BYV74W-400
16 July 2013
TO
-24
7
Dual ultrafast power diode
Product data sheet
1. General description
Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package.
2. Features and benefits
•
•
•
•
•
Very low on-state loss
Fast switching
Soft recovery characteristic minimizes power consuming oscillations
High thermal cycling performance
Low thermal resistance
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
I
O(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
mb
≤ 104 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
-
-
30
A
pulse; both diodes conducting
Static characteristics
V
F
t
rr
forward voltage
I
F
= 15 A; T
j
= 150 °C;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7
-
0.95
1.12
V
Dynamic characteristics
reverse recovery time
-
35
60
ns
Conditions
Min
-
-
Typ
-
-
Max
400
15
Unit
V
A
average output current δ = 0.5 ; T
mb
≤ 94 °C; square-wave
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NXP Semiconductors
BYV74W-400
Dual ultrafast power diode
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
A1
K
A2
K
anode 1
cathode
anode 2
mounting base; cathode
Simplified outline
Graphic symbol
A1
K
A2
sym125
1
2
3
TO-247 (SOT429)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYV74W-400
TO-247
Description
plastic single-ended through-hole package; heatsink mounted; 1
mounting hole; 3 lead TO-247
Version
SOT429
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYV74W-400
Type number
BYV74W-400
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
O(AV)
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
average output current
T
mb
≤ 136 °C; DC
δ = 0.5 ; T
mb
≤ 104 °C; square-wave
pulse; per diode;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; T
mb
≤ 94 °C; square-wave
pulse; both diodes conducting
-
30
A
Conditions
Min
-
-
-
-
Max
400
400
400
15
Unit
V
V
V
A
BYV74W-400
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
16 July 2013
2 / 10
NXP Semiconductors
BYV74W-400
Dual ultrafast power diode
Symbol
I
FSM
Parameter
non-repetitive peak forward
current
Conditions
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode;
Fig. 4
Min
-
-
-40
-
Max
170
185
150
150
003aal048
Unit
A
A
°C
°C
T
stg
T
j
30
P
tot
(W)
20
storage temperature
junction temperature
003aal047
20
P
tot
(W)
15
2.2
2.8
10
4.0
δ=1
a = 1.57
1.9
0.5
0.2
0.1
10
5
0
0
5
10
15
20
25
I
F(AV)
(A)
0
0
5
10
I
F(AV)
(A)
15
Fig. 1.
Forward power dissipation as a function of
Fig. 2.
average forward current; square waveform; per
diode; maximum values
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
per diode; maximum values
20
I
F(AV)
(A)
15
104 °C
003aal049
10
4
I
FSM
(A)
10
3
003aal050
10
10
2
5
t
t
p
T
j(init)
= 25 °C max
I
F
I
FSM
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Average forward current as a function of
mounting base temperature; per diode;
maximum values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
per diode; maximum values
© NXP N.V. 2013. All rights reserved
BYV74W-400
All information provided in this document is subject to legal disclaimers.
Product data sheet
16 July 2013
3 / 10
NXP Semiconductors
BYV74W-400
Dual ultrafast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
Z
th(j-mb)
(K/W)
1
Conditions
with heatsink compound; per diode;
Fig. 5
with heatsink compound; both diodes
conducting
in free air
Min
-
-
-
Typ
-
-
45
Max
2.4
1.4
-
Unit
K/W
K/W
K/W
R
th(j-a)
003aal045
10
-1
δ = 0.5
10
-2
δ = 0.3
δ = 0.1
δ = 0.05
10
-3
δ = 0.02
δ = 0.01
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
1
P
δ=
t
p
T
t
T
t
p
(s)
10
10
-4
10
-6
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse width; per diode;
maximum values
10. Characteristics
Table 7.
Characteristics
characteristics are per diode unless otherwise stated
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 15 A; T
j
= 25 °C;
Fig. 6
I
F
= 30 A; T
j
= 25 °C;
Fig. 6
I
F
= 15 A; T
j
= 150 °C;
Fig. 6
I
R
reverse current
V
R
= 400 V; T
j
= 25 °C
V
R
= 400 V; T
j
= 100 °C
Min
-
-
-
-
-
Typ
1.08
1.15
0.95
10
0.3
Max
1.25
1.36
1.12
50
0.8
Unit
V
V
V
µA
mA
Static characteristics
BYV74W-400
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
16 July 2013
4 / 10
NXP Semiconductors
BYV74W-400
Dual ultrafast power diode
Symbol
Q
r
t
rr
I
RM
V
FRM
Parameter
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
Conditions
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 100 °C;
Fig. 7
I
F
= 10 A; dI
F
/dt = 10 A/µs; T
j
= 25 °C;
Fig. 8
003aal051
Min
-
-
-
-
Typ
40
35
4.2
2.5
Max
60
60
5.2
-
Unit
nC
ns
A
V
Dynamic characteristics
30
I
F
(A)
20
(1)
(2)
I
F
dl
F
dt
t
rr
(3)
time
25 %
10
Q
r
100 %
I
R
0
0
0.5
1
1.5
I
RM
003aac562
V
F
(V)
Fig. 7.
Reverse recovery definitions; ramp recovery
Fig. 6.
Forward current as a function of forward
voltage; per diode
BYV74W-400
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
16 July 2013
5 / 10
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