BYV34G-600
Dual rectifier diode, ultrafast
Rev. 01 — 25 February 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT226 (I2PAK), low-profile
plastic package.
1.2 Features
I
Fast switching
I
Soft recovery characteristic
I
Low switching loss
I
Low thermal resistance
I
High thermal cycling performance
I
Low forward voltage drop
1.3 Applications
I
Output rectifiers in high frequency
switched-mode power supplies
I
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
1.4 Quick reference data
I
V
RRM
≤
600 V
I
V
F
≤
1.16 V
I
I
O(AV)
≤
20 A
I
t
rr
≤
60 ns
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
anode 1
cathode
anode 2
mounting base; cathode
mb
1
2
sym084
Simplified outline
Graphic symbol
3
1 2 3
SOT226 (I2PAK)
NXP Semiconductors
BYV34G-600
Dual rectifier diode, ultrafast
3. Ordering information
Table 2.
Ordering information
Name
BYV34G-600
I2PAK
Description
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
Version
SOT226
Type number Package
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
T
stg
T
j
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
DC; T
mb
≤
138
°C
square waveform;
δ
= 0.5; T
mb
≤
107
°C;
both
diodes conducting
t
p
= 25
µs
square waveform;
δ
= 0.5;
T
mb
≤
107
°C;
per diode
t
p
= 10 ms; sinusoidal waveform; per diode
t
p
= 8.3 ms; sinusoidal waveform; per diode
Conditions
Min
-
-
-
-
-
-
-
−40
-
Max
600
600
600
20
20
120
132
+150
150
Unit
V
V
V
A
A
A
A
°C
°C
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
2 of 9
NXP Semiconductors
BYV34G-600
Dual rectifier diode, ultrafast
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
with heatsink compound
per diode; see
Figure 1
with heatsink compound;
both diodes conducting
R
th(j-a)
thermal resistance from junction to ambient in free air
Min
-
-
-
Typ
-
-
60
Max
2.4
1.6
-
Unit
K/W
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
001aag912
10
−1
P
δ
=
t
p
T
10
−2
t
p
T
t
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 1.
Transient thermal impedance from junction to mounting base per diode as a function of pulse width
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
3 of 9
NXP Semiconductors
BYV34G-600
Dual rectifier diode, ultrafast
6. Characteristics
Table 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
Conditions
I
F
= 10 A; T
j
= 150
°C;
see
Figure 2
I
F
= 20 A
V
R
= 600 V
V
R
= 600 V; T
j
= 100
°C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A to V
R
= 30 V; dI
F
/dt = 20 A/µs;
see
Figure 3
I
F
= 1 A to V
R
= 30 V;
dI
F
/dt = 100 A/µs; ramp recovery;
see
Figure 3
I
F
= 10 A to V
R
= 30 V;
dI
F
/dt = 50 A/µs; T
j
= 100
°C;
see
Figure 3
I
F
= 10 A; dI
F
/dt = 10 A/µs;
see
Figure 4
-
-
40
50
70
60
nC
ns
Min
-
-
-
-
Typ
0.92
1.07
10
0.2
Max
1.16
1.48
50
0.6
Unit
V
V
µA
mA
Static characteristics
I
RM
peak reverse recovery
current
forward recovery
voltage
-
3
5
A
V
FR
-
3.2
-
V
30
I
F
(A)
25
003aab485
20
15
10
(1)
(2)
(3)
5
0
0
0.4
0.8
1.2
V
F
(V)
1.6
(1) T
j
= 150
°C;
typical values
(2) T
j
= 150
°C;
maximum values
(3) T
j
= 25
°C;
maximum values
Fig 2.
Forward current as a function of forward voltage
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
4 of 9
NXP Semiconductors
BYV34G-600
Dual rectifier diode, ultrafast
I
F
I
F
dl
F
dt
t
rr
time
time
25 %
Q
r
100 %
V
F
I
R
I
RM
003aac562
V
F
V
FRM
time
001aab912
Fig 3.
Reverse recovery definitions
Fig 4.
Forward recovery definitions
18
P
tot
(W)
15
0.5
12
0.2
9
0.1
6
003aab483
12
P
tot
(W)
10
2.2
8
4.0
6
2.8
1.9
003aab484
δ
=1
a = 1.57
4
3
2
0
0
5
10
I
F(AV)
(A)
15
0
0
3
6
I
F(AV)
(A)
9
I
F(AV)
= I
F(RMS)
× √δ
a = form factor = I
F(RMS)
/ I
F(AV)
Fig 5.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV34G-600_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 February 2009
5 of 9
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