CYStech Electronics Corp.
N & P-Channel Enhancement Mode Power MOSFET
Spec. No. : C955J4
Issued Date : 2015.06.16
Revised Date :
Page No. : 1/13
MTB25C04J4
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
RoHS compliant & Halogen-free package
BV
DSS
I
D
@V
GS
=10V(-10V), T
A
=25°C
I
D
@V
GS
=10V(-10V), T
C
=25°C
R
DSON
(typ.) @V
GS
=(-)10V
R
DSON
(typ.) @V
GS
=(-)4.5V
N-CH
40V
5.2A
21A
20.9 mΩ
30.1 mΩ
P-CH
-40V
-4.9A
-20A
31.3 mΩ
46.2 mΩ
Equivalent Circuit
MTB25C04J4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
N-channel P-channel
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Continuous Drain Current @ T
C
=25°C, V
GS
=10V(-10V)
(Note1)
Continuous Drain Current @ T
C
=100°C, V
GS
=10V(-10V)
(Note1)
I
D
Continuous Drain Current @ T
A
=25°C, V
GS
=10V(-10V)
(Note4)
Continuous Drain Current @ T
A
=70°C, V
GS
=10V(-10V)
(Note4)
Pulsed Drain Current
*1
(Note3)
I
DM
Avalanche Current
I
AS
Avalanche Energy @ L=0.5mH, V
GS
=10V(-10V), I
AS
=6.5A(-9.3A)
E
AS
Total Power Dissipation (T
C
=25℃)
(Note1)
P
D
Total Power Dissipation (T
C
=100℃)
(Note1)
Total Power Dissipation (T
A
=25℃)
(Note2)
P
DSM
Total Power Dissipation (T
A
=70℃)
(Note2)
Operating Junction and Storage Temperature Range
Tj, Tstg
MTB25C04J4
40
±20
21
14.9
5.2
4.2
30
6.5
10.6
-40
±20
-20
-14.1
-4.9
-3.9
-30
-9.3
21.6
V
A
mJ
W
°C
25
12.5
2.4
1.7
-55~+175
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Spec. No. : C955J4
Issued Date : 2015.06.16
Revised Date :
Page No. : 2/13
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
R
th,j-c
6
Thermal Resistance, Junction-to-ambient, max
(Note2)
62.5
°C/W
R
th,j-a
Thermal Resistance, Junction-to-ambient, max
(Note4)
90
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4.
When mounted on the minimum pad size recommended (PCB mount), t≤10s.
N-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
G
FS
*1
Dynamic
Qg *1
Qgs *1
Qgd *1
t
d(ON)
*1
tr
*1
t
d(OFF)
*1
t
f
*1
Ciss
Coss
Crss
Source-Drain Diode
I
S
*1
I
SM
*2
V
SD
*1
trr *1
Qrr *1
Min.
40
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
20.9
30.1
7.7
11.2
2.3
2.1
7
17
23.8
6.6
604
56
45
-
-
0.74
5.9
2.4
Max.
-
2.5
±100
1
10
28
38
-
-
-
-
-
-
-
-
-
-
-
5
30
1
-
-
Unit
V
nA
μA
m
Ω
S
nC
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0V
V
DS
=32V, V
GS
=0V
V
DS
=30V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4A
V
DS
=5V, I
D
=5A
V
DS
=20V, I
D
=5A, V
GS
=10V
ns
V
DS
=20V, I
D
=1A, V
GS
=10V, R
G
=6
Ω
pF
V
DS
=15V, V
GS
=0V, f=1MHz
A
V
ns
nC
I
S
=1A, V
GS
=0V
I
F
=5A, V
GS
=0, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
MTB25C04J4
CYStek Product Specification
CYStech Electronics Corp.
P-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
G
FS
*1
Dynamic
Qg *1
Qgs *1
Qgd *1
t
d(ON)
*1
tr
*1
t
d(OFF)
*1
t
f
*1
Ciss
Coss
Crss
Source-Drain Diode
I
S
*1
I
SM
*2
V
SD
*1
trr *1
Qrr *1
Min.
-40
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
31.3
46.2
10
19.2
3.2
2.9
7
16.6
87
64.4
1053
98
74
-
-
-0.74
8.3
3.4
Max.
-
-2.5
±100
-1
-10
40
60
-
-
-
-
-
-
-
-
-
-
-
-4.9
-30
-1
-
-
Unit
V
nA
μA
m
Ω
S
nC
Test Conditions
Spec. No. : C955J4
Issued Date : 2015.06.16
Revised Date :
Page No. : 3/13
V
GS
=0V, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±20V, V
DS
=0V
V
DS
=-32V, V
GS
=0V
V
DS
=-30V, V
GS
=0V, Tj=55°C
V
GS
=-10V, I
D
=-4.9A
V
GS
=-4.5V, I
D
=-4A
V
DS
=-5V
,
I
D
=-4.9A
V
DS
=-20V, I
D
=-4.9A, V
GS
=-10V
ns
V
DS
=-20V, I
D
=-1A, V
GS
=-10V, R
G
=6
Ω
pF
V
DS
=-15V, V
GS
=0V, f=1MHz
A
V
ns
nC
I
S
=-1A, V
GS
=0V
I
F
=-5A, V
GS
=0, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB25C04J4-0-T3-G
Package
TO-252
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB25C04J4
CYStek Product Specification
CYStech Electronics Corp.
Q1, N-CH Typical Characteristics
Typical Output Characteristics
30
25
I
D
, Drain Current(A)
20
15
4V
Spec. No. : C955J4
Issued Date : 2015.06.16
Revised Date :
Page No. : 4/13
Brekdown Voltage vs Ambient Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
5V
10V, 9V, 8V, 7V, 6V
4.5V
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A,
V
GS
=0V
10
3.5V
5
0
0
1
V
GS
=2.5V
3V
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=3V
0.8
0.6
Tj=150°C
100
V
GS
=4.5V
0.4
0.2
V
GS
=10V
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
100
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.2
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
I
D
=5A
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
=10V, I
D
=5A
R
DS(ON)
@Tj=25°C : 20.9mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB25C04J4
CYStek Product Specification
CYStech Electronics Corp.
Q1, N-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
1
0.8
0.6
0.4
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
8
V
DS
=20V
I
D
=250μA
Spec. No. : C955J4
Issued Date : 2015.06.16
Revised Date :
Page No. : 5/13
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
1000
Ciss
I
D
=1mA
C
oss
100
Crss
10
100
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
G
FS
, Forward Transfer Admittance(S)
10
V
GS
, Gate-Source Voltage(V)
6
4
2
V
DS
=15V
V
DS
=25V
1
V
DS
=5V
Pulsed
Ta=25°C
0.1
I
D
=5A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Safe Operating Area
100
6
R
DS(ON)
Limit
Maximum Drain Current vs Junction Temperature
I
D
, Drain Current(A)
10
100
μ
s
1ms
10ms
100ms
I
D
, Maximum Drain Current(A)
5
4
3
2
1
0
T
A
=25°C, V
GS
=10V
R
θJA
=90°C/W
1
0.1
T
A
=25°C, Tj=175°C, V
GS
=10V
R
θJA
=90°C/W,Single Pulse
1s
DC
0.01
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
175
T
J
, Junction Temperature(°C)
MTB25C04J4
CYStek Product Specification
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