CYStech Electronics Corp.
60V N-Channel Enhancement Mode MOSFET
Spec. No. : C109N3
Issued Date : 2015.07.31
Revised Date :
Page No. : 1/9
MTN2310AN3
Features
•
Simple drive requirement
•
Small package outline
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
A
=25°C
R
DSON
@V
GS
=10V, I
D
=4A
R
DSON
@V
GS
=5V, I
D
=3A
60V
4.2A
33.7mΩ(typ)
43.1mΩ(typ)
Symbol
MTN2310AN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTN2310AN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2310AN3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Spec. No. : C109N3
Issued Date : 2015.07.31
Revised Date :
Page No. : 2/9
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
(Note 3)
Continuous Drain Current @ T
A
=70°C, V
GS
=10V
(Note 3)
Pulsed Drain Current
(Notes 1, 2)
Maximum Power Dissipation@ T
A
=25℃
(Note 3)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Tj ; Tstg
Limits
60
±20
4.2
3.4
16
1.38
0.01
-55~+150
Unit
V
A
W
W/°C
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270
°C/W
when mounted on minimum copper pad
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
(Note)
Symbol
R
θJA
R
θJC
Limit
90
60
Unit
°C/W
Note :
Surface mounted on 1 in² copper pad of FR-4 board; 270
°C/W
when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
t
d(ON)
t
r
t
d(OFF)
t
f
MTN2310AN3
Min.
60
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
33.7
43.1
6.8
366
49
37
6.2
17.4
20.8
16.8
Max.
-
2.5
±
100
1
25
42
54
-
-
-
-
-
-
-
-
Unit
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±
20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V(Tj=70
°C)
I
D
=4A, V
GS
=10V
I
D
=3A, V
GS
=5V
V
DS
=5V, I
D
=4A
pF
V
DS
=30V, V
GS
=0V, f=1MHz
ns
V
DS
=30V, I
D
=1A, V
GS
=10V, R
G
=6
Ω
CYStek Product Specification
CYStech Electronics Corp.
Qg
Qgs
Qgd
Rg
Source-Drain Diode
*I
S
*I
SM
*V
SD
Trr
Qrr
-
-
-
-
-
-
-
-
-
9.9
1.7
3.1
1.6
-
-
-
9.8
5.9
-
-
-
-
4
16
1.3
-
-
nC
Ω
A
V
ns
nC
V
GS
=0V, I
F
=I
S
Spec. No. : C109N3
Issued Date : 2015.07.31
Revised Date :
Page No. : 3/9
V
DS
=30V, I
D
=4A, V
GS
=10V
f=1MHz
V
GS
=0V, I
F
=4A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended Soldering Footprint
MTN2310AN3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
16
5V
10V, 9V, 8V, 7V,6V
4.5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C109N3
Issued Date : 2015.07.31
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0
2
4
6
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
I
D
=250μA,
V
GS
=0V
14
I
D
, Drain Current (A)
12
10
8
6
4
2
0
4V
V
GS
=3V
3.5V
8
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=3V
1
0.8
0.6
0.4
0.2
Tj=25°C
V
GS
=4.5V
100
Tj=150°C
V
GS
=5V
V
GS
=10V
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
400
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
360
320
280
240
200
160
120
80
40
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
I
D
=4A
V
GS
=5V, I
D
=3A
R
DSON
@Tj=25°C : 43.1mΩ typ.
1.6
1.2
0.8
V
GS
=10V, I
D
=4A
R
DSON
@Tj=25°C : 33.7mΩ typ.
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN2310AN3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C109N3
Issued Date : 2015.07.31
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
1
0.8
0.6
0.4
I
D
=250μA
1000
I
D
=1mA
Capacitance---(pF)
100
C
oss
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
100
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=15V
G
FS
, Forward Transfer Admittance(S)
V
GS
, Gate-Source Voltage(V)
8
V
DS
=30V
6
4
2
I
D
=4A
1
V
DS
=5V
Pulsed
Ta=25°C
V
DS
=48V
0.1
0.01
0.1
1
I
D
, Drain Current(A)
10
0
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Safe Operating Area
100
5
4.5
Maximum Drain Current vs Junction Temperature
I
D
, Maximum Drain Current(A)
I
D
, Drain Current (A)
10
R
DSON
Limite
100
μ
s
4
3.5
3
2.5
2
1.5
1
0.5
0
25
T
A
=25°C
V
GS
=10V
R
θJA
=90°C/W
1ms
1
10ms
0.1
T
A
=25°C, Tj=150°C
V
GS
=10V, R
θJA
=90°C/W
Single Pulse
100ms
DC
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
50
75
100
125
150
175
T
j
, Junction Temperature(°C)
MTN2310AN3
CYStek Product Specification
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