CYStech Electronics Corp.
30V N-Channel Enhancement Mode MOSFET
Spec. No. : C122N3
Issued Date : 2015.07.22
Revised Date :
Page No. : 1/9
MTB55N03KN3
Features
•
Lower gate charge
•
ESD protected gate
•
Pb-free lead plating and Halogen-free package
BV
DSS
I
D
@
V
GS
=10V, T
A
=25°C
R
DSON(TYP)
@
V
GS
=10V, I
D
=4.2A
R
DSON(TYP)
@
V
GS
=4.5V, I
D
=2A
30V
4.8A
35mΩ
50mΩ
Equivalent Circuit
MTB55N03KN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTB55N03KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB55N03KN3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature
Power Dissipation
T
A
=25°C, V
GS
=10V
T
A
=70°C, V
GS
=10V
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Tj, Tstg
Spec. No. : C122N3
Issued Date : 2015.07.22
Revised Date :
Page No. : 2/9
Limits
30
±16
4.8
3.8
20
(Note 1 & 2)
1.38
(Note 3)
0.88
(Note 3)
-55 ~ +150
Unit
V
A
W
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient , max
Thermal Resistance, Junction to Case, max
Symbol
R
θJA
R
θJC
Value
90
*2
70
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle
≤
1%.
3. Surface mounted on 1 in² copper pad of FR4 board, t≤10s; 270°C/W when mounted on min. copper pad.
Electrical Characteristics
(T
A
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
1
*G
FS
1
Dynamic
Ciss
Coss
Crss
*t
d(ON)
1 2
*t
r
1 2
*t
d(OFF)
1 2
*t
f
1 2
MTB55N03KN3
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
35
50
5.5
171
59
35
3.6
16
11.4
4.4
Max.
-
2.5
±10
1
10
45
65
-
-
-
-
-
-
-
-
Unit
V
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±16V, V
DS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, Tj=55°C
I
D
=4.2A, V
GS
=10V
I
D
=2A, V
GS
=4.5V
V
DS
=5V, I
D
=3.5A
pF
V
DS
=10V, V
GS
=0V, f=1MHz
ns
V
DS
=15V, I
D
=4.2A,V
GS
=10V,
R
G
=3
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
1 2
*Qgs
1 2
*Qgd
1 2
Source-Drain Diode
I
S
I
SM
3
V
SD
1
trr
1
Qrr
1
1
2
3
Spec. No. : C122N3
Issued Date : 2015.07.22
Revised Date :
Page No. : 3/9
-
-
-
-
-
-
-
-
2.7
0.9
0.8
-
-
0.78
6.6
2
-
-
-
2
8
1
-
-
nC
V
DS
=15V, I
D
=4.2A, V
GS
=4.5V
A
V
ns
nC
I
S
=1A, V
GS
=0V
I
F
=4.2A, dI
F
/dt=100A/μs
Pulse test : Pulse width≤300μs, Duty cycle≤2%
Independent of operating temperature
Pulse width limited by maximum junction temperature
Recommended Soldering Footprint
MTB55N03KN3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
10V, 9V, 8V, 7V,
16
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
Spec. No. : C122N3
Issued Date : 2015.07.22
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
5V
I
D
, Drain Current(A)
1.2
12
4.5V
1
8
4V
3.5V
V
GS
=3V
0.8
I
D
=250
μ
A,
V
GS
=0V
0.6
-75
-50
-25
0
25
50
75
100 125 150 175
4
0
0
1
2
3
4
5
V
DS
, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
0.8
Tj=25°C
V
GS
=3V
100
V
GS
=4.5V
Tj=150°C
0.6
0.4
0.2
V
GS
=10V
10
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
400
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
350
300
250
200
150
100
50
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=4.2A
2
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
=10V, I
D
=4.2A
R
DS(ON)
@ Tj=25°C : 35 mΩ
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB55N03KN3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
1000
1.4
Spec. No. : C122N3
Issued Date : 2015.07.22
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
1.2
I
D
=1mA
100
C
oss
1
0.8
I
D
=250μA
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
100
0.6
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
G
FS
, Forward Transfer Admittance(S)
Pulsed
Ta=25°C
V
DS
=5V
1
V
GS
, Gate-Source Voltage(V)
8
6
0.1
4
V
DS
=15V
I
D
=4.8A
0
2
0.01
0.001
0.01
0.1
I
D
, Drain Current(A)
1
0
1
2
3
4
5
6
7
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
Maximum Drain Current vs JunctionTemperature
6
I
D
, Maximum Drain Current(A)
5
4
3
2
1
0
I
D
, Drain Current(A)
10
100
μ
s
1
1ms
10ms
100ms
0.1
T
A
=25°C, Tj=150°C,V
GS
=10V
R
θ
JA
=90°C/W, Single Pulse
0.01
0.01
0.1
1
10
DC
T
A
=25°C, V
GS
=10V
100
25
50
V
DS
, Drain-Source Voltage(V)
75
100
125
Tj, Junction Temperature(°C)
150
175
MTB55N03KN3
CYStek Product Specification
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