb
Symbol
1
3
SOT78
1 2 3
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
3. Ordering information
Table 2.
Ordering information
Package
Name
BYT28-300
BYT28-500
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
Parameter
repetitive peak reverse voltage
BYT28-300
BYT28-500
V
R
continuous reverse voltage
BYT28-300
BYT28-500
I
O(AV)
I
FSM
average rectified output current
non-repetitive peak forward current
per diode
storage temperature
junction temperature
Neglecting switching and reverse current losses.
Conditions
Min
-
-
Max
300
500
300
500
10
50
55
+150
150
Unit
V
V
V
V
A
A
A
C
C
T
mb
147
C
T
mb
147
C
both diodes conducting; square
wave;
= 0.5; T
mb
115
C
t = 10 ms
t = 8.3 ms sinusoidal; with reapplied
V
RRM(max)
[1]
-
-
-
-
-
40
-
T
stg
T
j
[1]
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
per diode; see
Figure 1
both diodes conducting
in free air
Min
-
-
-
Typ
-
-
60
Max
4.5
3
-
Unit
K/W
K/W
K/W
BYT28_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
2 of 10
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
10
Z
th(j-mb)
(K/W)
1
001aab919
10
−1
10
−2
P
tot
t
p
δ
=
t
p
T
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
10
t
p
(s)
Fig 1.
Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 5.
Characteristics
T
j
= 25
C; unless otherwise stated.
Symbol
V
F
I
R
Q
S
t
rr
I
RRM
V
fr
Parameter
forward voltage
reverse current
reverse recovery charge
reverse recovery time
repetitive peak reverse current
forward recovery voltage
Conditions
I
F
= 5 A; T
j
= 150
C
I
F
= 10 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100
C
I
F
= 2 A; V
R
30 V;
dI
F
/dt = 20 A/s;
see
Figure 9
I
F
= 1 A; V
R
30 V;
dI
F
/dt = 100 A/s;
see
Figure 6
I
F
= 5 A; V
R
30 V;
dI
F
/dt = 50 A/s;
T
j
= 100
C;
see
Figure 7
I
F
= 1 A; dI
F
/dt = 10 A/s
Min
-
-
-
-
-
-
-
-
Typ
0.95
1.3
2
10
50
50
2
2.5
Max
1.05
1.4
10
200
60
60
3
-
Unit
V
V
A
A
nC
ns
A
V
Characteristics are per diode
BYT28_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
3 of 10
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
I
F
I
F
dl
F
dt
t
rr
time
time
10 %
Q
r
100 %
V
FRM
V
F
001aab911
V
F
I
R
I
RM
time
001aab912
Fig 2.
10
P
F
(W)
8
Reverse recovery definitions
001aab913
Fig 3.
105
T
mb(max)
(°C)
114
118.5
6
P
F
(W)
Forward recovery definitions
001aab914
a = 1.57
1.9
2.2
4
2.8
4
δ
= 1.0
123
T
mb(max)
(°C)
127.5
132
6
0.5
123
127.5
136.5
4
0.1
0.2
I
t
p
δ
=
t
p
T
132
136.5
141
T
t
145.5
150
0
0
1
2
3
4
5
I
F(AV)
(A)
8
I
F(AV)
(A)
2
141
2
V
o
= 0.945 V
R
s
= 0.021
Ω
145.5
0
0
2
4
6
150
Per diode.
I
F(AV)
= I
F(RMS)
.
Per diode.
a = form factor = I
F(RMS)
/ I
F(AV)
.
Fig 4.
Forward power dissipation as a function of
average forward current; maximum values
Fig 5.
Forward power dissipation as a function of
average forward current; maximum values
BYT28_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
4 of 10
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
10
3
t
rr
(ns)
10
2
I
F
= 1 A
001aab915
10
I
RRM
(A)
1
I
F
= 5 A
I
F
= 5 A
001aab916
I
F
= 5 A
I
F
= 1 A
10
10
−1
I
F
= 1 A
T
j
= 25
°C
T
j
= 100
°C
1
1
10
−dI
F
/dt (A/μs)
10
2
10
−2
1
T
j
= 25
°C
T
j
= 100
°C
10
10
2
−dI
F
/dt (A/μs)
Per diode.
Per diode.
Fig 6.
Reverse recovery time as a function of time
differential forward current; maximum values
Fig 7.
Repetitive peak reverse current as a function
of time differential forward current; maximum
values
001aab918
15
I
F
(A)
10
T
j
= 25
°C
T
j
= 150
°C
001aab917
10
3
Q
S
(nC)
10
2
I
F
= 5 A
typ
5
max
10
I
F
= 2 A
0
0
0.5
1
V
F
(V)
1.5
1
1
10
−dI
F
/dt (A/μs)
10
2
Per diode.
T
j
= 25
C.
Fig 8.
Forward current as a function of forward
voltage
Fig 9.
Reverse recovery charge as a function of time
differential forward current; maximum values
7. Package information
Epoxy meets UL94 V0 at
1
⁄
8
inch.
BYT28_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
5 of 10
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