TO
-22
0A
B
BYQ28E-200E
Dual ultrafast power diodes
Rev. 4 — 14 July 2011
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package. These diodes are
rugged with a guaranteed electrostatic discharge voltage capability.
1.2 Features and benefits
Fast switching
Guaranteed ESD capability
High thermal cycling performance
Low on-state losses
Low thermal resistance
Soft recovery minimizes
power-consuming oscillations
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
O(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
119 °C; both diodes
conducting; see
Figure 1;
see
Figure 2
δ
= 0.5 ; t
p
= 25 µs;
T
mb
≤
119 °C; per diode;
square-wave pulse
I
F
= 5 A; T
j
= 150 °C;
see
Figure 4
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs; T
j
= 25 °C;
ramp recovery; see
Figure 5
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
Conditions
Min
-
-
Typ
-
-
Max Unit
200
10
V
A
I
FRM
repetitive peak forward
current
-
-
10
A
Static characteristics
V
F
forward voltage
-
0.8
0.89 V
5
25
ns
Dynamic characteristics
t
rr
reverse recovery time
-
15
Electrostatic discharge
V
ESD
electrostatic discharge
voltage
-
-
8
kV
NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
A1
K
A2
K
anode 1
cathode
anode 2
mounting base; cathode
mb
A1
K
sym125
Simplified outline
Graphic symbol
A2
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYQ28E-200E
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BYQ28E-200E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 14 July 2011
2 of 11
NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
DC
square-wave pulse;
δ
= 0.5 ; T
mb
≤
119 °C;
both diodes conducting; see
Figure 1;
see
Figure 2
δ
= 0.5 ; t
p
= 25 µs; T
mb
≤
119 °C; per diode;
square-wave pulse
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C;
per diode
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C;
per diode
I
RRM
I
RSM
T
stg
T
j
V
ESD
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins
δ
= 0.001 ; t
p
= 2 µs
t
p
= 100 µs
Conditions
Min
-
-
-
-
Max
200
200
200
10
Unit
V
V
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
-
-
-
-40
-
-
10
55
50
0.2
0.2
150
150
8
A
A
A
A
A
°C
°C
kV
Electrostatic discharge
8
P
tot
(W)
6
0.5
001aag976
6
P
tot
(W)
1.9
001aag977
δ
=1
a = 1.57
4
2.8
2.2
4
0.1
0.2
4.0
2
2
0
0
2
4
6
I
F(AV)
(A)
8
0
0
2
4
I
F(AV)
(A)
6
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYQ28E-200E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 14 July 2011
3 of 11
NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode;
see
Figure 3
R
th(j-a)
thermal resistance from junction
to ambient
Min
-
-
-
Typ
-
-
60
Max
3
4.5
-
Unit
K/W
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
001aag979
10
−1
t
p
T
P
δ
=
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYQ28E-200E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 14 July 2011
4 of 11
NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
6. Characteristics
Table 6.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 5 A; T
j
= 25 °C; see
Figure 4
I
F
= 5 A; T
j
= 150 °C; see
Figure 4
I
F
= 10 A; T
j
= 25 °C; see
Figure 4
I
R
reverse current
V
R
= 200 V; T
j
= 25 °C
V
R
= 200 V; T
j
= 100 °C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A; V
R
≥
30 V; dI
F
/dt = 20 A/µs;
T
j
= 25 °C; see
Figure 5
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
ramp recovery; T
j
= 25 °C; see
Figure 5
I
F
= 0.5 A; I
R
= 1 A; step recovery;
T
j
= 25 °C; see
Figure 6
I
RM
V
FR
peak reverse recovery
current
forward recovery voltage
I
F
= 2 A; V
R
≥
30 V; dI
F
/dt = 20 A/µs;
T
j
= 25 °C; see
Figure 5
I
F
= 1 A; dI
F
/dt = 10 A/µs; T
j
= 25 °C;
see
Figure 7
-
-
-
-
-
4
15
10
0.4
1
9
25
20
0.7
-
nC
ns
ns
A
V
Min
-
-
-
-
-
Typ
0.95
0.8
1.1
2
0.1
Max
1.1
0.895
1.25
10
0.2
Unit
V
V
V
µA
mA
Static characteristics
15
I
F
(A)
001aag978
I
F
dl
F
dt
t
rr
10
(1)
(2)
(3)
time
25 %
5
Q
r
100 %
I
R
0
0
0.5
1.0
V
F
(V)
1.5
I
RM
003aac562
Fig 4.
Forward current as a function of forward
voltage
Fig 5.
Reverse recovery definitions; ramp recovery
BYQ28E-200E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 14 July 2011
5 of 11
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