CYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET
Spec. No. : C995H8
Issued Date : 2015.07.23
Revised Date :
Page No. : 1/13
MTC7540DH8
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=4.5V(-4.5V), T
A
=25°C
I
D
@V
GS
=4.5V(-4.5V), T
A
=70°C
I
D
@V
GS
=4.5V(-4.5V), T
C
=25°C
I
D
@V
GS
=4.5V(-4.5V), T
C
=100°C
R
DSON(typ)
@V
GS
=4.5V(-4.5V)
R
DSON(typ)
@V
GS
=2.5V(-2.5V)
N-CH
20V
12A
9.6A
28.7A
18.1A
10.5mΩ
13.1mΩ
P-CH
-20V
-8.9A
-7.1A
-21.6A
-13.7A
20.2mΩ
26.4mΩ
Equivalent Circuit
MTC7540DH8
Outline
DFN5×6
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
MTC7540DH8-0-T6-G
Package
DFN 5
×6
Shipping
3000 pcs / Tape & Reel
(Pb-free lead plating & halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTC7540DH8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Spec. No. : C995H8
Issued Date : 2015.07.23
Revised Date :
Page No. : 2/13
Limits
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
T
A
=25
°C,
V
GS
=4.5V (-4.5V)
Continuous Drain Current T
A
=70
°C,
V
GS
=4.5V (-4.5V)
T
C
=25
°C,
V
GS
=4.5V (-4.5V)
T
C
=100
°C,
V
GS
=4.5V (-4.5V)
Pulsed Drain Current (Note 1 & 2)
T
A
=25
°C
steady state
Power Dissipation
T
A
=70
°C
steady state
T
C
=25
°C
T
C
=100
°C
Operating Junction and Storage Temperature Range
Symbol
BV
DSS
V
GS
I
DSM
I
D
I
DM
P
DSM
P
D
Tj; Tstg
12
9.6
28.7
18.1
30
N-channel
10s
steady
20
±12
7.7
6.2
-8.9
-7.1
-21.6
-13.7
-30
1.4 (Note 3)
0.8 (Note 3)
23
9.2
-55~+150
°C
W
P-channel
10s
steady
-20
±12
-5.7
-4.6
A
Unit
V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
t≤10s
°C/W
R
θJA
Steady state
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
(Note 3)
Symbol
R
θJC
Value
5.5
35
85
Unit
N-Channel Electrical Characteristics
(Tc=25°C, unless otherwise specified)
Symbol
Min.
20
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
10.5
13.1
20
782
106
93
8.2
21.2
49.8
11.4
Max.
-
1.2
±100
1
5
14
17
-
-
-
-
-
-
-
-
Unit
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±12V, V
DS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V , Tj=55°C
I
D
=11.8A, V
GS
=4.5V
I
D
=9.8A, V
GS
=2.5V
V
DS
=5V, I
D
=11.8A
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*td
(ON)
*tr
*td
(OFF)
*tf
MTC7540DH8
pF
V
DS
=10V, V
GS
=0V, f=1MHz
ns
V
DS
=6V, I
D
=1A, V
GS
=4.5V, R
G
=6
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Body Diode
*I
S
-
-
-
-
12.2
1.3
4.6
-
-
-
-
2.9
12
1.2
-
-
nC
Spec. No. : C995H8
Issued Date : 2015.07.23
Revised Date :
Page No. : 3/13
V
DS
=6V, I
D
=11.8A, V
GS
=4.5V
*I
SM
*V
SD
-
-
-
0.79
7.6
2.8
A
V
t≤10s
V
GS=
0V, I
S
=2.9A
*trr
*Qrr
-
-
ns
nC
I
F
=2.9A dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
P-Channel Electrical Characteristics
(Tc=25°C, unless otherwise specified)
Symbol
Min.
-20
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
20.2
26.4
22
1532
157
140
13.2
20.2
133.4
64.4
25.7
4.5
9.2
-
Max.
-
-1.2
±100
-1
-5
27
35
-
-
-
-
-
-
-
-
-
-
-
-2.9
-12
-1.2
Unit
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
=VGS, I
D
=-250μA
V
GS
=±12V, V
DS
=0V
V
DS
=-20V, V
GS
=0V
V
DS
=-20V, V
GS
=0V, Tj=55°C
I
D
=-8.9A, V
GS
=-4.5V
I
D
=-6.9A, V
GS
=-2.5V
V
DS
=-5V, I
D
=-8.9A
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*td
(ON)
*tr
*td
(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*I
S
pF
V
DS
=-10V, V
GS
=0V, f=1MHz
ns
V
DS
=-6V, I
D
=-1A, V
GS
=-4.5V, R
G
=6
Ω
nC
V
DS
=-6V, I
D
=-8.9A, V
GS
=-4.5V
*I
SM
*V
SD
-
-
-
-0.63
38.6
15.8
A
V
t≤10s
V
GS
=0V, I
S
=-2.9A
*trr
*Qrr
-
-
-
-
ns
nC
I
F
=-2.9A dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTC7540DH8
CYStek Product Specification
CYStech Electronics Corp.
Recommended Soldering Footprint
Spec. No. : C995H8
Issued Date : 2015.07.23
Revised Date :
Page No. : 4/13
unit : mm
MTC7540DH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
30
5V, 4V,3.5V,3V,2.5V
Spec. No. : C995H8
Issued Date : 2015.07.23
Revised Date :
Page No. : 5/13
Brekdown Voltage vs Ambient Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
25
I
D
, Drain Current (A)
20
15
10
5
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
V
GS
=1.5V
2V
1.2
1
0.8
I
D
=250
μ
A,
V
GS
=0V
0.6
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=2.5V
V
GS
=3V
1
Tj=25°C
0.8
0.6
0.4
0.2
10
Tj=150°C
V
GS
=4.5V
V
GS
=10V
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
2.4
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
41
31
21
11
1
0
2
I
D
=11.8A
2
1.6
1.2
0.8
0.4
0
V
GS
=4.5V, I
D
=11.8A
R
DSON
@Tj=25°C : 10.5mΩ typ
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC7540DH8
CYStek Product Specification
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