CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C976F3
Issued Date : 2014.10.02
Revised Date : 2015.09.04
Page No. : 1/9
MTE55N20F3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
V
GS
=10V, I
D
=11A
R
DSON(TYP)
V
GS
=7V, I
D
=5A
200V
34A
46.5mΩ
50mΩ
Symbol
MTE55N20F3
Outline
TO-263
G：Gate
S：Source
D：Drain
G
D S
Ordering Information
Device
MTE55N20F3-0-T7-X
Package
Shipping
TO-263
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE55N20F3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C976F3
Issued Date : 2014.10.02
Revised Date : 2015.09.04
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V
Continuous Drain Current @ T
C
=100°C, V
GS
=10V
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
Continuous Drain Current @ T
A
=70°C, V
GS
=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1.6mH, I
D
=11A, R
G
=25Ω
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation @T
C
=25℃
Power Dissipation @T
C
=100℃
Power Dissipation @T
A
=25℃
Power Dissipation @T
A
=70℃
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
200
±20
34
24
3.5
2.8
102
11
96.8
4.6
187
93.5
2
1.3
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
th,j-c
R
th,j-a
Value
0.8
62
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4.
The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
5
.
The R
θJA
is the sum of thermal resistance from junction to case R
θJC
and case to ambient.
MTE55N20F3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
ΔBV
DSS
/ΔTj
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
Spec. No. : C976F3
Issued Date : 2014.10.02
Revised Date : 2015.09.04
Page No. : 3/9
Min.
200
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.18
-
-
-
-
46.5
50
14.9
100
11.3
19.5
27.8
93.2
107.2
95.2
2914
215
136
1.2
-
-
0.82
78
320
Max.
-
-
4
±
100
1
25
60
70
-
-
-
-
-
-
-
-
-
-
-
-
34
102
1.3
-
-
Unit
V
V/
°
C
V
nA
μA
m
Ω
S
nC
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±
20V, V
DS
=0V
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V, T
J
=125°C
V
GS
=10V, I
D
=11A
V
GS
=7V, I
D
=5A
V
DS
=15V, I
D
=11A
V
DS
=160V, I
D
=20A, V
GS
=10V
V
DS
=100V, I
D
=20A, V
GS
=10V,
R
G
=25
Ω
G
FS
*1
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
F
=20A, V
GS
=0V
I
F
=20A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTE55N20F3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
80
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C976F3
Issued Date : 2014.10.02
Revised Date : 2015.09.04
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
70
I
D
, Drain Current (A)
60
50
40
30
20
10
0
0
10V
9V
8V
7V
6V
1.2
1
0.8
0.6
0.4
V
GS
=5.5V
V
GS
=5V
V
GS
=4.5V
I
D
=250
μ
A,
V
GS
=0V
4
8
12
16
V
DS
, Drain-Source Voltage(V)
20
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
0.8
0.6
0.4
0.2
100
V
GS
=4.5V
Tj=150°C
V
GS
=5V
V
GS
=10V
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
I
D
=11A
3.2
2.8
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
V
GS
=10V, I
D
=11A
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
160
120
80
40
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
2
1.6
1.2
0.8
0.4
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
R
DS(ON)
@Tj=25°C : 46.5mΩ typ.
MTE55N20F3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
Spec. No. : C976F3
Issued Date : 2014.10.02
Revised Date : 2015.09.04
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
I
D
=1mA
1000
C
oss
1
0.8
0.6
0.4
0.2
I
D
=250μA
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
100
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=160V
10
V
GS
, Gate-Source Voltage(V)
8
6
V
DS
=100V
1
V
DS
=15V
4
2
0.1
Ta=25°C
Pulsed
I
D
=20A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
10
20
30
40
50
60
Qg, Total Gate Charge(nC)
\
Maximum Safe Operating Area
1000
Maximum Drain Current vs Case Temperature
40
I
D
, Maximum Drain Current(A)
R
DSON
Limited
100
35
30
25
20
15
10
5
0
25
V
GS
=10V, R
θ
JC
=0.8°C/W
I
D
, Drain Current(A)
10
μ
s
100
μ
s
10
1ms
10ms
100ms
DC
T
C
=25°C, Tj=175°C
V
GS
=10V,
θ
JC
=0.8°C/W
Single Pulse
1
0.1
0.01
0.1
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
50
75
100
125
150
T
C
, Case Temperature(°C)
175
200
MTE55N20F3
CYStek Product Specification
微控制器 MCU
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