BYQ72EW-200
Dual ultrafast power diode
14 May 2015
Product data sheet
1. General description
Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package.
2. Features and benefits
•
•
•
•
•
•
Very low on-state loss
Fast switching
Soft recovery characteristic minimizes power consuming oscillations
High reverse surge capability
High thermal cycling performance
Low thermal resistance
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5; T
mb
≤ 113 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
I
F
= 15 A; T
j
= 150 °C;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7
-
0.78
0.9
V
Conditions
Min
-
-
Typ
-
-
Max
200
15
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
Dynamic characteristics
reverse recovery time
-
18
25
ns
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TO
-24
7
NXP Semiconductors
BYQ72EW-200
Dual ultrafast power diode
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A1
K
A2
anode 1
cathode
anode 2
Simplified outline
Graphic symbol
A1
K
A2
sym125
1
2
3
TO-247 (SOT429)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYQ72EW-200
TO-247
Description
plastic single-ended through-hole package; heatsink mounted; 1
mounting hole; 3 lead TO-247
Version
SOT429
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYQ72EW-200
Type number
BYQ72EW-200
BYQ72EW-200
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
14 May 2015
2 / 11
NXP Semiconductors
BYQ72EW-200
Dual ultrafast power diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
O(AV)
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
average output current
non-repetitive peak forward
current
DC
δ = 0.5; T
mb
≤ 113 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5; T
mb
≤ 113 °C; square-wave
pulse; both diodes conducting
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
I
RRM
I
RSM
T
stg
T
j
V
ESD
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
δ = 0.001; t
p
= 2 µs; per diode
t
p
= 100 µs; per diode
-
-
-40
-
0.2
0.2
150
150
A
A
°C
°C
-
220
A
-
200
A
-
30
A
Conditions
Min
-
-
-
-
Max
200
200
200
15
Unit
V
V
V
A
Electrostatic discharge
electrostatic discharge voltage
HBM; C = 250 pF; R = 1.5 kΩ
-
8
kV
BYQ72EW-200
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
14 May 2015
3 / 11
NXP Semiconductors
BYQ72EW-200
Dual ultrafast power diode
25
P
tot
(W)
20
0.5
15
0.2
10
0.1
aaa-016846
15
P
tot
(W)
10
4.0
2.8
1.9
aaa-016847
a = 1.57
δ=1
2.2
5
5
0
0
5
10
15
20
25
I
F(AV)
(A)
0
0
5
10
I
F(AV)
(A)
15
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.79 V; R
s
= 0.008 Ω
Fig. 1.
Forward power dissipation as a function of
Fig. 2.
average forward current; square waveform; per
diode; maximum values
20
I
F(AV)
(A)
15
003aal043
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.79 V; R
s
= 0.008 Ω
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
per diode; maximum values
10
4
I
FSM
(A)
10
3
aaa-016849
113 °C
10
10
2
5
t
t
p
T
j(init)
= 25 °C max
I
F
I
FSM
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Average forward current as a function of
mounting base temperature; per diode;
maximum values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
per diode; maximum values
BYQ72EW-200
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
14 May 2015
4 / 11
NXP Semiconductors
BYQ72EW-200
Dual ultrafast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
Z
th(j-mb)
(K/W)
1
Conditions
with heatsink compound; per diode;
Fig. 5
with heatsink compound; both diodes
conducting
in free air
Min
-
-
-
Typ
1.2
0.7
45
Max
2.4
1.4
-
Unit
K/W
K/W
K/W
R
th(j-a)
003aal045
10
-1
δ = 0.5
10
-2
δ = 0.3
δ = 0.1
δ = 0.05
10
-3
δ = 0.02
δ = 0.01
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
1
P
δ=
t
p
T
t
T
t
p
(s)
10
10
-4
10
-6
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse width; per diode;
maximum values
BYQ72EW-200
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
14 May 2015
5 / 11
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