CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 1/ 8
MTD07N04I3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=20A
R
DS(ON)
@V
GS
=4.5V, I
D
=10A
40V
50A
6.3 mΩ(typ)
8.4 mΩ(typ)
Symbol
MTD07N04I3
Outline
TO-251
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
MTD07N04I3-0-UA-G
Package
TO-251
(Pb-free lead plating and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTD07N04I3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V(silicon limit)
(Note 1)
Continuous Drain Current @T
C
=100°C, V
GS
=10V(silicon limit)
(Note 1)
Continuous Drain Current @T
C
=25°C, V
GS
=10V(package limit)
(Note 1)
Continuous Drain Current @T
A
=25°C, V
GS
=10V
(Note 2)
Continuous Drain Current @T
A
=70°C, V
GS
=10V
(Note 2)
Pulsed Drain Current @ V
GS
=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.5mH, I
D
=18A, V
DD
=25V
T
C
=25°C
T
C
=100°C
Power Dissipation
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 2/ 8
Symbol
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
Limits
40
±20
63
40
50
13.5
10.8
200
18
81
54
21
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
2.3
50
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C.
3
.
Pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and low duty cycles
to keep initial T
J
=25
°
C.
MTD07N04I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
*R
DS(ON)
Min.
40
-
1.5
-
-
-
-
-
-
Typ.
-
0.03
-
22
-
-
-
6.3
8.4
31
15.7
6
7
14.6
18.8
43.4
8
1517
188
116
1.6
-
0.86
14
8.6
Max.
-
-
2.5
-
±
100
1
10
7.6
10
46.5
-
-
-
-
-
-
-
-
-
-
-
50
1.1
-
-
Unit
V
V/°C
V
S
nA
μA
m
Ω
Test Conditions
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 3/ 8
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=10A
V
GS
=
±
20V
V
DS
=32V, V
GS
=0V
V
DS
=32V, V
GS
=0V, Tj=85°C
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=10A
Dynamic
*Qg(V
GS
=10V)
-
*Qg(V
GS
=4.5V)
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*V
SD
-
*trr
-
*Qrr
-
nC
V
DD
=20V, I
D
=20A,V
GS
=10V
ns
V
DD
=20V, I
D
=1A, V
GS
=10V, R
G
=1
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=20V, f=1MHz
f=1MHz
I
S
=20A, V
GS
=0V
V
GS
=0, I
F
=20A, dI
F
/dt=360A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTD07N04I3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
180
150
I
D
, Drain Current (A)
120
90
V
GS
=5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V
V
GS
=6V
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 4/ 8
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
60
V
GS
=4.5V
30
V
GS
=4V
I
D
=250
μ
A,
V
GS
=0V
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1.0
Tj=25°C
V
GS
=4.5V
0.8
0.6
0.4
0.2
10
V
GS
=10V
Tj=150°C
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
70
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
2.4
I
D
=20A
60
50
40
30
20
10
0
0
2
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
=10V, I
D
=20A
R
DS(ON)
@Tj=25°C : 6.3mΩ typ.
V
GS
=4.5V, I
D
=10A
R
DS(ON)
@Tj=25°C : 8.4mΩtyp.
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD07N04I3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
Ciss
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 5/ 8
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
I
D
=1mA
Capacitance---(pF)
1000
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
100
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
V
GS
, Gate-Source Voltage(V)
8
6
1
V
DS
=5V
4
2
V
DS
=20V
I
D
=20A
0.1
Ta=25°C
Pulsed
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
4
8
12
16
20
24
Qg, Total Gate Charge(nC)
28
32
Maximum Safe Operating Area
1000
100
μ
s
1ms
10ms
100ms
1s
1
T
C
=25°C, Tj=150°C
V
GS
=10V, R
θ
JC
=2.3°C/W
Single Pulse
DC
Maximum Drain Current vs Case Temperature
70
I
D
, Maximum Drain Current(A)
I
D
, Drain Current(A)
100
R
DSON
Limited
60
50
40
30
20
10
0
Package Limit
Silicon Limit
10
V
GS
=10V, R
θ
JC
=2.3°C/W
0.1
0.1
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTD07N04I3
CYStek Product Specification
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