BYC8-600P
3 January 2014
TO
-22
0
AC
Hyperfast power diode
Product data sheet
1. General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching
Low leakage current
Low reverse recovery current
Low thermal resistance
Reduces switching losses in associated MOSFET
3. Applications
•
•
Continuous Current Mode (CCM) Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
mb
≤ 130 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
I
F
= 8 A; T
j
= 125 °C;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
-
1.5
1.9
V
Conditions
Min
-
-
Typ
-
-
Max
600
8
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
Dynamic characteristics
reverse recovery time
-
12
18
ns
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NXP Semiconductors
BYC8-600P
Hyperfast power diode
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; connected to
cathode
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220AC (SOD59)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYC8-600P
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYC8-600P
Type number
BYC8-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
DC
δ = 0.5 ; T
mb
≤ 130 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 130 °C;
square-wave pulse
BYC8-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Conditions
Min
-
-
-
-
-
Max
600
600
600
8
16
Unit
V
V
V
A
A
Product data sheet
3 January 2014
2/9
NXP Semiconductors
BYC8-600P
Hyperfast power diode
Symbol
I
FSM
Parameter
non-repetitive peak forward
current
Conditions
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Min
-
-
-65
-
Max
91
100
175
175
003aaj899
Unit
A
A
°C
°C
T
stg
T
j
24
P
tot
(W)
16
storage temperature
junction temperature
003aaj898
δ=1
0.5
20
P
tot
(W)
16
2.2
2.8
4.0
8
a = 1.57
1.9
0.2
0.1
12
8
4
0
0
4
8
I
F(AV)
(A)
12
0
0
2
4
6
I
F(AV)
(A)
8
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
12
I
F(AV)
(A)
8
003aaj900
10
4
I
FSM
(A)
10
3
P
003aaj902
130 °C
t
p
t
4
10
2
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Average forward current as a function of
mounting base temperature; maximum values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; square waveform;
maximum values
© NXP N.V. 2014. All rights reserved
BYC8-600P
All information provided in this document is subject to legal disclaimers.
Product data sheet
3 January 2014
3/9
NXP Semiconductors
BYC8-600P
Hyperfast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
10
Z
th(j-mb)
(K/W)
1
Conditions
Fig. 5
Min
-
Typ
-
Max
2.5
Unit
K/W
R
th(j-a)
in free air
-
60
-
K/W
001aag913
10
- 1
P
δ=
t
p
T
10
- 2
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
t
T
1
10
t
p
(s)
10
- 1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse width
10. Characteristics
Table 7.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 8 A; T
j
= 25 °C;
Fig. 6
I
F
= 8 A; T
j
= 125 °C;
Fig. 6
I
F
= 8 A; T
j
= 150 °C
I
R
reverse current
V
R
= 600 V; T
j
= 25 °C
V
R
= 600 V; T
j
= 125 °C
Dynamic characteristics
Q
r
recovered charge
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 125 °C;
Fig. 7
t
rr
reverse recovery time
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C;
Fig. 7
BYC8-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Min
-
-
-
-
-
Typ
-
1.5
1.4
-
-
Max
3.4
1.9
-
20
200
Unit
V
V
V
µA
µA
Static characteristics
-
-
-
17
90
19
-
-
-
nC
nC
ns
Product data sheet
3 January 2014
4/9
NXP Semiconductors
BYC8-600P
Hyperfast power diode
Symbol
Parameter
Conditions
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
Typ
12
-
-
Max
18
2.2
6
Unit
ns
A
A
I
RM
peak reverse recovery
current
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 125 °C;
Fig. 7
16
I
F
(A)
12
003aaj903
I
F
dl
F
dt
t
rr
8
(1)
(2)
(3)
time
25 %
Q
r
100 %
4
I
R
0
0
1
2
3
4
I
RM
003aac562
V
F
(V)
Fig. 7.
Reverse recovery definitions; ramp recovery
Fig. 6.
Forward current as a function of forward
voltage
BYC8-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
5/9
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