CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C165J3
Issued Date : 2015.06.11
Revised Date :
MTE115P10KJ3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
ESD Protected Gate
•
Pb-free Lead Plating & Halogen-free Package
BV
DSS
I
D
@V
GS
=-10V, T
C
=25°C
R
DS(ON)
@V
GS
=-10V, I
D
=-10A
R
DS(ON)
@V
GS
=-6V, I
D
=-10A
-100V
-14A
101mΩ(typ)
120mΩ(typ)
Equivalent Circuit
MTE115P10KJ3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTE115P10KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE115P10KJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C165J3
Issued Date : 2015.06.11
Revised Date :
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=175°C, T
C
=25°C, V
GS
=-10V
(Note 1)
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
-100
±20
-14
-9.9
-3.3
-2.6
-56
-14
68
50
25
2.5
1.6
-55~+175
V
Continuous Drain Current @ T
J
=175°C,T
C
=100°C, V
GS
=-10V
(Note 1)
Continuous Drain Current @T
A
=25°C, V
GS
=-10V
Continuous Drain Current @T
A
=70°C, V
GS
=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.7mH, I
D
=-14A, R
G
=25Ω
T
C
=25°C
T
C
=100°C
Total Power Dissipation
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature Range
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 2)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t≤10s
(Note 2)
Thermal Resistance, Junction-to-ambient, steady state
Symbol
R
θJC
R
θJA
Typical
2.7
15
40
Maximum
3
18
50
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency and low duty
cycles to keep initial T
J
=25
°
C.
MTE115P10KJ3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
*1
*1
Spec. No. : C165J3
Issued Date : 2015.06.11
Revised Date :
Min.
-100
-2
-
-
-
-14
-
-
-
Typ.
-
-
-
-
-
-
101
120
14
Max.
-
-4
±
10
-1
-25
-
135
156
-
Unit
V
μA
A
m
Ω
S
nC
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=
±
20V, V
DS
=0V
V
DS
=-80V, V
GS
=0V
V
DS
=-80V, V
GS
=0V, T
J
=125°C
V
DS
=-5V, V
GS
=-10V
V
GS
=-10V, I
D
=-10A
V
GS
=-6V, I
D
=-10A
V
DS
=-5V, I
D
=-10A
I
D
=-7A, V
DS
=-80V, V
GS
=-10V
V
DS
=-20V, I
D
=-1A, V
GS
=-10V,
R
G
=6
Ω
G
FS
*1
Dynamic
Qg
*1, 2
-
18.6
27.9
Qgs
*1, 2
-
4.6
-
Qgd
*1, 2
-
6.1
-
t
d(ON)
*1, 2
-
10.8
16.2
tr
-
16.2
24.3
*1, 2
t
d(OFF)
*1, 2
-
72
108
t
f
*1, 2
-
64
96
Ciss
-
1002
-
Coss
-
117
-
Crss
-
46
-
Rg
-
12
-
Source-Drain Diode Ratings and Characteristics
I
S
*1
-
-
-14
I
SM
*1
-
-
-56
V
SD
*1
-
-0.86
-1.2
trr
-
27.9
41.8
Qrr
-
39
-
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=-25V, f=1MHz
V
DS
=0V, f=1MHz
I
S
=-10A, V
GS
=0V
I
F
=-10A, dI
F
/dt=100A/μs
Recommended soldering footprint
MTE115P10KJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
50
45
-I
D
, Drain Current(A)
40
35
30
25
20
15
10
5
0
0
2
4
6
8 10 12 14 16
-V
DS
, Drain-Source Voltage(V)
18
20
7V
6.5
V
6
V
5.5V
-V
GS
=5V
-V
GS
=4.5V
0.4
8V
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V
9V
1.4
Spec. No. : C165J3
Issued Date : 2015.06.11
Revised Date :
Brekdown Voltage vs Ambient Temperature
1.2
1
0.8
0.6
I
D
=-250μA,
V
GS
=0V
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
V
GS
=0V
500
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
450
400
350
300
250
200
150
100
50
0
0.01
0.1
1
10
-I
D
, Drain Current(A)
100
V
GS
=-4.5V
V
GS
=-6V
-10V
1
Tj=25°C
0.8
0.6
0.4
0.2
0
2
4
6
8
-I
DR
, Reverse Drain Current(A)
10
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
500
R
DS(ON
), Static Drain-Source On-
State Resistance(mΩ)
450
400
350
300
250
200
150
100
50
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
I
D
=-10A
2.4
2
1.6
1.2
0.8
0.4
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
R
DS(ON)
@Tj=25°C : 101mΩ typ
V
GS
=-10V, I
D
=-10A
MTE115P10KJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
Spec. No. : C165J3
Issued Date : 2015.06.11
Revised Date :
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
I
D
=-1mA
1000
1
0.8
0.6
I
D
=-250μA
C
oss
100
f=1MHz
Crss
0.4
0.2
10
0
10
20
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
1ms
10ms
100ms
1s
DC
Gate Charge Characteristics
10
-V
GS
, Gate-Source Voltage(V)
-I
D
, Drain Current (A)
10
R
DS(ON)
Limited
100μ
s
V
DS
=-20V
8
V
DS
=-50V
6
4
2
I
D
=-7A
V
DS
=-80V
1
0.1
T
C
=25°C, Tj=175°C,
V
GS
=-10V, R
θ
JC
=3°C/W,
single pulse
0.01
0.1
1
10
100
-V
DS
, Drain-Source Voltage(V)
1000
0
0
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
Maximum Drain Current vs Case Temperature
G
FS
, Forward Transfer Admittance(S)
Forward Transfer Admittance vs Drain Current
100
16
-I
D
, Maximum Drain Current(A)
14
12
10
8
6
4
2
0
25
50
75
100 125
150
T
C
, Case Temperature(°C)
175
200
V
GS
=-10V, Tj(max)=175°C,
R
θ
JC
=3°C/W, single pulse
10
1
V
DS
=-10V
Pulsed
Ta=25°C
0.1
0.01
0.001
0.01
0.1
1
-I
D
, Drain Current(A)
10
100
MTE115P10KJ3
CYStek Product Specification
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